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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIR5211DP-T1-GE3 P-CHANNEL 20 V (D-S) MOSFET POWE Vishay Siliconix	5,995	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	31.2A (Ta), 105A (Tc)	2.5V, 10V	3.2mOhm @ 10A, 10V	Surface Mount	1.5V @ 250µA	158 nC @ 10 V	20 V	±12V	6700 pF @ 10 V	-	-	PowerPAK® SO-8	-	5W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)
SIJA72ADP-T1-GE3 MOSFET N-CH 40V 27.9A/96A PPAK Vishay Siliconix	5,528	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	27.9A (Ta), 96A (Tc)	4.5V, 10V	3.42mOhm @ 10A, 10V	Surface Mount	2.4V @ 250µA	50 nC @ 10 V	40 V	+20V, -16V	2530 pF @ 20 V	-	-	PowerPAK® SO-8	-	4.8W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)
DI110N04PQ-AQ MOSFET, POWERQFN 5X6, 40V, 110A, Diotec Semiconductor	4,787	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	110A (Tc)	4.5V, 10V	2.5mOhm @ 23A, 10V	Surface Mount	2.5V @ 250µA	48 nC @ 10 V	40 V	±20V	2980 pF @ 25 V	AEC-Q101	-	8-QFN (5x6)	Automotive	45W (Tc)	-55°C ~ 150°C (TJ)
PSMN2R5-40YLBX PSMN2R5-40YLB/SOT669/LFPAK Nexperia USA Inc.	1,500	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	4.5V, 10V	2.6mOhm @ 25A, 10V	Surface Mount	2.05V @ 1mA	79 nC @ 10 V	40 V	±20V	5627 pF @ 20 V	-	Schottky Diode (Body)	LFPAK56, Power-SO8	-	147W (Tc)	-55°C ~ 175°C (TJ)
PSMN2R8-40YSBX PSMN2R8-40YSB/SOT669/LFPAK Nexperia USA Inc.	1,500	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	10V	2.8mOhm @ 25A, 10V	Surface Mount	3.6V @ 1mA	59 nC @ 10 V	40 V	±20V	4563 pF @ 20 V	-	Schottky Diode (Body)	LFPAK56, Power-SO8	-	147W (Tc)	-55°C ~ 175°C (TJ)
SIR846ADP-T1-RE3 MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix	8,526	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	6V, 10V	7.8mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	66 nC @ 10 V	100 V	±20V	2350 pF @ 50 V	-	-	PowerPAK® SO-8	-	83W (Tc)	-55°C ~ 150°C (TJ)
TSM60N1R4CH C5G MOSFET N-CH 600V 3.3A TO251 Taiwan Semiconductor Corporation	9,265	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.3A (Tc)	10V	1.4Ohm @ 2A, 10V	Through Hole	4V @ 250µA	7.7 nC @ 10 V	600 V	±30V	370 pF @ 100 V	-	-	TO-251 (IPAK)	-	38W (Tc)	-55°C ~ 150°C (TJ)
AOB470L MOSFET N-CH 75V 10A/100A TO263 Alpha & Omega Semiconductor Inc.	2,746	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	10A (Ta), 100A (Tc)	10V	10.2mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	136 nC @ 10 V	75 V	±25V	5640 pF @ 30 V	-	-	TO-263 (D2PAK)	-	2.1W (Ta), 268W (Tc)	-55°C ~ 175°C (TJ)
AONS30306 LINEAR IC Alpha & Omega Semiconductor Inc.	7,934	-	询价单	数据表	-	8-PowerSMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	62A (Ta), 302A (Tc)	4.5V, 10V	1.1mOhm @ 20A, 10V	Surface Mount	1.7V @ 250µA	110 nC @ 10 V	30 V	±20V	5580 pF @ 15 V	-	-	8-DFN (5x6)	-	7.5W (Ta), 176W (Tc)	-55°C ~ 175°C (TJ)
IRFZ34NLPBF MOSFET N-CH 55V 29A TO262 Infineon Technologies	5,433	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	40mOhm @ 16A, 10V	Through Hole	4V @ 250µA	34 nC @ 10 V	55 V	±20V	700 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)
STL25N15F4 MOSFET N-CH 150V 25A POWERFLAT STMicroelectronics	9,366	-	询价单	数据表	DeepGATE™, STripFET™	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	63mOhm @ 3A, 10V	Surface Mount	4V @ 250µA	48 nC @ 10 V	150 V	±20V	2710 pF @ 25 V	-	-	PowerFlat™ (5x6)	-	80W (Tc)	-55°C ~ 150°C (TJ)
NVMFS6B25NLWFT1G MOSFET N-CH 100V 8A/33A 5DFN onsemi	4,530	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Ta), 33A (Ta)	4.5V, 10V	24mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	13.5 nC @ 10 V	100 V	±16V	905 pF @ 25 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.6W (Ta), 62W (Tc)	-55°C ~ 175°C (TJ)
RFP15P05 MOSFET P-CH 50V 15A TO220-3 onsemi	8,553	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	150mOhm @ 15A, 10V	Through Hole	4V @ 250µA	150 nC @ 20 V	50 V	±20V	1150 pF @ 25 V	-	-	TO-220-3	-	80W (Tc)	-55°C ~ 175°C (TJ)
IPP057N06N3GHKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	3,174	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.7mOhm @ 80A, 10V	Through Hole	4V @ 58µA	82 nC @ 10 V	60 V	±20V	6600 pF @ 30 V	-	-	PG-TO220-3	-	115W (Tc)	-55°C ~ 175°C (TJ)
IPP052N06L3GHKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	4,212	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	5mOhm @ 80A, 10V	Through Hole	2.2V @ 58µA	50 nC @ 4.5 V	60 V	±20V	8400 pF @ 30 V	-	-	PG-TO220-3	-	115W (Tc)	-55°C ~ 175°C (TJ)
BUK7E3R1-40E,127 MOSFET N-CH 40V 100A I2PAK Nexperia USA Inc.	9,540	-	询价单	数据表	TrenchMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.1mOhm @ 25A, 10V	Through Hole	4V @ 1mA	79 nC @ 10 V	40 V	±20V	6200 pF @ 25 V	AEC-Q101	-	I2PAK	Automotive	234W (Tc)	-55°C ~ 175°C (TJ)
IRFZ14STRLPBF MOSFET N-CH 60V 10A D2PAK Vishay Siliconix	9,064	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	200mOhm @ 6A, 10V	Surface Mount	4V @ 250µA	11 nC @ 10 V	60 V	±20V	300 pF @ 25 V	-	-	D2PAK	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
IRF7465 MOSFET N-CH 150V 1.9A 8SO Infineon Technologies	6,699	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.9A (Ta)	10V	280mOhm @ 1.14A, 10V	Surface Mount	5.5V @ 250µA	15 nC @ 10 V	150 V	±30V	330 pF @ 25 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IXTU12N06T MOSFET N-CH 60V 12A TO251 IXYS	4,302	-	询价单	数据表	Trench	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	85mOhm @ 6A, 10V	Through Hole	4V @ 25µA	3.4 nC @ 10 V	60 V	±20V	256 pF @ 25 V	-	-	TO-251AA	-	33W (Tc)	-55°C ~ 175°C (TJ)
MCP130N10YA-BP MOSFET N-CHANNEL MOSFET Micro Commercial Co	7,417	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	130A (Tc)	10V	5.5mOhm @ 65A, 10V	Through Hole	4V @ 250µA	62 nC @ 10 V	100 V	±20V	4500 pF @ 50 V	-	-	TO-220AB (H)	-	310W	-55°C ~ 150°C (TJ)

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