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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJE8412_R1_00001

PJE8412_R1_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,893 -
PJE8412_R1_00001

数据表

- SOT-523 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 350mA (Ta) 1.5V, 4.5V 1.2Ohm @ 350mA, 4.5V Surface Mount 1.1V @ 250µA 0.87 nC @ 4.5 V 30 V ±10V 34 pF @ 15 V - - SOT-523 - 300mW (Ta) -55°C ~ 150°C (TJ)
PJQ2407_R1_00001

PJQ2407_R1_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,165 -
PJQ2407_R1_00001

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.4A (Ta) 4.5V, 10V 20mOhm @ 8.4A, 10V Surface Mount 2.5V @ 250µA 11 nC @ 4.5 V 30 V ±20V 1169 pF @ 15 V - - DFN2020B-6 - 2W (Ta) -55°C ~ 150°C (TJ)
PJMF600N65E1_T0_00001

PJMF600N65E1_T0_00001

650V SUPER JUNCITON MOSFET

Panjit International Inc.

3,240 -
PJMF600N65E1_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 700 V ±30V 554 pF @ 400 V - - ITO-220AB-F - 32W (Tc) -55°C ~ 150°C (TJ)
PJA3404-AU_R1_000A1

PJA3404-AU_R1_000A1

SOT-23, MOSFET

Panjit International Inc.

1 -
PJA3404-AU_R1_000A1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.6A (Ta) 4.5V, 10V 30mOhm @ 5.6A, 10V Surface Mount 2.1V @ 250µA 7.8 nC @ 10 V 30 V ±20V 343 pF @ 15 V AEC-Q101 - SOT-23 Automotive 1.25W (Ta) -55°C ~ 150°C (TJ)
PJE8438_R1_00001

PJE8438_R1_00001

50V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,041 -
PJE8438_R1_00001

数据表

- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 360mA (Ta) 1.8V, 10V 1.45Ohm @ 500mA, 10V Surface Mount 1V @ 250µA 0.95 nC @ 4.5 V 50 V ±20V 36 pF @ 25 V - - SOT-523 - 300mW (Ta) -55°C ~ 150°C (TJ)
PJA3461S-AU_R1_007A1

PJA3461S-AU_R1_007A1

60V P-Channel Enhance Mode MSFT

Panjit International Inc.

6,331 -
PJA3461S-AU_R1_007A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ44611AP-AU_R2_002A1

PJQ44611AP-AU_R2_002A1

60V P-Channel Enhance Mode MSFT

Panjit International Inc.

6,359 -
PJQ44611AP-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJD13N10A_L2_00001

PJD13N10A_L2_00001

100V N-CHANNEL MOSFET

Panjit International Inc.

2,704 -
PJD13N10A_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.9A (Ta), 13A (Tc) 4.5V, 10V 115mOhm @ 6.5A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 100 V ±20V 1413 pF @ 25 V - - TO-252AA - 2W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
PJL9433A_R2_00001

PJL9433A_R2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,444 -
PJL9433A_R2_00001

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.2A (Ta) 4.5V, 10V 110mOhm @ 3.2A, 10V Surface Mount 2.5V @ 250µA 10 nC @ 10 V 60 V ±20V 785 pF @ 30 V - - 8-SOP - 2.5W (Ta) -55°C ~ 150°C (TJ)
PJQ44609AP-AU_R2_002A1

PJQ44609AP-AU_R2_002A1

60V P-Channel Enhance Mode MSFT

Panjit International Inc.

7,783 -
PJQ44609AP-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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