| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STL17N65M5MOSFET N-CH 650V 1.8A POWERFLAT STMicroelectronics |
941 | - |
|
数据表 |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.8A (Ta), 10A (Tc) | 10V | 374mOhm @ 5.5A, 10V | Surface Mount | 5V @ 250µA | 22 nC @ 10 V | 650 V | ±25V | 816 pF @ 100 V | - | - | PowerFlat™ (8x8) HV | - | 2.8W (Ta), 70W (Tc) | 150°C (TJ) |
|
STFU18N65M2MOSFET N-CH 650V 12A TO220FP STMicroelectronics |
925 | - |
|
数据表 |
MDmesh™ M2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 330mOhm @ 6A, 10V | Through Hole | 4V @ 250µA | 20 nC @ 10 V | 650 V | ±25V | 770 pF @ 100 V | - | - | TO-220FP | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
STD7NM80-1MOSFET N-CH 800V 6.5A IPAK STMicroelectronics |
100 | - |
|
数据表 |
MDmesh™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 1.05Ohm @ 3.25A, 10V | Through Hole | 5V @ 250µA | 18 nC @ 10 V | 800 V | ±30V | 620 pF @ 25 V | - | - | TO-251 (IPAK) | - | 90W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STP80N6F6MOSFET N-CH 60V 110A TO220 STMicroelectronics |
634 | - |
|
数据表 |
DeepGATE™, STripFET™ VI | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 5.8mOhm @ 50A, 10V | Through Hole | 4.5V @ 250µA | 122 nC @ 10 V | 60 V | ±20V | 7480 pF @ 25 V | AEC-Q101 | - | TO-220 | Automotive | 120W (Tc) | -55°C ~ 175°C (TJ) |
|
|
STP110N55F6MOSFET N-CH 55V 110A TO220 STMicroelectronics |
413 | - |
|
数据表 |
DeepGATE™, STripFET™ VI | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 5.2mOhm @ 60A, 10V | Through Hole | 4V @ 250µA | 120 nC @ 10 V | 55 V | ±20V | 8350 pF @ 25 V | - | - | TO-220 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
STP10N62K3MOSFET N-CH 620V 8.4A TO220AB STMicroelectronics |
812 | - |
|
数据表 |
SuperMESH3™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.4A (Tc) | 10V | 750mOhm @ 4A, 10V | Through Hole | 4.5V @ 100µA | 42 nC @ 10 V | 620 V | ±30V | 1250 pF @ 50 V | - | - | TO-220 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
STW21N65M5MOSFET N-CH 650V 17A TO247-3 STMicroelectronics |
74 | - |
|
数据表 |
MDmesh™ V | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | Through Hole | 5V @ 250µA | 50 nC @ 10 V | 650 V | ±25V | 1950 pF @ 100 V | - | - | TO-247-3 | - | 125W (Tc) | 150°C (TJ) |
|
STI24N60M6MOSFET N-CH 600V I2PAK STMicroelectronics |
90 | - |
|
数据表 |
MDmesh™ M6 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tj) | 10V | 190mOhm @ 8.5A, 10V | Through Hole | 4.75V @ 250µA | 23 nC @ 10 V | 600 V | ±25V | 960 pF @ 100 V | - | - | I2PAK | - | 130W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STP210N75F6MOSFET N-CH 75V 120A TO220 STMicroelectronics |
46 | - |
|
数据表 |
DeepGATE™, STripFET™ VI | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 3.7mOhm @ 60A, 10V | Through Hole | 4V @ 250µA | 171 nC @ 10 V | 75 V | ±20V | 11800 pF @ 25 V | - | - | TO-220 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
STWA65N60DM6MOSFET N-CH 600V 38A TO247 STMicroelectronics |
35 | - |
|
数据表 |
MDmesh™ DM6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 38A (Tc) | - | - | Through Hole | - | - | 600 V | ±25V | - | - | - | TO-247 Long Leads | - | - | - |