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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJP10NA80_T0_00001

PJP10NA80_T0_00001

800V N-CHANNEL MOSFET

Panjit International Inc.

6,194 -
PJP10NA80_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 1.15Ohm @ 5A, 10V Through Hole 4V @ 250µA 31 nC @ 10 V 800 V ±30V 1517 pF @ 25 V - - TO-220AB - 180W (Tc) -55°C ~ 150°C (TJ)
PJP9NA90_T0_00001

PJP9NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.

5,762 -
PJP9NA90_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 10V 1.4Ohm @ 4.5A, 10V Through Hole 4V @ 250µA 31 nC @ 10 V 900 V ±30V 1634 pF @ 25 V - - TO-220AB - 205W (Tc) -55°C ~ 150°C (TJ)
PJQ5444_R2_00001

PJQ5444_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,306 -
PJQ5444_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12.7A (Ta), 70A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 4.5 V 40 V ±20V 1759 pF @ 25 V - - DFN5060-8 - 2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
PJL9421_R2_00001

PJL9421_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,890 -
PJL9421_R2_00001

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.8A (Ta) 4.5V, 10V 17mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 19 nC @ 4.5 V 40 V ±20V 2030 pF @ 25 V - - 8-SOP - 2.1W (Ta) -55°C ~ 150°C (TJ)
PSMN015N10NS2_R2_00201

PSMN015N10NS2_R2_00201

100V/ 1.5M / TOLL FOR ESS/ BBU/

Panjit International Inc.

1,484 -
PSMN015N10NS2_R2_00201

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 395A 4.5V, 10V - Surface Mount - 128 nC @ 10 V 100 V ±20V - - - TOLL - - -
PJMP099N60EC_T0_00601

PJMP099N60EC_T0_00601

600V/ 99M / 39A/ EASY TO DRIVER

Panjit International Inc.

2,000 -
PJMP099N60EC_T0_00601

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 39A (Tc) 10V 99mOhm @ 19.5A, 10V Through Hole 4V @ 250µA 60 nC @ 10 V 600 V ±30V 2568 pF @ 400 V - - TO-220AB-L - 308W (Tc) -55°C ~ 150°C (TJ)
PJMF099N60EC_T0_00601

PJMF099N60EC_T0_00601

600V/ 99M / 39A/ EASY TO DRIVER

Panjit International Inc.

2,000 -
PJMF099N60EC_T0_00601

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 39A (Tc) 10V 99mOhm @ 19.5A, 10V Through Hole 4V @ 250µA 60 nC @ 10 V 650 V ±30V 2568 pF @ 400 V - - ITO-220AB-F - 34W (Tc) -55°C ~ 150°C (TJ)
PJMH074N60FRCH_T0_00601

PJMH074N60FRCH_T0_00601

600V/ 74M / 53A/ FAST RECOVERY Q

Panjit International Inc.

1,491 -
PJMH074N60FRCH_T0_00601

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 53A 10V - Through Hole - 84 nC @ 10 V 600 V ±30V - - - TO-247AD - - -
PJMK074N60FRCH_T0_00201

PJMK074N60FRCH_T0_00201

600V/ 74M / 53A/ FAST RECOVERY Q

Panjit International Inc.

1,500 -
PJMK074N60FRCH_T0_00201

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
PJD12P06_L2_00001

PJD12P06_L2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,842 -
PJD12P06_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.6A (Ta), 12A (Tc) 10V 155mOhm @ 6A, 10V Surface Mount 4V @ 250µA 10.9 nC @ 10 V 60 V ±20V 385 pF @ 25 V - - TO-252AA - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
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