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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJMF380N65E1_T0_00001

PJMF380N65E1_T0_00001

650V/ 380MOHM SUPER JUNCTION EAS

Panjit International Inc.

1,995 -
PJMF380N65E1_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V Through Hole 4V @ 250µA 22 nC @ 10 V 650 V ±30V 769 pF @ 400 V - - ITO-220AB-F - 33W (Tc) -55°C ~ 150°C (TJ)
PJMB390N65EC_R2_00601

PJMB390N65EC_R2_00601

650V/ 390MOHM / 10A/ EASY TO DRI

Panjit International Inc.

587 -
PJMB390N65EC_R2_00601

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 390mOhm @ 5A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 650 V ±30V 726 pF @ 400 V - - TO-263 - 87.5W (Tc) -55°C ~ 150°C (TJ)
PSMB032N08NS1_R2_00601

PSMB032N08NS1_R2_00601

80V/ 3.4MOHM / MV MOSFET

Panjit International Inc.

770 -
PSMB032N08NS1_R2_00601

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 161A (Tc) 7V, 10V 3.4mOhm @ 50A, 10V Surface Mount 3.75V @ 250µA 76 nC @ 7 V 80 V ±20V 7430 pF @ 40 V - - TO-263 - 156W (Tc) -55°C ~ 150°C (TJ)
PJMF280N60E1_T0_00001

PJMF280N60E1_T0_00001

600V SUPER JUNCITON MOSFET

Panjit International Inc.

1,966 -
PJMF280N60E1_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 27 nC @ 10 V 600 V ±30V 926 pF @ 400 V - - ITO-220AB-F - 34W (Tc) -55°C ~ 150°C (TJ)
PSMQC040N10NS2_R2_00601

PSMQC040N10NS2_R2_00601

100V/ 4.4MOHM/ EXCELLECT LOW FOM

Panjit International Inc.

5,941 -
PSMQC040N10NS2_R2_00601

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJMH190N60E1_T0_00601

PJMH190N60E1_T0_00601

600V/ 190MOHM / 20.6A/ EASY TO D

Panjit International Inc.

1,399 -
PJMH190N60E1_T0_00601

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20.6A (Tc) 10V 180mOhm @ 9.5A, 10V Through Hole 3.8V @ 250µA 40 nC @ 10 V 600 V ±30V 1410 pF @ 400 V - - TO-247AD - 160W (Tc) -55°C ~ 150°C (TJ)
PJA3432-AU_R1_000A1

PJA3432-AU_R1_000A1

SOT-23, MOSFET

Panjit International Inc.

522 -
PJA3432-AU_R1_000A1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.6A (Ta) 1.8V, 4.5V 200mOhm @ 1.6A, 4.5V Surface Mount 1.3V @ 250µA 1.5 nC @ 4.5 V 30 V ±8V 93 pF @ 15 V AEC-Q101 - SOT-23 Automotive 1.25W (Ta) -55°C ~ 150°C (TJ)
PJC7401_R1_00001

PJC7401_R1_00001

SOT-323, MOSFET

Panjit International Inc.

200 -
PJC7401_R1_00001

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 2.5V, 10V 115mOhm @ 1.5A, 10V Surface Mount 1.3V @ 250µA 11 nC @ 10 V 30 V ±12V 443 pF @ 15 V - - SOT-323 - 350mW (Ta) -55°C ~ 150°C (TJ)
PJW4P06A-AU_R2_000A1

PJW4P06A-AU_R2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

146 -
PJW4P06A-AU_R2_000A1

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 4.5V, 10V 110mOhm @ 4A, 10V Surface Mount 2.5V @ 250µA 10 nC @ 10 V 60 V ±20V 785 pF @ 30 V AEC-Q101 - SOT-223 Automotive 3.1W (Ta) -55°C ~ 150°C (TJ)
PJA3431_R1_00001

PJA3431_R1_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

724 -
PJA3431_R1_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 1.8V, 4.5V 325mOhm @ 1.5A, 4.5V Surface Mount 1V @ 250µA 1.7 nC @ 4.5 V 20 V ±8V 165 pF @ 10 V - - SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
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