富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STI18N65M2

STI18N65M2

MOSFET N-CH 650V 12A I2PAK

STMicroelectronics

5,533 -
STI18N65M2

数据表

MDmesh™ M2 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 330mOhm @ 6A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 650 V ±25V 770 pF @ 100 V - - I2PAK - 110W (Tc) 150°C (TJ)
STQ2NK60ZR-AP

STQ2NK60ZR-AP

MOSFET N-CH 600V 400MA TO92-3

STMicroelectronics

5,161 -
STQ2NK60ZR-AP

数据表

SuperMESH™ TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 400mA (Tc) 10V 8Ohm @ 700mA, 10V Through Hole 4.5V @ 50µA 10 nC @ 10 V 600 V ±30V 170 pF @ 25 V - - TO-92-3 - 3W (Tc) -55°C ~ 150°C (TJ)
STWA60N043DM9

STWA60N043DM9

N-CHANNEL 600 V, 38 MOHM TYP., 5

STMicroelectronics

144 -
STWA60N043DM9

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 43mOhm @ 28A, 10V Through Hole 4.5V @ 250µA 78.6 nC @ 10 V 600 V ±30V 4675 pF @ 400 V - - TO-247 Long Leads - 312W (Tc) -55°C ~ 150°C (TJ)
STW69N65M5

STW69N65M5

MOSFET N-CH 650V 58A TO247

STMicroelectronics

477 -
STW69N65M5

数据表

MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 10V 45mOhm @ 29A, 10V Through Hole 5V @ 250µA 143 nC @ 10 V 650 V ±25V 6420 pF @ 100 V - - TO-247-3 - 330W (Tc) 150°C (TJ)
STF9NM50N

STF9NM50N

MOSFET N-CH 500V 5A TO220FP

STMicroelectronics

6,797 -
STF9NM50N

数据表

MDmesh™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 560mOhm @ 3.7A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 500 V ±25V 570 pF @ 50 V - - TO-220FP - 25W (Tc) 150°C (TJ)
STL57N65M5

STL57N65M5

MOSFET N-CH 650V 4.3A 8POWERFLAT

STMicroelectronics

5,445 -
STL57N65M5

数据表

MDmesh™ V 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.3A (Ta), 22.5A (Tc) 10V 69mOhm @ 20A, 10V Surface Mount 5V @ 250µA 110 nC @ 10 V 650 V ±25V 4200 pF @ 100 V - - PowerFlat™ (8x8) HV - 2.8W (Ta), 189W (Tc) 150°C (TJ)
STL19N60M2

STL19N60M2

MOSFET N-CH 600V 11A PWRFLAT HV

STMicroelectronics

4,393 -
STL19N60M2

数据表

MDmesh™ M2 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V - Surface Mount 4V @ 250µA 21.5 nC @ 10 V 600 V ±25V 791 pF @ 100 V - - PowerFlat™ (8x8) HV - 90W (Tc) -55°C ~ 150°C (TJ)
SCTWA35N65G2V-4

SCTWA35N65G2V-4

DISCRETE

STMicroelectronics

600 -
SCTWA35N65G2V-4

数据表

- TO-247-4 Bulk Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 18V, 20V 67mOhm @ 20A, 20V Through Hole 5V @ 1mA 73 nC @ 20 V 650 V +18V, -5V 1370 pF @ 400 V - - TO-247-4 - 240W (Tc) -55°C ~ 200°C (TJ)
STP18N60M6

STP18N60M6

MOSFET N-CH 600V 13A TO220

STMicroelectronics

3,207 -
STP18N60M6

数据表

MDmesh™ M6 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 280mOhm @ 6.5A, 10V Through Hole 4.75V @ 250µA 16.8 nC @ 10 V 600 V ±25V 650 pF @ 100 V - - TO-220 - 110W (Tc) -55°C ~ 150°C (TJ)
STP4NB80

STP4NB80

MOSFET N-CH 800V 4A TO220AB

STMicroelectronics

8,744 -
STP4NB80

数据表

PowerMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3.3Ohm @ 2A, 10V Through Hole 5V @ 250µA 29 nC @ 10 V 800 V ±30V 920 pF @ 25 V - - TO-220 - 100W (Tc) 150°C (TJ)
共 2092 条记录«上一页1... 4344454647484950...210下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户