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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STP36N60M6

STP36N60M6

MOSFET N-CHANNEL 600V 30A TO220

STMicroelectronics

68 -
STP36N60M6

数据表

MDmesh™ M6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 99mOhm @ 15A, 10V Through Hole 4.75V @ 250µA 44.3 nC @ 10 V 600 V ±25V 1960 pF @ 100 V - - TO-220 - 208W (Tc) -55°C ~ 150°C (TJ)
STH240N75F3-2

STH240N75F3-2

MOSFET N CH 75V 180A H2PAK-2

STMicroelectronics

89 -
STH240N75F3-2

数据表

STripFET™ III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 3mOhm @ 90A, 10V Surface Mount 4V @ 250µA 87 nC @ 10 V 75 V ±20V 6800 pF @ 25 V - - H2PAK-2 - 300W (Tc) -55°C ~ 175°C (TJ)
STP28NM60ND

STP28NM60ND

MOSFET N-CH 600V 23A TO220

STMicroelectronics

123 -
STP28NM60ND

数据表

FDmesh™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 23A (Tc) 10V 150mOhm @ 11.5A, 10V Through Hole 5V @ 250µA 62.5 nC @ 10 V 600 V ±25V 2090 pF @ 100 V - - TO-220 - 190W (Tc) 150°C (TJ)
STB80NF55-06-1

STB80NF55-06-1

MOSFET N-CH 55V 80A I2PAK

STMicroelectronics

3,634 -
STB80NF55-06-1

数据表

STripFET™ II TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 6.5mOhm @ 40A, 10V Through Hole 4V @ 250µA 189 nC @ 10 V 55 V ±20V 4400 pF @ 25 V - - I2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
STD4NK50Z-1

STD4NK50Z-1

MOSFET N-CH 500V 3A IPAK

STMicroelectronics

2,214 -
STD4NK50Z-1

数据表

SuperMESH™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 2.7Ohm @ 1.5A, 10V Through Hole 4.5V @ 50µA 12 nC @ 10 V 500 V ±30V 310 pF @ 25 V - - IPAK - 45W (Tc) -55°C ~ 150°C (TJ)
STB14NK50Z-1

STB14NK50Z-1

MOSFET N-CH 500V 14A I2PAK

STMicroelectronics

6,170 -
STB14NK50Z-1

数据表

SuperMESH™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 380mOhm @ 6A, 10V Through Hole 4.5V @ 100µA 92 nC @ 10 V 500 V ±30V 2000 pF @ 25 V - - I2PAK - 150W (Tc) -55°C ~ 150°C (TJ)
STFI24N60M2

STFI24N60M2

MOSFET N CH 600V 18A TO281

STMicroelectronics

474 -
STFI24N60M2

数据表

MDmesh™ II Plus TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 190mOhm @ 9A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 600 V ±25V 1060 pF @ 100 V - - TO-281 (I2PAKFP) - 30W (Tc) -55°C ~ 150°C (TJ)
STB27NM60ND

STB27NM60ND

MOSFET N-CH 600V 21A D2PAK

STMicroelectronics

85 -
STB27NM60ND

数据表

FDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 160mOhm @ 10.5A, 10V Surface Mount 5V @ 250µA 80 nC @ 10 V 600 V ±25V 2400 pF @ 50 V AEC-Q101 - TO-263 (D2PAK) Automotive 160W (Tc) 150°C (TJ)
STP200N4F3

STP200N4F3

MOSFET N-CH 40V 120A TO220-3

STMicroelectronics

5,428 -
STP200N4F3

数据表

STripFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4.4mOhm @ 80A, 10V Through Hole 4V @ 250µA 75 nC @ 10 V 40 V ±20V 5100 pF @ 25 V - - TO-220 - 300W (Tc) -55°C ~ 175°C (TJ)
STH360N4F6-2

STH360N4F6-2

MOSFET N-CH 40V 180A H2PAK-2

STMicroelectronics

26 -
STH360N4F6-2

数据表

DeepGATE™, STripFET™ VI TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 1.25mOhm @ 60A, 10V Surface Mount 4.5V @ 250µA 340 nC @ 10 V 40 V ±20V 17930 pF @ 25 V - - H2PAK-2 - 300W (Tc) -55°C ~ 175°C (TJ)
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