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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STL18N55M5

STL18N55M5

MOSFET N-CH 550V 2.4A POWERFLAT

STMicroelectronics

869 -
STL18N55M5

数据表

MDmesh™ V 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Ta), 13A (Tc) 10V 270mOhm @ 6A, 10V Surface Mount 5V @ 250µA 31 nC @ 10 V 550 V ±25V 1352 pF @ 100 V - - PowerFlat™ (8x8) HV - 3W (Ta), 90W (Tc) 150°C (TJ)
STB200N6F3

STB200N6F3

MOSFET N-CH 60V 120A D2PAK

STMicroelectronics

292 -
STB200N6F3

数据表

STripFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.6mOhm @ 60A, 10V Surface Mount 4V @ 250µA 100 nC @ 10 V 60 V ±20V 6800 pF @ 25 V - - D2PAK - 330W (Tc) -55°C ~ 175°C (TJ)
STI34N65M5

STI34N65M5

MOSFET N-CH 650V 28A I2PAKFP

STMicroelectronics

991 -
STI34N65M5

数据表

MDmesh™ V TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 110mOhm @ 14A, 10V Through Hole 5V @ 250µA 62.5 nC @ 10 V 650 V ±25V 2700 pF @ 100 V - - TO-281 (I2PAKFP) - 190W (Tc) -55°C ~ 150°C (TJ)
STP32N65M5

STP32N65M5

MOSFET N-CH 650V 24A TO220AB

STMicroelectronics

300 -
STP32N65M5

数据表

MDmesh™ V TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 119mOhm @ 12A, 10V Through Hole 5V @ 250µA 72 nC @ 10 V 650 V ±25V 3320 pF @ 100 V - - TO-220 - 150W (Tc) 150°C (TJ)
STI260N6F6

STI260N6F6

MOSFET N-CH 75V 120A I2PAK

STMicroelectronics

891 -
STI260N6F6

数据表

DeepGATE™, STripFET™ VI TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3mOhm @ 60A, 10V Through Hole 4V @ 250µA 183 nC @ 10 V 75 V ±20V 11400 pF @ 25 V - - I2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
STW18NM60ND

STW18NM60ND

MOSFET N-CH 600V 13A TO247

STMicroelectronics

254 -
STW18NM60ND

数据表

FDmesh™ II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 290mOhm @ 6.5A, 10V Through Hole 5V @ 250µA 34 nC @ 10 V 600 V ±25V 1030 pF @ 50 V - - TO-247-3 - 110W (Tc) 150°C (TJ)
STFI13N95K3

STFI13N95K3

MOSFET N CH 950V 10A I2PAKFP

STMicroelectronics

290 -
STFI13N95K3

数据表

SuperMESH3™ TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 850mOhm @ 5A, 10V Through Hole 5V @ 100µA 51 nC @ 10 V 950 V ±30V 1620 pF @ 100 V - - TO-281 (I2PAKFP) - 40W (Tc) -55°C ~ 150°C (TJ)
STB19NM65N

STB19NM65N

MOSFET N-CH 650V 15.5A D2PAK

STMicroelectronics

776 -
STB19NM65N

数据表

MDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15.5A (Tc) 10V 270mOhm @ 7.75A, 10V Surface Mount 4V @ 250µA 55 nC @ 10 V 650 V ±25V 1900 pF @ 50 V - - D2PAK - 150W (Tc) 150°C (TJ)
STP34N65M5

STP34N65M5

MOSFET N-CH 650V 28A TO220

STMicroelectronics

241 -
STP34N65M5

数据表

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 110mOhm @ 14A, 10V Through Hole 5V @ 250µA 62.5 nC @ 10 V 650 V ±25V 2700 pF @ 100 V - - TO-220 - 190W (Tc) 150°C (TJ)
STF21NM60ND

STF21NM60ND

MOSFET N-CH 600V 17A TO220FP

STMicroelectronics

689 -
STF21NM60ND

数据表

FDmesh™ II TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 220mOhm @ 8.5A, 10V Through Hole 5V @ 250µA 60 nC @ 10 V 600 V ±25V 1800 pF @ 50 V - - TO-220FP - 30W (Tc) 150°C (TJ)
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