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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM80N08CZ C0G

TSM80N08CZ C0G

MOSFET N-CHANNEL 75V 80A TO220

Taiwan Semiconductor Corporation

8,153 -
TSM80N08CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 8mOhm @ 40A, 10V Through Hole 4V @ 250µA 91.5 nC @ 10 V 75 V ±20V 3905 pF @ 30 V - - TO-220 - 113.6W (Tc) -55°C ~ 150°C (TJ)
TSM043NB04LCZ C0G

TSM043NB04LCZ C0G

40V, 124A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

3,944 -
TSM043NB04LCZ C0G

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 124A (Tc) 4.5V, 10V 4.3mOhm @ 16A, 10V Through Hole 2.5V @ 250µA 76 nC @ 10 V 40 V ±20V 4387 pF @ 20 V - - TO-220 - 2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
TSM4ND60CI C0G

TSM4ND60CI C0G

MOSFET N-CH 600V 4A ITO220

Taiwan Semiconductor Corporation

9,965 -
TSM4ND60CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.2Ohm @ 1.4A, 10V Through Hole 3.8V @ 250µA 17.2 nC @ 10 V 600 V ±30V 582 pF @ 50 V - - ITO-220 - 41.6W (Tc) -55°C ~ 150°C (TJ)
TSM2NB60CP

TSM2NB60CP

600V, 2A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,869 -
TSM2NB60CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.4Ohm @ 1A, 10V Surface Mount 4.5V @ 250µA 9.4 nC @ 10 V 600 V ±30V 249 pF @ 25 V - - TO-252 (DPAK) - 44W (Tc) -55°C ~ 150°C (TJ)
TSM2NB60CH

TSM2NB60CH

600V, 2A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,099 -
TSM2NB60CH

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.4Ohm @ 1A, 10V Through Hole 4.5V @ 250µA 9.4 nC @ 10 V 600 V ±30V 249 pF @ 25 V - - TO-251 (IPAK) - 44W (Tc) -55°C ~ 150°C (TJ)
TSM9409CS

TSM9409CS

-60V, -3.5A, SINGLE P-CHANNEL PO

Taiwan Semiconductor Corporation

8,146 -
TSM9409CS

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4.5V, 10V 155mOhm @ 3.5A, 10V Surface Mount 1V @ 250µA 6 nC @ 10 V 60 V ±20V 540 pF @ 30 V - - 8-SOP - 3W (Ta) -55°C ~ 150°C (TJ)
TSM4435BCS RLG

TSM4435BCS RLG

MOSFET P-CHANNEL 30V 9.1A 8SOP

Taiwan Semiconductor Corporation

3,857 -
TSM4435BCS RLG

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9.1A (Ta) 4.5V, 10V 21mOhm @ 9.1A, 10V Surface Mount 3V @ 250µA 3.2 nC @ 10 V 30 V ±20V 1900 pF @ 15 V - - 8-SOP - 2.5W (Ta) -55°C ~ 150°C (TJ)
TSM230N06CP

TSM230N06CP

60V, 50A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,325 -
TSM230N06CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 28 nC @ 10 V 60 V ±20V 1680 pF @ 25 V - - TO-252 (DPAK) - 53W (Tc) 150°C (TJ)
TQM070NH04LCR RLG

TQM070NH04LCR RLG

40V, 54A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,000 -
TQM070NH04LCR RLG

数据表

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 54A (Tc) 4.5V, 10V 7mOhm @ 27A, 10V Surface Mount 2.2V @ 250µA 34.5 nC @ 10 V 40 V ±16V 2169 pF @ 25 V AEC-Q101 - 8-PDFN (5x6) Automotive 46.8W (Tc) -55°C ~ 175°C (TJ)
TQM070NH04CR RLG

TQM070NH04CR RLG

40V, 54A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,480 -
TQM070NH04CR RLG

数据表

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 54A (Tc) 7V, 10V 7mOhm @ 27A, 10V Surface Mount 3.6V @ 250µA 28.5 nC @ 10 V 40 V ±20V 2006 pF @ 25 V AEC-Q101 - 8-PDFN (5x6) Automotive 46.8W (Tc) -55°C ~ 175°C (TJ)
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