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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STW80NE06-10MOSFET N-CH 60V 80A TO247-3 STMicroelectronics |
4,029 | - |
|
数据表 |
STripFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 10mOhm @ 40A, 10V | Through Hole | 4V @ 250µA | 189 nC @ 10 V | 60 V | ±20V | 7600 pF @ 25 V | - | - | TO-247-3 | - | 250W (Tc) | 175°C (TJ) |
|
STW32N65M5MOSFET N-CH 650V 24A TO247-3 STMicroelectronics |
506 | - |
|
数据表 |
MDmesh™ V | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 119mOhm @ 12A, 10V | Through Hole | 5V @ 250µA | 72 nC @ 10 V | 650 V | ±25V | 3320 pF @ 100 V | - | - | TO-247-3 | - | 150W (Tc) | 150°C (TJ) |
|
SCTWA10N120IC POWER MOSFET 1200V HIP247 STMicroelectronics |
499 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 12A (Tc) | 20V | 690mOhm @ 6A, 20V | Through Hole | 3.5V @ 250µA (Typ) | 21 nC @ 20 V | 1200 V | +25V, -10V | 300 pF @ 1000 V | - | - | HiP247™ Long Leads | - | 110W (Tc) | -55°C ~ 200°C (TJ) |
|
STW56N65DM2MOSFET N-CH 650V 48A TO247 STMicroelectronics |
925 | - |
|
数据表 |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 48A (Tc) | 10V | 65mOhm @ 24A, 10V | Through Hole | 5V @ 250µA | 88 nC @ 10 V | 650 V | ±25V | 4100 pF @ 100 V | - | - | TO-247-3 | - | 360W (Tc) | -55°C ~ 150°C (TJ) |
|
STW68N60M6MOSFET N-CH 600V TO247-3 STMicroelectronics |
103 | - |
|
数据表 |
MDmesh™ M6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 63A (Tc) | 0V, 10V | 41mOhm @ 31.5A, 10V | Through Hole | 4.75V @ 250µA | 106 nC @ 10 V | 600 V | ±25V | 4360 pF @ 100 V | - | - | TO-247-3 | - | 390W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SCTWA20N120IC POWER MOSFET 1200V HIP247 STMicroelectronics |
526 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 20A (Tc) | 20V | 239mOhm @ 10A, 20V | Through Hole | 3.5V @ 1mA (Typ) | 45 nC @ 20 V | 1200 V | +25V, -10V | 650 pF @ 400 V | - | - | HiP247™ Long Leads | - | 175W (Tc) | -55°C ~ 200°C (TJ) |
|
|
STW70N60DM6-4MOSFET N-CH 600V 62A TO247-4 STMicroelectronics |
150 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 62A (Tc) | 10V | 42mOhm @ 31A, 10V | Through Hole | 4.75V @ 250µA | 99 nC @ 10 V | 600 V | ±25V | 4360 pF @ 100 V | - | - | TO-247-4 | - | 390W (Tc) | -55°C ~ 150°C (TJ) |
|
STL42N65M5MOSFET N-CH 650V 4A PWRFLAT HV STMicroelectronics |
2,915 | - |
|
数据表 |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Ta), 34A (Tc) | 10V | 79mOhm @ 16.5A, 10V | Surface Mount | 5V @ 250µA | 100 nC @ 10 V | 650 V | ±25V | 4650 pF @ 100 V | - | - | PowerFlat™ (8x8) HV | - | 3W (Ta), 208W (Tc) | 150°C (TJ) |
|
STFW60N65M5MOSFET N-CH 650V 46A ISOWATT STMicroelectronics |
282 | - |
|
数据表 |
MDmesh™ V | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 46A (Tc) | 10V | 59mOhm @ 23A, 10V | Through Hole | 5V @ 250µA | 139 nC @ 10 V | 650 V | ±25V | 6810 pF @ 100 V | - | - | TO-3PF | - | 79W (Tc) | 150°C (TJ) |
|
STS17NF3LLMOSFET N-CH 30V 17A 8SO STMicroelectronics |
8,010 | - |
|
数据表 |
STripFET™ II | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 4.5V, 10V | 5.5mOhm @ 8.5A, 10V | Surface Mount | 1V @ 250µA | 35 nC @ 4.5 V | 30 V | ±18V | 2160 pF @ 25 V | - | - | 8-SOIC | - | 3.2W (Tc) | -55°C ~ 175°C (TJ) |
