富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMP2006UFGQ-7

DMP2006UFGQ-7

MOSFET P-CH 20V PWRDI3333

Diodes Incorporated

1,480 -
DMP2006UFGQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 17.5A (Ta), 40A (Tc) 1.5V, 4.5V 5.5mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 200 nC @ 10 V 20 V ±10V 7500 pF @ 10 V AEC-Q101 - POWERDI3333-8 Automotive 2.3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
DMTH43M8LK3-13

DMTH43M8LK3-13

MOSFET N-CHANNEL 40V 100A TO252

Diodes Incorporated

1,096 -
DMTH43M8LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 3.6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 38.5 nC @ 10 V 40 V ±20V 2693 pF @ 20 V - - TO-252 (DPAK) - 88W (Ta) -55°C ~ 175°C (TJ)
XP10TN135K

XP10TN135K

MOSFET N-CH 100V 3A SOT223

YAGEO XSEMI

958 -
XP10TN135K

数据表

XP10TN135 TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 4.5V, 10V 135mOhm @ 3A, 10V Surface Mount 3V @ 250µA 20 nC @ 10 V 100 V ±20V 980 pF @ 25 V - - SOT-223 - 2.78W (Ta) -55°C ~ 150°C (TJ)
HUF76432P3

HUF76432P3

MOSFET N-CH 60V 59A TO220-3

onsemi

8,403 -
HUF76432P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V Through Hole 3V @ 250µA 53 nC @ 10 V 60 V ±16V 1765 pF @ 25 V - - TO-220-3 - 130W (Tc) -55°C ~ 175°C (TJ)
FQP19N20L

FQP19N20L

MOSFET N-CH 200V 21A TO220-3

onsemi

9,577 -
FQP19N20L

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 5V, 10V 140mOhm @ 10.5A, 10V Through Hole 2V @ 250µA 35 nC @ 5 V 200 V ±20V 2200 pF @ 25 V - - TO-220-3 - 140W (Tc) -55°C ~ 150°C (TJ)
AONS62920

AONS62920

N

Alpha & Omega Semiconductor Inc.

4,674 -
AONS62920

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 48A (Tc) 4.5V, 10V 6.3mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 95 nC @ 10 V 100 V ±20V 4525 pF @ 50 V - - 8-DFN (5x6) - 6.2W (Ta), 113.5W (Tc) -55°C ~ 150°C (TJ)
PJF12NA60_T0_00001

PJF12NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

8,641 -
PJF12NA60_T0_00001

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 700mOhm @ 6A, 10V Through Hole 4V @ 250µA 24 nC @ 10 V 600 V ±30V 1492 pF @ 25 V - - ITO-220AB - 51W (Tc) -55°C ~ 150°C (TJ)
AOT412

AOT412

MOSFET N-CH 100V 8.2A/60A TO220

Alpha & Omega Semiconductor Inc.

3,182 -
AOT412

数据表

SDMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 8.2A (Ta), 60A (Tc) 7V, 10V 15.8mOhm @ 20A, 10V Through Hole 3.8V @ 250µA 54 nC @ 10 V 100 V ±25V 3220 pF @ 50 V - - TO-220 - 2.6W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
AOT13N50

AOT13N50

MOSFET N-CH 500V 13A TO220

Alpha & Omega Semiconductor Inc.

3,990 -
AOT13N50

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 510mOhm @ 6.5A, 10V Through Hole 4.5V @ 250µA 37 nC @ 10 V 500 V ±30V 1633 pF @ 25 V - - TO-220 - 250W (Tc) -55°C ~ 150°C (TJ)
AOTF13N50

AOTF13N50

MOSFET N-CH 500V 13A TO220-3F

Alpha & Omega Semiconductor Inc.

8,405 -
AOTF13N50

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 510mOhm @ 6.5A, 10V Through Hole 4.5V @ 250µA 37 nC @ 10 V 500 V ±30V 1633 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
IRFR1010ZTRRPBF

IRFR1010ZTRRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

4,053 -
IRFR1010ZTRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 7.5mOhm @ 42A, 10V Surface Mount 4V @ 100µA 95 nC @ 10 V 55 V ±20V 2840 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
STP7NK40ZFP

STP7NK40ZFP

MOSFET N-CH 400V 5.4A TO220FP

STMicroelectronics

9,051 -
STP7NK40ZFP

数据表

SuperMESH™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.4A (Tc) 10V 1Ohm @ 2.7A, 10V Through Hole 4.5V @ 50µA 26 nC @ 10 V 400 V ±30V 535 pF @ 25 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
DMTH41M8SPS-13

DMTH41M8SPS-13

MOSFET N-CH 40V 100A PWRDI5060-8

Diodes Incorporated

7,095 -
DMTH41M8SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 1.8mOhm @ 30A, 10V Surface Mount 4V @ 250µA 79.5 nC @ 10 V 40 V ±20V 6968 pF @ 20 V - - PowerDI5060-8 (Type K) - 3.03W -55°C ~ 175°C (TJ)
SPP04N60C3HKSA1

SPP04N60C3HKSA1

MOSFET N-CH 650V 4.5A TO220-3

Infineon Technologies

6,324 -
SPP04N60C3HKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V Through Hole 3.9V @ 200µA 25 nC @ 10 V 650 V ±20V 490 pF @ 25 V - - PG-TO220-3-1 - 50W (Tc) -55°C ~ 150°C (TJ)
SIA110DJ-T1-GE3

SIA110DJ-T1-GE3

MOSFET N-CH 100V 5.4A/12A PPAK

Vishay Siliconix

5,330 -
SIA110DJ-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.4A (Ta), 12A (Tc) 7.5V, 10V 55mOhm @ 4A, 10V Surface Mount 4V @ 250µA 13 nC @ 10 V 100 V ±20V 550 pF @ 50 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ)
SIS108DN-T1-GE3

SIS108DN-T1-GE3

MOSFET N-CH 80V 6.7A/16A PPAK

Vishay Siliconix

5,000 -
SIS108DN-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.7A (Ta), 16A (Tc) 7.5V, 10V 34mOhm @ 4A, 10V Surface Mount 4V @ 250µA 13 nC @ 10 V 80 V ±20V 545 pF @ 40 V - - PowerPAK® 1212-8 - 3.2W (Ta), 24W (Tc) -55°C ~ 150°C (TJ)
IRFU120_R4941

IRFU120_R4941

MOSFET N-CH 100V 8.4A I-PAK

onsemi

8,335 -
IRFU120_R4941

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.4A (Tc) - 270mOhm @ 5.9A, 10V Through Hole 4V @ 250µA 15 nC @ 10 V 100 V - 350 pF @ 25 V - - IPAK - - -
IRFR120ZTR

IRFR120ZTR

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies

4,705 -
IRFR120ZTR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V Surface Mount 4V @ 250µA 10 nC @ 10 V 100 V ±20V 310 pF @ 25 V - - TO-252AA (DPAK) - 35W (Tc) -55°C ~ 175°C (TJ)
DMT61M8SPS-13

DMT61M8SPS-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

4,520 -
DMT61M8SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 205A (Tc) 10V 1.6mOhm @ 30A, 10V Surface Mount 4V @ 250µA 130.6 nC @ 10 V 60 V ±20V 8306 pF @ 30 V - - PowerDI5060-8 (Type K) - 2.7W (Ta), 139W (Tc) -55°C ~ 150°C (TJ)
SPP04N60S5BKSA1

SPP04N60S5BKSA1

MOSFET N-CH 600V 4.5A TO220-3

Infineon Technologies

6,483 -
SPP04N60S5BKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V Through Hole 5.5V @ 200µA 22.9 nC @ 10 V 600 V ±20V 580 pF @ 25 V - - PG-TO220-3-1 - 50W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户