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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STD1HNC60T4

STD1HNC60T4

MOSFET N-CH 600V 2A DPAK

STMicroelectronics

6,792 -
STD1HNC60T4

数据表

PowerMESH™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 5Ohm @ 1A, 10V Surface Mount 4V @ 250µA 15.5 nC @ 10 V 600 V ±30V 228 pF @ 25 V - - DPAK - 50W (Tc) 150°C (TJ)
STP19NB20

STP19NB20

MOSFET N-CH 200V 19A TO220AB

STMicroelectronics

5,265 -
STP19NB20

数据表

PowerMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 180mOhm @ 9.5A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 200 V ±30V 1000 pF @ 25 V - - TO-220 - 125W (Tc) 150°C (TJ)
STY34NB50

STY34NB50

MOSFET N-CH 500V 34A MAX247

STMicroelectronics

3,950 -
STY34NB50

数据表

PowerMESH™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 130mOhm @ 17A, 10V Through Hole 5V @ 250µA 223 nC @ 10 V 500 V ±30V 9100 pF @ 25 V - - MAX247™ - 450W (Tc) 150°C (TJ)
STP12PF06

STP12PF06

MOSFET P-CH 60V 12A TO220AB

STMicroelectronics

9,954 -
STP12PF06

数据表

STripFET™ II TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 200mOhm @ 10A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 60 V ±20V 850 pF @ 25 V - - TO-220 - 60W (Tc) -55°C ~ 175°C (TJ)
IRF840

IRF840

MOSFET N-CH 500V 8A TO220AB

STMicroelectronics

3,924 -
IRF840

数据表

PowerMESH™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 850mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 39 nC @ 10 V 500 V ±20V 832 pF @ 25 V - - TO-220 - 125W (Tc) 150°C (TJ)
IRF830

IRF830

MOSFET N-CH 500V 4.5A TO220AB

STMicroelectronics

3,756 -
IRF830

数据表

PowerMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 500 V ±20V 610 pF @ 25 V - - TO-220 - 100W (Tc) 150°C (TJ)
IRF820

IRF820

MOSFET N-CH 500V 4A TO220AB

STMicroelectronics

5,010 -
IRF820

数据表

PowerMESH™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 500 V ±30V 315 pF @ 25 V - - TO-220 - 80W (Tc) 150°C (TJ)
STW60N65M5

STW60N65M5

MOSFET N-CH 650V 46A TO247

STMicroelectronics

575 -
STW60N65M5

数据表

MDmesh™ V TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 46A (Tc) 10V 59mOhm @ 23A, 10V Through Hole 5V @ 250µA 139 nC @ 10 V 650 V ±25V 6810 pF @ 100 V - - TO-247-3 - 255W (Tc) 150°C (TJ)
STP16NF06L

STP16NF06L

MOSFET N-CH 60V 16A TO220AB

STMicroelectronics

3,781 -
STP16NF06L

数据表

STripFET™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V, 5V 90mOhm @ 8A, 10V Through Hole 2.5V @ 250µA 10 nC @ 5 V 60 V ±16V 345 pF @ 25 V - - TO-220 - 45W (Tc) -55°C ~ 175°C (TJ)
STP80NE06-10

STP80NE06-10

MOSFET N-CH 60V 80A TO220AB

STMicroelectronics

9,874 -
STP80NE06-10

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 10mOhm @ 40A, 10V Through Hole 4V @ 250µA 140 nC @ 10 V 60 V ±20V 10000 pF @ 25 V - - TO-220 - 150W (Tc) 175°C (TJ)
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