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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STB12N60DM2AG

STB12N60DM2AG

DISCRETE

STMicroelectronics

9,690 -
STB12N60DM2AG

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 430mOhm @ 5A, 10V Surface Mount 5V @ 250µA 14.5 nC @ 10 V 600 V ±25V 614 pF @ 100 V AEC-Q101 - TO-263 (D2PAK) Automotive 125W -55°C ~ 150°C (TJ)
STP8NM60ND

STP8NM60ND

MOSFET N-CH 600V 7A TO220-3

STMicroelectronics

2,786 -
STP8NM60ND

数据表

FDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 700mOhm @ 3.5A, 10V Through Hole 5V @ 250µA 22 nC @ 10 V 600 V ±30V 560 pF @ 50 V - - TO-220 - 70W (Tc) 150°C (TJ)
STS15N4LLF3

STS15N4LLF3

MOSFET N-CH 40V 15A 8SO

STMicroelectronics

7,951 -
STS15N4LLF3

数据表

STripFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 5mOhm @ 7.5A, 10V Surface Mount 1V @ 250µA 28 nC @ 4.5 V 40 V ±16V 2530 pF @ 25 V - - 8-SOIC - 2.7W (Tc) -55°C ~ 150°C (TJ)
STN1NF10

STN1NF10

MOSFET N-CH 100V 1A SOT-223

STMicroelectronics

6,846 -
STN1NF10

数据表

STripFET™ II TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 800mOhm @ 500mA, 10V Surface Mount 4V @ 250µA 6 nC @ 10 V 100 V ±20V 105 pF @ 25 V - - SOT-223 - 2.5W (Tc) -55°C ~ 150°C (TJ)
STD150NH02L-1

STD150NH02L-1

MOSFET N-CH 24V 150A IPAK

STMicroelectronics

6,043 -
STD150NH02L-1

数据表

STripFET™ III TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150A (Tc) 5V, 10V 3.5mOhm @ 75A, 10V Through Hole 1.8V @ 250µA 93 nC @ 10 V 24 V ±20V 4450 pF @ 15 V - - IPAK - 125W (Tc) -55°C ~ 175°C (TJ)
STD6NM60N-1

STD6NM60N-1

MOSFET N-CH 600V 4.6A IPAK

STMicroelectronics

4,571 -
STD6NM60N-1

数据表

MDmesh™ II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.6A (Tc) 10V 920mOhm @ 2.3A, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 600 V ±25V 420 pF @ 50 V - - TO-251 (IPAK) - 45W (Tc) -55°C ~ 150°C (TJ)
STP4NB100

STP4NB100

MOSFET N-CH 1000V 3.8A TO220AB

STMicroelectronics

4,548 -
STP4NB100

数据表

PowerMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 10V 4.4Ohm @ 2A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 1000 V ±30V 1400 pF @ 25 V - - TO-220 - 125W (Tc) 150°C (TJ)
STP9N80K5

STP9N80K5

MOSFET N-CHANNEL 800V 7A TO220

STMicroelectronics

6,570 -
STP9N80K5

数据表

MDmesh™ K5 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 900mOhm @ 3.5A, 10V Through Hole 5V @ 100µA 12 nC @ 10 V 800 V ±30V 340 pF @ 100 V - - TO-220 - 110W (Tc) -55°C ~ 150°C (TJ)
STL9N3LLH5

STL9N3LLH5

MOSFET N-CH 30V 9A POWERFLAT

STMicroelectronics

8,463 -
STL9N3LLH5

数据表

STripFET™ V 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 4.5V, 10V 19mOhm @ 4.5A, 10V Surface Mount 2.5V @ 250µA 5 nC @ 4.5 V 30 V ±22V 724 pF @ 25 V - - PowerFlat™ (3.3x3.3) - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
STL6NM60N

STL6NM60N

MOSFET N-CH 600V 5.75A POWERFLAT

STMicroelectronics

9,939 -
STL6NM60N

数据表

MDmesh™ II 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.75A (Tc) 10V 920mOhm @ 2.3A, 10V Surface Mount 4V @ 250µA 13 nC @ 10 V 600 V ±25V 420 pF @ 50 V - - PowerFLAT™ (5x5) - 70W (Tc) -55°C ~ 150°C (TJ)
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