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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM7NC60CF C0G

TSM7NC60CF C0G

MOSFET N-CH 600V 7A ITO220S

Taiwan Semiconductor Corporation

6,957 -
TSM7NC60CF C0G

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.2Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 24 nC @ 10 V 600 V ±30V 1169 pF @ 50 V - - ITO-220S - 44.6W (Tc) -55°C ~ 150°C (TJ)
TSM150P03PQ33

TSM150P03PQ33

-30, -36, SINGLE P-CHANNEL

Taiwan Semiconductor Corporation

9,974 -
TSM150P03PQ33

数据表

- 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10A (Ta), 36A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 29.3 nC @ 10 V 30 V ±20V 1829 pF @ 15 V - - 8-PDFN (3.1x3.1) - 2.3W (Ta), 27.8W (Tc) -55°C ~ 150°C (TJ)
TSM680P06CP

TSM680P06CP

-60V, -18A, SINGLE P-CHANNEL POW

Taiwan Semiconductor Corporation

4,254 -
TSM680P06CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V Surface Mount 2.2V @ 250µA 16.4 nC @ 10 V 60 V ±20V 870 pF @ 30 V - - TO-252 (DPAK) - 20W (Tc) -55°C ~ 150°C (TJ)
TSM480P06CP

TSM480P06CP

-60V, -20A, SINGLE P-CHANNEL POW

Taiwan Semiconductor Corporation

3,414 -
TSM480P06CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V Surface Mount 2.2V @ 250µA 22.4 nC @ 10 V 60 V ±20V 1250 pF @ 30 V - - TO-252 (DPAK) - - -50°C ~ 150°C (TJ)
TSM180N03PQ33 RGG

TSM180N03PQ33 RGG

MOSFET N-CH 30V 25A 8PDFN

Taiwan Semiconductor Corporation

9,890 -
TSM180N03PQ33 RGG

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 4.1 nC @ 4.5 V 30 V ±20V 345 pF @ 25 V - - 8-PDFN (3.1x3.08) - 21W (Tc) 150°C (TJ)
TSM600P03CS RLG

TSM600P03CS RLG

MOSFET P-CHANNEL 30V 4.7A 8SOP

Taiwan Semiconductor Corporation

1,355 -
TSM600P03CS RLG

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.7A (Tc) 4.5V, 10V 60mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 9.6 nC @ 4.5 V 30 V ±20V 560 pF @ 15 V - - 8-SOP - 2.1W (Tc) -55°C ~ 150°C (TJ)
TSM052NB03CR

TSM052NB03CR

30V, 90A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,020 -
TSM052NB03CR

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 90A (Tc) 4.5V, 10V 5.2mOhm @ 17A, 10V Surface Mount 2.5V @ 250µA 41 nC @ 10 V 30 V ±20V 2294 pF @ 15 V - - 8-PDFN (5x6) - 3.1W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
TSM4806CS RLG

TSM4806CS RLG

MOSFET N-CHANNEL 20V 28A 8SOP

Taiwan Semiconductor Corporation

3,666 -
TSM4806CS RLG

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta) 1.8V, 4.5V 20mOhm @ 20A, 4.5V Surface Mount 1V @ 250µA 12.3 nC @ 4.5 V 20 V ±8V 961 pF @ 15 V - - 8-SOP - 2W (Ta) -55°C ~ 150°C (TJ)
TSM2NB60CH C5G

TSM2NB60CH C5G

MOSFET N-CHANNEL 600V 2A TO251

Taiwan Semiconductor Corporation

15,000 -
TSM2NB60CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.4Ohm @ 1A, 10V Through Hole 4.5V @ 250µA 9.4 nC @ 10 V 600 V ±30V 249 pF @ 25 V - - TO-251 (IPAK) - 44W (Tc) -55°C ~ 150°C (TJ)
TSM1NB60CH C5G

TSM1NB60CH C5G

MOSFET N-CHANNEL 600V 1A TO251

Taiwan Semiconductor Corporation

14,962 -
TSM1NB60CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 10Ohm @ 500mA, 10V Through Hole 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - TO-251 (IPAK) - 39W (Tc) -55°C ~ 150°C (TJ)
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