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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN2R6-40YS/2X

PSMN2R6-40YS/2X

PSMN2R6-40YS/SOT669/LFPAK

Nexperia USA Inc.

6,679 -
PSMN2R6-40YS/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2.8mOhm @ 25A, 10V Surface Mount 4V @ 1mA 63 nC @ 10 V 40 V ±20V 3776 pF @ 12 V - - LFPAK56, Power-SO8 - 131W (Tc) -55°C ~ 175°C (TJ)
DMTH10H010SPSWQ-13

DMTH10H010SPSWQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

7,776 -
DMTH10H010SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Ta), 100A (Tc) 6V, 10V 8.8mOhm @ 13A, 10V Surface Mount, Wettable Flank 4V @ 250µA 56.4 nC @ 10 V 100 V ±20V 4468 pF @ 50 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 3W (Ta), 166W (Tc) -55°C ~ 175°C (TJ)
IRCZ24PBF

IRCZ24PBF

MOSFET N-CH 55V 17A TO220-5

Vishay Siliconix

8,843 -
IRCZ24PBF

数据表

HEXFET® TO-220-5 Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 100mOhm @ 10A, 10V Through Hole 4V @ 250µA 24 nC @ 10 V 55 V ±20V 720 pF @ 25 V - Current Sensing TO-220-5 - 60W (Tc) -55°C ~ 175°C (TJ)
AONS21113

AONS21113

P

Alpha & Omega Semiconductor Inc.

2,887 -
AONS21113

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 44A (Ta), 70A (Tc) 2.5V, 10V 2.2mOhm @ 20A, 10V Surface Mount 1.1V @ 250µA 550 nC @ 10 V 20 V ±12V 18700 pF @ 10 V - - 8-DFN (5x6) - 6.2W (Ta), 138W (Tc) -55°C ~ 150°C (TJ)
NTNS3C94NZT5G

NTNS3C94NZT5G

MOSFET N-CHANNEL 12V 384MA

onsemi

9,905 -
NTNS3C94NZT5G

数据表

- 3-XFDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 384mA (Ta) 1.5V, 4.5V 480mOhm @ 100mA, 4.5V Surface Mount 1V @ 250µA 0.6 nC @ 4.5 V 12 V ±8V 35 pF @ 9.6 V - - 3-XLLGA (0.62x0.62) - 120mW (Ta) -55°C ~ 150°C (TJ)
MCACL200N04YA-TP

MCACL200N04YA-TP

MOSFET N-CH 40 200A DFN5060-C

Micro Commercial Co

6,867 -
MCACL200N04YA-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 4.5V, 10V 1.3mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 126 nC @ 10 V 40 V ±20V 7400 pF @ 25 V - - DFN5060-C - 156W (Tj) -55°C ~ 150°C (TJ)
DMT10H009LH3

DMT10H009LH3

MOSFET N-CH 100V 84A TO251

Diodes Incorporated

2,618 -
DMT10H009LH3

数据表

- TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 84A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 20.2 nC @ 4.5 V 100 V ±20V 2309 pF @ 50 V - - TO-251 - 96W (Tc) -55°C ~ 150°C (TJ)
DMT10H9M9SH3

DMT10H9M9SH3

MOSFET BVDSS: 61V~100V TO251 TUB

Diodes Incorporated

6,489 -
DMT10H9M9SH3

数据表

- TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 84A (Tc) 6V, 10V 9mOhm @ 20A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 100 V ±20V 2085 pF @ 50 V - - TO-251 - 114W (Tc) -55°C ~ 150°C (TJ)
2SK2845(TE16L1,Q)

2SK2845(TE16L1,Q)

MOSFET N-CH 900V 1A DP

Toshiba Semiconductor and Storage

6,592 -
2SK2845(TE16L1,Q)

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Ta) 10V 9Ohm @ 500mA, 10V Surface Mount 4V @ 1mA 15 nC @ 10 V 900 V ±30V 350 pF @ 25 V - - PW-MOLD - 40W (Tc) 150°C (TJ)
PJF10NA60_T0_00001

PJF10NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

3,496 -
PJF10NA60_T0_00001

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 900mOhm @ 5A, 10V Through Hole 4V @ 250µA 23 nC @ 10 V 600 V ±30V 1192 pF @ 25 V - - ITO-220AB - 50W (Tc) -55°C ~ 150°C (TJ)
DI035P04PT

DI035P04PT

MOSFET POWERQFN 3X3 P -40V -35A

Diotec Semiconductor

4,750 -
DI035P04PT

数据表

- 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 19mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 30 nC @ 10 V 40 V ±20V 2570 pF @ 20 V - - 8-QFN (3x3) - 40W (Tc) -55°C ~ 150°C (TJ)
PXN012-100QSJ

PXN012-100QSJ

N-CHANNEL 100 V, 12 MOHM, STANDA

Nexperia USA Inc.

4,423 -
PXN012-100QSJ

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A 10V - Surface Mount - 22 nC @ 10 V 100 V - - - - MLPAK33 - 58W -
DI7A6N10SQ

DI7A6N10SQ

MOSFET SO8 N 100V 0.02OHM 150C

Diotec Semiconductor

3,986 -
DI7A6N10SQ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.6A (Ta) 6V, 10V 20mOhm @ 7.5A, 10V Surface Mount 4V @ 250µA 22 nC @ 10 V 100 V ±20V 1650 pF @ 25 V AEC-Q101 - 8-SO Automotive 2.5W (Ta) -55°C ~ 150°C (TJ)
PJQ4404P-AU_R2_000A1

PJQ4404P-AU_R2_000A1

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,025 -
PJQ4404P-AU_R2_000A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Ta), 60A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 12 nC @ 4.5 V 30 V ±20V 1323 pF @ 25 V AEC-Q101 - DFN3333-8 Automotive 2W (Ta), 31W (Tc) -55°C ~ 150°C (TJ)
XP151A11B0MR-G

XP151A11B0MR-G

MOSFET N-CH 30V 1A SOT23

Torex Semiconductor Ltd

2,967 -
XP151A11B0MR-G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Ta) 4.5V, 10V 120mOhm @ 500mA, 10V Surface Mount - - 30 V ±20V 150 pF @ 10 V - - SOT-23 - 500mW (Ta) 150°C (TJ)
MCAC012N06H-TP

MCAC012N06H-TP

MOSFET N-CH 60 60A DFN5060

Micro Commercial Co

2,900 -
MCAC012N06H-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 12mOhm @ 27.5A, 10V Surface Mount 4V @ 250µA 41 nC @ 10 V 60 V ±20V 1995 pF @ 30 V - - DFN5060 - 104W (Tj) -55°C ~ 150°C (TJ)
SIS472BDN-T1-GE3

SIS472BDN-T1-GE3

MOSFET N-CH 30V 15.3A/38.3A PPAK

Vishay Siliconix

2,181 -
SIS472BDN-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.3A (Ta), 38.3A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 21.5 nC @ 10 V 30 V +20V, -16V 1000 pF @ 15 V - - PowerPAK® 1212-8 - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ)
DMN3024LSS-13

DMN3024LSS-13

MOSFET N-CH 30V 6.4A 8SO

Diodes Incorporated

2,056 -
DMN3024LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.4A (Ta) 4.5V, 10V 24mOhm @ 7A, 10V Surface Mount 3V @ 250µA 12.9 nC @ 10 V 30 V ±20V 608 pF @ 15 V - - 8-SO - 1.6W (Ta) -55°C ~ 150°C (TJ)
TSM3481CX6 RFG

TSM3481CX6 RFG

MOSFET P-CHANNEL 30V 5.7A SOT26

Taiwan Semiconductor Corporation

5,806 -
TSM3481CX6 RFG

数据表

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.7A (Ta) 4.5V, 10V 48mOhm @ 5.3A, 10V Surface Mount 3V @ 250µA 18.09 nC @ 10 V 30 V ±20V 1047.98 pF @ 15 V - - SOT-26 - 1.6W (Ta) -55°C ~ 150°C (TJ)
PJQ4437EP_R2_00201

PJQ4437EP_R2_00201

30V P-CHANNEL STANDARD TRENCH MO

Panjit International Inc.

5,000 -
PJQ4437EP_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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