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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STF40NF06MOSFET N-CH 60V 23A TO220FP STMicroelectronics |
3,302 | - |
|
数据表 |
STripFET™ II | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 10V | 28mOhm @ 11.5A, 10V | Through Hole | 4V @ 250µA | 32 nC @ 10 V | 60 V | ±20V | 920 pF @ 25 V | - | - | TO-220FP | - | 30W (Tc) | -55°C ~ 175°C (TJ) |
|
SCTWA50N120SICFET N-CH 1200V 65A HIP247 STMicroelectronics |
378 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 65A (Tc) | 20V | 69mOhm @ 40A, 20V | Through Hole | 3V @ 1mA | 122 nC @ 20 V | 1200 V | +25V, -10V | 1900 pF @ 400 V | - | - | HiP247™ | - | 318W (Tc) | -55°C ~ 200°C (TJ) |
|
STY100NM60NMOSFET N CH 600V 98A MAX247 STMicroelectronics |
600 | - |
|
数据表 |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 98A (Tc) | 10V | 29mOhm @ 49A, 10V | Through Hole | 4V @ 250µA | 330 nC @ 10 V | 600 V | 25V | 9600 pF @ 50 V | - | - | MAX247™ | - | 625W (Tc) | -55°C ~ 150°C (TJ) |
|
STD5N65M6MOSFET N-CH 650V DPAK STMicroelectronics |
2,002 | - |
|
数据表 |
MDmesh™ M6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 0V, 10V | 1.3Ohm @ 2A, 10V | Surface Mount | 3.75V @ 250µA | 5.1 nC @ 10 V | 650 V | ±25V | 170 pF @ 100 V | - | - | DPAK | - | 45W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STU5N65M6MOSFET N-CH 650V 4A IPAK STMicroelectronics |
8,501 | - |
|
数据表 |
MDmesh™ M6 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 1.3Ohm @ 2A, 10V | Through Hole | 3.75V @ 250µA | 5.1 nC @ 10 V | 650 V | ±25V | 170 pF @ 100 V | - | - | TO-251 (IPAK) | - | 45W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STY60NM50MOSFET N-CH 500V 60A MAX247 STMicroelectronics |
584 | - |
|
数据表 |
MDmesh™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | Through Hole | 5V @ 250µA | 266 nC @ 10 V | 500 V | ±30V | 7500 pF @ 25 V | - | - | MAX247™ | - | 560W (Tc) | 150°C (TJ) |
|
|
STY112N65M5MOSFET N-CH 650V 96A MAX247 STMicroelectronics |
543 | - |
|
数据表 |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 96A (Tc) | 10V | 22mOhm @ 47A, 10V | Through Hole | 5V @ 250µA | 350 nC @ 10 V | 650 V | ±25V | 16870 pF @ 100 V | - | - | MAX247™ | - | 625W (Tc) | 150°C (TJ) |
|
STD7NM50N-1MOSFET N-CH 500V 5A IPAK STMicroelectronics |
6,376 | - |
|
数据表 |
MDmesh™ II | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 780mOhm @ 2.5A, 10V | Through Hole | 4V @ 250µA | 12 nC @ 10 V | 500 V | ±25V | 400 pF @ 50 V | - | - | IPAK | - | 45W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STU16N60M2MOSFET N-CH 600V 12A IPAK STMicroelectronics |
7,332 | - |
|
数据表 |
MDmesh™ M2 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | Through Hole | 4V @ 250µA | 19 nC @ 10 V | 600 V | ±25V | 700 pF @ 100 V | - | - | TO-251 (IPAK) | - | 110W (Tc) | 150°C (TJ) |
|
IRF640MOSFET N-CH 200V 18A TO220AB STMicroelectronics |
4,287 | - |
|
数据表 |
MESH OVERLAY™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 180mOhm @ 9A, 10V | Through Hole | 4V @ 250µA | 72 nC @ 10 V | 200 V | ±20V | 1560 pF @ 25 V | - | - | TO-220 | - | 125W (Tc) | 150°C (TJ) |
