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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HAT1139H-EL-EP-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SJ387L-EP-CHANNEL POWER MOSFET Renesas Electronics Corporation |
446 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK2462(04)-AZN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
21,036 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NP80N04MHE-S18-AYMOSFET N-CH 40V 80A TO220 Renesas Electronics Corporation |
227,950 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | - | 8mOhm @ 40A, 10V | Through Hole | 4V @ 250µA | 60 nC @ 10 V | 40 V | - | 3300 pF @ 25 V | - | - | TO-220 | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) |
|
|
NP80N04MLG-S18-AYMOSFET N-CH 40V 80A TO220 Renesas Electronics Corporation |
6,697 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | - | 4.8mOhm @ 40A, 10V | Through Hole | 2.5V @ 250µA | 135 nC @ 10 V | 40 V | - | 6900 pF @ 25 V | - | - | TO-220 | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) |
|
|
NP80N04NHE-S18-AYMOSFET N-CH 40V 80A TO262 Renesas Electronics Corporation |
2,250 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | - | 8mOhm @ 40A, 10V | Through Hole | 4V @ 250µA | 60 nC @ 10 V | 40 V | - | 3300 pF @ 25 V | - | - | TO-262 | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) |
|
NP80N04PDG-E1B-AYMOSFET N-CH 40V 80A TO263-3 Renesas Electronics Corporation |
1,000 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | - | 4.5mOhm @ 40A, 10V | Surface Mount | 2.5V @ 250µA | 135 nC @ 10 V | 40 V | - | 6900 pF @ 25 V | - | - | TO-263-3 | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) |
|
2SK972-94-EN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
537 | - |
|
数据表 |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK1626-EMOSFET N-CH 450V 5A Renesas Electronics Corporation |
509 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NP80N04NDG-S18-AYMOSFET N-CH 40V 80A TO262 Renesas Electronics Corporation |
400 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | - | 4.8mOhm @ 40A, 10V | Through Hole | 2.5V @ 250µA | 135 nC @ 10 V | 40 V | - | 6900 pF @ 25 V | - | - | TO-262 | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) |
