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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STL17N65M5

STL17N65M5

MOSFET N-CH 650V 1.8A POWERFLAT

STMicroelectronics

941 -
STL17N65M5

数据表

MDmesh™ V 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.8A (Ta), 10A (Tc) 10V 374mOhm @ 5.5A, 10V Surface Mount 5V @ 250µA 22 nC @ 10 V 650 V ±25V 816 pF @ 100 V - - PowerFlat™ (8x8) HV - 2.8W (Ta), 70W (Tc) 150°C (TJ)
STFU18N65M2

STFU18N65M2

MOSFET N-CH 650V 12A TO220FP

STMicroelectronics

925 -
STFU18N65M2

数据表

MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 330mOhm @ 6A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 650 V ±25V 770 pF @ 100 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
STD7NM80-1

STD7NM80-1

MOSFET N-CH 800V 6.5A IPAK

STMicroelectronics

100 -
STD7NM80-1

数据表

MDmesh™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 1.05Ohm @ 3.25A, 10V Through Hole 5V @ 250µA 18 nC @ 10 V 800 V ±30V 620 pF @ 25 V - - TO-251 (IPAK) - 90W (Tc) -55°C ~ 150°C (TJ)
STP80N6F6

STP80N6F6

MOSFET N-CH 60V 110A TO220

STMicroelectronics

634 -
STP80N6F6

数据表

DeepGATE™, STripFET™ VI TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 5.8mOhm @ 50A, 10V Through Hole 4.5V @ 250µA 122 nC @ 10 V 60 V ±20V 7480 pF @ 25 V AEC-Q101 - TO-220 Automotive 120W (Tc) -55°C ~ 175°C (TJ)
STP110N55F6

STP110N55F6

MOSFET N-CH 55V 110A TO220

STMicroelectronics

413 -
STP110N55F6

数据表

DeepGATE™, STripFET™ VI TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 5.2mOhm @ 60A, 10V Through Hole 4V @ 250µA 120 nC @ 10 V 55 V ±20V 8350 pF @ 25 V - - TO-220 - 150W (Tc) -55°C ~ 175°C (TJ)
STP10N62K3

STP10N62K3

MOSFET N-CH 620V 8.4A TO220AB

STMicroelectronics

812 -
STP10N62K3

数据表

SuperMESH3™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.4A (Tc) 10V 750mOhm @ 4A, 10V Through Hole 4.5V @ 100µA 42 nC @ 10 V 620 V ±30V 1250 pF @ 50 V - - TO-220 - 125W (Tc) -55°C ~ 150°C (TJ)
STW21N65M5

STW21N65M5

MOSFET N-CH 650V 17A TO247-3

STMicroelectronics

74 -
STW21N65M5

数据表

MDmesh™ V TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 190mOhm @ 8.5A, 10V Through Hole 5V @ 250µA 50 nC @ 10 V 650 V ±25V 1950 pF @ 100 V - - TO-247-3 - 125W (Tc) 150°C (TJ)
STI24N60M6

STI24N60M6

MOSFET N-CH 600V I2PAK

STMicroelectronics

90 -
STI24N60M6

数据表

MDmesh™ M6 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tj) 10V 190mOhm @ 8.5A, 10V Through Hole 4.75V @ 250µA 23 nC @ 10 V 600 V ±25V 960 pF @ 100 V - - I2PAK - 130W (Tc) -55°C ~ 150°C (TJ)
STP210N75F6

STP210N75F6

MOSFET N-CH 75V 120A TO220

STMicroelectronics

46 -
STP210N75F6

数据表

DeepGATE™, STripFET™ VI TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.7mOhm @ 60A, 10V Through Hole 4V @ 250µA 171 nC @ 10 V 75 V ±20V 11800 pF @ 25 V - - TO-220 - 300W (Tc) -55°C ~ 175°C (TJ)
STWA65N60DM6

STWA65N60DM6

MOSFET N-CH 600V 38A TO247

STMicroelectronics

35 -
STWA65N60DM6

数据表

MDmesh™ DM6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 38A (Tc) - - Through Hole - - 600 V ±25V - - - TO-247 Long Leads - - -
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