富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STP5NK65ZFP

STP5NK65ZFP

MOSFET N-CH 650V 4.5A TO220FP

STMicroelectronics

5,565 -
STP5NK65ZFP

数据表

SuperMESH™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.8Ohm @ 2.1A, 10V Through Hole 4.5V @ 50µA 35 nC @ 10 V 650 V ±30V 680 pF @ 25 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
STD30NE06LT4

STD30NE06LT4

MOSFET N-CH 60V 30A DPAK

STMicroelectronics

2,108 -
STD30NE06LT4

数据表

STripFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 5V, 10V 28mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 41 nC @ 5 V 60 V ±20V 2370 pF @ 25 V - - DPAK - 55W (Tc) 175°C (TJ)
STU7N65M6

STU7N65M6

MOSFET N-CH 650V 5A IPAK

STMicroelectronics

8,761 -
STU7N65M6

数据表

MDmesh™ M6 TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 990mOhm @ 2.5A, 10V Through Hole 3.75V @ 250µA 6.9 nC @ 10 V 650 V ±25V 220 pF @ 100 V - - IPAK - 60W (Tc) -55°C ~ 150°C (TJ)
STB5N62K3

STB5N62K3

MOSFET N-CH 620V 4.2A D2PAK

STMicroelectronics

3,498 -
STB5N62K3

数据表

SuperMESH3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.2A (Tc) 10V 1.6Ohm @ 2.1A, 10V Surface Mount 4.5V @ 50µA 26 nC @ 10 V 620 V ±30V 680 pF @ 50 V - - TO-263 (D2PAK) - 70W (Tc) -55°C ~ 150°C (TJ)
STB6N62K3

STB6N62K3

MOSFET N-CH 620V 5.5A D2PAK

STMicroelectronics

9,142 -
STB6N62K3

数据表

SuperMESH3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1.2Ohm @ 2.8A, 10V Surface Mount 4.5V @ 50µA 34 nC @ 10 V 620 V ±30V 875 pF @ 50 V - - TO-263 (D2PAK) - 90W (Tc) 150°C (TJ)
STP5NB60

STP5NB60

MOSFET N-CH 600V 5A TO220AB

STMicroelectronics

4,111 -
STP5NB60

数据表

PowerMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 2Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 30 nC @ 10 V 600 V ±30V 884 pF @ 25 V - - TO-220 - 100W (Tc) 150°C (TJ)
STP10NK50Z

STP10NK50Z

MOSFET N-CH 500V 9A TO220AB

STMicroelectronics

8,784 -
STP10NK50Z

数据表

SuperMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 700mOhm @ 4.5A, 10V Through Hole 4.5V @ 100µA 39.2 nC @ 10 V 500 V ±30V 1219 pF @ 25 V - - TO-220 - 125W (Tc) -55°C ~ 150°C (TJ)
STD5NK52ZD-1

STD5NK52ZD-1

MOSFET N-CH 520V 4.4A I-PAK

STMicroelectronics

5,122 -
STD5NK52ZD-1

数据表

SuperMESH™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V Through Hole 4.5V @ 50µA 16.9 nC @ 10 V 520 V ±30V 529 pF @ 25 V - - IPAK - 70W (Tc) -55°C ~ 150°C (TJ)
STK184N4F7AG

STK184N4F7AG

DISCRETE

STMicroelectronics

9,105 -
STK184N4F7AG

数据表

STripFET™ F7 SC-100, SOT-669 Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2mOhm @ 50A, 10V Surface Mount 4V @ 250µA 35 nC @ 10 V 40 V ±20V 2750 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 136W (Tc) -55°C ~ 175°C (TJ)
STD9N60M6

STD9N60M6

DISCRETE

STMicroelectronics

7,786 -
STD9N60M6

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 750mOhm @ 3A, 10V Surface Mount 4.75V @ 250µA 10 nC @ 10 V 600 V ±25V 273 pF @ 100 V - - TO-252 (DPAK) - 76W (Tc) -55°C ~ 150°C (TJ)
共 2092 条记录«上一页1... 2324252627282930...210下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户