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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJF4NA50A_T0_00001

PJF4NA50A_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

8,185 -
PJF4NA50A_T0_00001

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 2.3Ohm @ 2A, 10V Through Hole 4V @ 250µA 9.8 nC @ 10 V 500 V ±30V 449 pF @ 25 V - - ITO-220AB - 42W (Tc) -55°C ~ 150°C (TJ)
PJA3416A_R1_00001

PJA3416A_R1_00001

SOT-23, MOSFET

Panjit International Inc.

21 -
PJA3416A_R1_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.8A (Ta) 1.8V, 4.5V 24mOhm @ 5.8A, 4.5V Surface Mount 1.2V @ 250µA 10.4 nC @ 4.5 V 20 V ±12V 592 pF @ 10 V - - SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
PJF4NA65H_T0_00001

PJF4NA65H_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

8,638 -
PJF4NA65H_T0_00001

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3.75Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 16.1 nC @ 10 V 650 V ±30V 423 pF @ 25 V - - ITO-220AB - 23W (Tc) -55°C ~ 150°C (TJ)
PJP35N06A_T0_00001

PJP35N06A_T0_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,723 -
PJP35N06A_T0_00001

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 4.7A (Ta), 35A (Tc) 4.5V, 10V 21mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 28 nC @ 10 V 60 V ±20V 1680 pF @ 20 V - - TO-220AB - 2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
PJQ5445_R2_00001

PJQ5445_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,916 -
PJQ5445_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 8.5A (Ta), 45A (Tc) 4.5V, 10V 17mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 19 nC @ 4.5 V 40 V ±20V 2030 pF @ 25 V - - DFN5060-8 - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ)
PJQ5463A-AU_R2_000A1

PJQ5463A-AU_R2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,061 -
PJQ5463A-AU_R2_000A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 4A (Ta), 15A (Tc) 4.5V, 10V 68mOhm @ 7.5A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 10 V 60 V ±20V 879 pF @ 30 V AEC-Q101 - DFN5060-8 Automotive 2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
PJD2NA1K_L2_00001

PJD2NA1K_L2_00001

1000V N-CHANNEL MOSFET

Panjit International Inc.

2,842 -
PJD2NA1K_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 9Ohm @ 1A, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 1000 V ±30V 385 pF @ 25 V - - TO-252AA - 50W (Tc) -55°C ~ 150°C (TJ)
PJD8NA65A_L2_00001

PJD8NA65A_L2_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

3,535 -
PJD8NA65A_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 10V 1.2Ohm @ 3.75A, 10V Surface Mount 4V @ 250µA 29 nC @ 10 V 650 V ±30V 1245 pF @ 25 V - - TO-252AA - 140W (Tc) -55°C ~ 150°C (TJ)
PJP4NA50A_T0_00001

PJP4NA50A_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

8,663 -
PJP4NA50A_T0_00001

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 2.3Ohm @ 2A, 10V Through Hole 4V @ 250µA 9.8 nC @ 10 V 500 V ±30V 449 pF @ 25 V - - TO-220AB - 90W (Tc) -55°C ~ 150°C (TJ)
PJP40N06A_T0_00001

PJP40N06A_T0_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,578 -
PJP40N06A_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 13.5 nC @ 4.5 V 60 V ±20V 1574 pF @ 25 V - - TO-220AB - 93W (Tc) -55°C ~ 150°C (TJ)
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