| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD23203WMOSFET P-CH 8V 3A 6DSBGA Texas Instruments |
2,215 | - |
|
数据表 |
NexFET™ | 6-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 1.8V, 4.5V | 19.4mOhm @ 1.5A, 4.5V | Surface Mount | 1.1V @ 250µA | 6.3 nC @ 4.5 V | 8 V | -6V | 914 pF @ 4 V | - | - | 6-DSBGA (1x1.5) | - | 750mW (Ta) | -55°C ~ 150°C (TJ) |
|
CSD25304W1015MOSFET P-CH 20V 3A 6DSBGA Texas Instruments |
2,757 | - |
|
数据表 |
NexFET™ | 6-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 1.8V, 4.5V | 32.5mOhm @ 1.5A, 4.5V | Surface Mount | 1.15V @ 250µA | 4.4 nC @ 4.5 V | 20 V | ±8V | 595 pF @ 10 V | - | - | 6-DSBGA (1x1.5) | - | 750mW (Ta) | -55°C ~ 150°C (TJ) |
|
CSD22204WMOSFET P-CH 8V 5A 9DSBGA Texas Instruments |
5,980 | - |
|
数据表 |
NexFET™ | 9-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 5A (Ta) | 2.5V, 4.5V | 9.9mOhm @ 2A, 4.5V | Surface Mount | 950mV @ 250µA | 24.6 nC @ 4.5 V | 8 V | -6V | 1130 pF @ 4 V | - | - | 9-DSBGA | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) |
|
CSD25302Q2MOSFET P-CH 20V 5A 6SON Texas Instruments |
9,560 | - |
|
数据表 |
NexFET™ | 6-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 1.8V, 4.5V | 49mOhm @ 3A, 4.5V | Surface Mount | 900mV @ 250µA | 3.4 nC @ 4.5 V | 20 V | ±8V | 350 pF @ 10 V | - | - | 6-SON | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) |
|
CSD25202W15MOSFET P-CH 20V 4A 9DSBGA Texas Instruments |
2,590 | - |
|
数据表 |
NexFET™ | 9-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 1.8V, 4.5V | 26mOhm @ 2A, 4.5V | Surface Mount | 1.05V @ 250µA | 7.5 nC @ 4.5 V | 20 V | -6V | 1010 pF @ 10 V | - | - | 9-DSBGA | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
CSD17381F4TMOSFET N-CH 30V 3.1A 3PICOSTAR Texas Instruments |
34,264 | - |
|
数据表 |
FemtoFET™ | 3-XFDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3.1A (Ta) | 1.8V, 4.5V | 109mOhm @ 500mA, 8V | Surface Mount | 1.1V @ 250µA | 1.35 nC @ 4.5 V | 30 V | 12V | 195 pF @ 15 V | - | - | 3-PICOSTAR | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
CSD17327Q5AMOSFET N-CH 30V 65A 8VSON Texas Instruments |
2,427 | - |
|
数据表 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 8V | 12.2mOhm @ 11A, 8V | Surface Mount | 2V @ 250µA | 3.4 nC @ 4.5 V | 30 V | ±10V | 506 pF @ 15 V | - | - | 8-VSONP (5x6) | - | 3W (Ta) | -55°C ~ 150°C (TJ) |
|
CSD18511KTTMOSFET N-CH 40V 194A DDPAK Texas Instruments |
174 | - |
|
数据表 |
NexFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 194A (Ta) | 4.5V, 10V | 2.6mOhm @ 100A, 10V | Surface Mount | 2.4V @ 250µA | 64 nC @ 10 V | 40 V | ±20V | 5940 pF @ 20 V | - | - | TO-263 (DDPAK-3) | - | 188W (Ta) | -55°C ~ 175°C (TJ) |
|
TPS1101DRMOSFET P-CH 15V 2.3A 8SOIC Texas Instruments |
3,284 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 2.3A (Ta) | 2.7V, 10V | 90mOhm @ 2.5A, 10V | Surface Mount | 1.5V @ 250µA | 11.25 nC @ 10 V | 15 V | +2V, -15V | - | - | - | 8-SOIC | - | 791mW (Ta) | -40°C ~ 150°C (TJ) |
|
CSD25301W1015MOSFET P-CH 20V 2.2A 6DSBGA Texas Instruments |
6,954 | - |
|
数据表 |
NexFET™ | 6-UFBGA, DSBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.2A (Tc) | 1.5V, 4.5V | 75mOhm @ 1A, 4.5V | Surface Mount | 1V @ 250µA | 2.5 nC @ 4.5 V | 20 V | ±8V | 270 pF @ 10 V | - | - | 6-DSBGA (1x1.5) | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |