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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM080N03PQ56

TSM080N03PQ56

30V, 73A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,503 -
TSM080N03PQ56

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 73A (Tc) 4.5V, 10V 8mOhm @ 14A, 10V Surface Mount 2.5V @ 250µA 14.4 nC @ 10 V 30 V ±20V 843 pF @ 15 V - - 8-PDFN (5x6) - 2.6W (Ta), 69W (Tc) -55°C ~ 150°C (TJ)
TSM1N45CT A3G

TSM1N45CT A3G

MOSFET N-CH 450V 500MA TO92

Taiwan Semiconductor Corporation

7,313 -
TSM1N45CT A3G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) 10V 4.25Ohm @ 250mA, 10V Through Hole 4.25V @ 250µA 6.5 nC @ 10 V 450 V ±30V 235 pF @ 25 V - - TO-92 - 2W (Tc) -55°C ~ 150°C (TJ)
TSM085N03PQ33

TSM085N03PQ33

30V, 52A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

2,838 -
TSM085N03PQ33

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 52A (Tc) 4.5V, 10V 8.5mOhm @ 13A, 10V Surface Mount 2.5V @ 250µA 14.3 nC @ 10 V 30 V ±20V 817 pF @ 15 V - - 8-PDFN (3.1x3.1) - 2.3W (Ta), 37W (Tc) -55°C ~ 150°C (TJ)
TSM080NB03CR

TSM080NB03CR

30V, 59A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

5,651 -
TSM080NB03CR

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 59A (Tc) 4.5V, 10V 8mOhm @ 14A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 30 V ±20V 1097 pF @ 15 V - - 8-PDFN (5x6) - 3.1W (Ta), 55.6W (Tc) -55°C ~ 175°C (TJ)
TSM150NB04LCV

TSM150NB04LCV

40V, 36A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,996 -
TSM150NB04LCV

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Ta), 36A (Tc) 4.5V, 10V 15mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 19 nC @ 10 V 40 V ±20V 1013 pF @ 20 V - - 8-PDFN (3.15x3.1) - 1.9W (Ta), 39W (Tc) -55°C ~ 150°C (TJ)
TSM085NB03CV

TSM085NB03CV

30V, 58A, SINGLE N-CHANNEL

Taiwan Semiconductor Corporation

8,128 -
TSM085NB03CV

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Ta), 58A (Tc) 4.5V, 10V 8.5mOhm @ 11A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 30 V ±20V 1101 pF @ 15 V - - 8-PDFN (3.15x3.1) - 1.92W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
TSM180P03CS

TSM180P03CS

-30V, -10A, SINGLE P-CHANNEL POW

Taiwan Semiconductor Corporation

8,650 -
TSM180P03CS

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 18mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 14.6 nC @ 4.5 V 30 V ±20V 1730 pF @ 15 V - - 8-SOP - 2.5W (Tc) 150°C (TJ)
TSM300NB06LCV

TSM300NB06LCV

60V, 24A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

8,869 -
TSM300NB06LCV

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta), 24A (Tc) 4.5V, 10V 30mOhm @ 5A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 10 V 60 V ±20V 962 pF @ 30 V - - 8-PDFN (3.15x3.1) - 1.9W (Ta), 39W (Tc) -55°C ~ 150°C (TJ)
TSM1NB60CW

TSM1NB60CW

600V, 1A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

6,742 -
TSM1NB60CW

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 10Ohm @ 500mA, 10V Surface Mount 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - SOT-223 - 2.1W (Tc) -55°C ~ 150°C (TJ)
TSM60NB099CF C0G

TSM60NB099CF C0G

MOSFET N-CH 600V 38A ITO220S

Taiwan Semiconductor Corporation

901 -
TSM60NB099CF C0G

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 99mOhm @ 5.3A, 10V Through Hole 4V @ 250µA 62 nC @ 10 V 600 V ±30V 2587 pF @ 100 V - - ITO-220S - 69W (Tc) -55°C ~ 150°C (TJ)
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