订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD16414Q5MOSFET N-CH 25V 34A/100A 8VSON Texas Instruments |
2,582 | - |
|
数据表 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 34A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | Surface Mount | 2V @ 250µA | 21 nC @ 4.5 V | 25 V | +16V, -12V | 3650 pF @ 12.5 V | - | - | 8-VSON-CLIP (5x6) | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) |
|
TPS1101DMOSFET P-CH 15V 2.3A 8SOIC Texas Instruments |
69 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 2.3A (Ta) | 2.7V, 10V | 90mOhm @ 2.5A, 10V | Surface Mount | 1.5V @ 250µA | 11.25 nC @ 10 V | 15 V | +2V, -15V | - | - | - | 8-SOIC | - | 791mW (Ta) | -40°C ~ 150°C (TJ) |
|
CSD18542KTTTMOSFET N-CH 60V 200A/170A DDPAK Texas Instruments |
288 | - |
|
数据表 |
NexFET™ | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 170A (Tc) | 4.5V, 10V | 4mOhm @ 100A, 10V | Surface Mount | 2.2V @ 250µA | 57 nC @ 10 V | 60 V | ±20V | 5070 pF @ 30 V | - | - | TO-263 (DDPAK-3) | - | 250W (Ta) | -55°C ~ 175°C (TJ) |
|
|
CSD16401Q5TMOSFET N-CH 25V 100A 8VSON Texas Instruments |
520 | - |
|
数据表 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Ta) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | Surface Mount | 1.9V @ 250µA | 29 nC @ 4.5 V | 25 V | +16V, -12V | 4100 pF @ 12.5 V | - | - | 8-VSON-CLIP (5x6) | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) |
|
CSD13202Q2TPROTOTYPE Texas Instruments |
5,116 | - |
|
数据表 |
NexFET™ | 6-WDFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14.4A (Ta) | 2.5V, 4.5V | 9.3mOhm @ 5A, 4.5V | Surface Mount | 1.1V @ 250µA | 6.6 nC @ 4.5 V | 12 V | ±8V | 997 pF @ 6 V | - | - | 6-WSON (2x2) | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) |
|
|
CSD16342Q5ATPROTOTYPE Texas Instruments |
2,282 | - |
|
数据表 |
NexFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Ta), 100A (Tc) | 2.5V, 8V | 4.7mOhm @ 20A, 8V | Surface Mount | 1.1V @ 250µA | 7.1 nC @ 4.5 V | 25 V | +10V, -8V | 1350 pF @ 12.5 V | - | - | 8-VSON (5x6) | - | 3W (Ta) | -55°C ~ 150°C (TJ) |
|
|
CSD16323Q3TPROTOTYPE Texas Instruments |
2,063 | - |
|
数据表 |
NexFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Ta), 105A (Tc) | 3V, 8V | 4.5mOhm @ 24A, 8V | Surface Mount | 1.4V @ 250µA | 8.4 nC @ 4.5 V | 25 V | +10V, -8V | 1300 pF @ 12.5 V | - | - | 8-VSON-CLIP (3.3x3.3) | - | 2.8W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) |
|
|
XLMG3411R070RWHTPROTOTYPE Texas Instruments |
5,705 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
CSD17559Q5TMOSFET N-CH 30V 100A 8VSON Texas Instruments |
482 | - |
|
数据表 |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Ta) | 4.5V, 10V | 1.15mOhm @ 40A, 10V | Surface Mount | 1.7V @ 250µA | 51 nC @ 4.5 V | 30 V | ±20V | 9200 pF @ 15 V | - | - | 8-VSON-CLIP (5x6) | - | 3.2W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) |
|
CSD13303W1015MOSFET N-CH 12V 31A 6DSBGA Texas Instruments |
2,997 | - |
|
数据表 |
NexFET™ | 6-UFBGA, DSBGA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 2.5V, 4.5V | 20mOhm @ 1.5A, 4.5V | Surface Mount | 1.2V @ 250µA | 4.7 nC @ 4.5 V | 12 V | ±8V | 715 pF @ 6 V | - | - | 6-DSBGA (1x1.5) | - | 1.65W (Ta) | -55°C ~ 150°C (TJ) |
