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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJP4NA65H_T0_00001

PJP4NA65H_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

6,812 -
PJP4NA65H_T0_00001

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3.75Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 16.1 nC @ 10 V 650 V ±30V 423 pF @ 25 V - - TO-220AB - 44W (Tc) -55°C ~ 150°C (TJ)
PJF4NA65A_T0_00001

PJF4NA65A_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

4,052 -
PJF4NA65A_T0_00001

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 2.7Ohm @ 2A, 10V Through Hole 4V @ 250µA 18 nC @ 10 V 650 V ±30V 555 pF @ 25 V - - ITO-220AB - 33W (Tc) -55°C ~ 150°C (TJ)
PJQ1906_R1_00201

PJQ1906_R1_00201

20V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,164 -
PJQ1906_R1_00201

数据表

- 3-UFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300mA (Ta) 1.2V, 4.5V 1.2Ohm @ 300mA, 4.5V Surface Mount 1V @ 250µA 0.9 nC @ 4.5 V 30 V ±10V 45 pF @ 10 V - - DFN1006-3 - 700mW (Ta) -55°C ~ 150°C (TJ)
PJL9420_R2_00001

PJL9420_R2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

7,702 -
PJL9420_R2_00001

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V, 10V 5.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 25 nC @ 4.5 V 40 V ±20V 1258 pF @ 25 V - - 8-SOP - 2.1W (Ta) -55°C ~ 150°C (TJ)
PJA3448_R1_00001

PJA3448_R1_00001

SOT-23, MOSFET

Panjit International Inc.

3,688 -
PJA3448_R1_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.3A (Ta) 4.5V, 10V 71mOhm @ 3.3A, 10V Surface Mount 2.1V @ 250µA 6.1 nC @ 10 V 40 V ±20V 241 pF @ 20 V - - SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
PJP5NA50_T0_00001

PJP5NA50_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

5,771 -
PJP5NA50_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.55Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 11 nC @ 10 V 500 V ±30V 491 pF @ 25 V - - TO-220AB - 87.5W (Tc) -55°C ~ 150°C (TJ)
PJP2NA60_T0_00001

PJP2NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

3,204 -
PJP2NA60_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 4.4Ohm @ 1A, 10V Through Hole 4V @ 250µA 5.7 nC @ 10 V 600 V ±30V 257 pF @ 25 V - - TO-220AB - 44W (Tc) -55°C ~ 150°C (TJ)
PJD12P06-AU_L2_000A1

PJD12P06-AU_L2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,787 -
PJD12P06-AU_L2_000A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 2.6A (Ta), 12A (Tc) 10V 155mOhm @ 6A, 10V Surface Mount 4V @ 250µA 10.9 nC @ 10 V 60 V ±20V 385 pF @ 25 V AEC-Q101 - TO-252AA Automotive 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
PJA3414_R1_00001

PJA3414_R1_00001

SOT-23, MOSFET

Panjit International Inc.

8,146 -
PJA3414_R1_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.2A (Ta) 1.8V, 4.5V 36mOhm @ 5.2A, 4.5V Surface Mount 1.2V @ 250µA 4.1 nC @ 4.5 V 20 V ±12V 396 pF @ 10 V - - SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
PJC7002H_R1_00001

PJC7002H_R1_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,332 -
PJC7002H_R1_00001

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250mA (Ta) 5V, 10V 5Ohm @ 300mA, 10V Surface Mount 3V @ 250µA 1.3 nC @ 4.5 V 60 V ±20V 22 pF @ 25 V - - SOT-323 - 350mW (Ta) -55°C ~ 150°C (TJ)
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