富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STP14NF12

STP14NF12

MOSFET N-CH 120V 14A TO220-3

STMicroelectronics

8,418 -
STP14NF12

数据表

STripFET™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 180mOhm @ 7A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 120 V ±20V 460 pF @ 25 V - - TO-220 - 60W (Tc) -55°C ~ 175°C (TJ)
STO68N65DM6

STO68N65DM6

N-CHANNEL 650 V, 53 MOHM TYP., 5

STMicroelectronics

187 -
STO68N65DM6

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 65mOhm @ 27.5A, 10V Surface Mount 4.75V @ 250µA 80 nC @ 10 V 650 V ±25V 3528 pF @ 100 V - - TOLL (HV) - 240W (Tc) -55°C ~ 150°C (TJ)
STW69N65M5-4

STW69N65M5-4

MOSFET N-CH 650V 58A TO247-4L

STMicroelectronics

385 -
STW69N65M5-4

数据表

MDmesh™ V TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 10V 45mOhm @ 29A, 10V Through Hole 5V @ 250µA 143 nC @ 10 V 650 V ±25V 6420 pF @ 100 V - - TO-247-4L - 330W (Tc) 150°C (TJ)
STB32N65M5

STB32N65M5

MOSFET N-CH 650V 24A D2PAK

STMicroelectronics

940 -
STB32N65M5

数据表

MDmesh™ V TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 119mOhm @ 12A, 10V Surface Mount 5V @ 250µA 72 nC @ 10 V 650 V ±25V 3320 pF @ 100 V - - D2PAK - 150W (Tc) 150°C (TJ)
STB34NM60N

STB34NM60N

MOSFET N-CH 600V 29A D2PAK

STMicroelectronics

500 -
STB34NM60N

数据表

MDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 105mOhm @ 14.5A, 10V Surface Mount 4V @ 250µA 84 nC @ 10 V 600 V ±25V 2722 pF @ 100 V - - TO-263 (D2PAK) - 250W (Tc) 150°C (TJ)
STWA88N65M5

STWA88N65M5

MOSFET N-CH 650V 84A TO247

STMicroelectronics

593 -
STWA88N65M5

数据表

MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 84A (Tc) 10V 29mOhm @ 42A, 10V Through Hole 5V @ 250µA 204 nC @ 10 V 650 V ±25V 8825 pF @ 100 V - - TO-247-3 - 450W (Tc) 150°C (TJ)
STW34NM60ND

STW34NM60ND

MOSFET N-CH 600V 29A TO247

STMicroelectronics

588 -
STW34NM60ND

数据表

FDmesh™ II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 110mOhm @ 14.5A, 10V Through Hole 5V @ 250µA 80.4 nC @ 10 V 600 V ±25V 2785 pF @ 50 V - - TO-247-3 - 190W (Tc) 150°C (TJ)
STW65N80K5

STW65N80K5

MOSFET N-CH 800V 46A TO247

STMicroelectronics

439 -
STW65N80K5

数据表

MDmesh™ K5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 46A (Tc) 10V 80mOhm @ 23A, 10V Through Hole 5V @ 100µA 92 nC @ 10 V 800 V ±30V 3230 pF @ 100 V - - TO-247-3 - 446W (Tc) -55°C ~ 150°C (TJ)
STU13N65M2

STU13N65M2

MOSFET N-CH 650V 10A IPAK

STMicroelectronics

5,692 -
STU13N65M2

数据表

MDmesh™ M2 TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 430mOhm @ 5A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 650 V ±25V 590 pF @ 100 V - - TO-251 (IPAK) - 110W (Tc) 150°C (TJ)
STD70N03L-1

STD70N03L-1

MOSFET N-CH 30V 70A IPAK

STMicroelectronics

6,484 -
STD70N03L-1

数据表

STripFET™ III TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 5V, 10V 7.3mOhm @ 35A, 10V Through Hole 1V @ 250µA 21 nC @ 5 V 30 V ±20V 2200 pF @ 25 V - - IPAK - 70W (Tc) -55°C ~ 175°C (TJ)
共 2092 条记录«上一页1... 1718192021222324...210下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户