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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI7601DN-T1-GE3

SI7601DN-T1-GE3

MOSFET P-CH 20V 16A PPAK1212-8

Vishay Siliconix

7,232 -
SI7601DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16A (Tc) 2.5V, 4.5V 19.2mOhm @ 11A, 4.5V Surface Mount 1.6V @ 250µA 27 nC @ 5 V 20 V ±12V 1870 pF @ 10 V - - PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ)
SI7601DN-T1-E3

SI7601DN-T1-E3

MOSFET P-CH 20V 16A PPAK1212-8

Vishay Siliconix

9,569 -
SI7601DN-T1-E3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16A (Tc) 2.5V, 4.5V 19.2mOhm @ 11A, 4.5V Surface Mount 1.6V @ 250µA 27 nC @ 5 V 20 V ±12V 1870 pF @ 10 V - - PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ)
DMTH10H030LK3-13

DMTH10H030LK3-13

MOSFET N-CH 100V 28A TO252

Diodes Incorporated

8,146 -
DMTH10H030LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 6V, 10V 30mOhm @ 20A, 10V Surface Mount 3.5V @ 250µA 33.3 nC @ 10 V 100 V ±20V 1871 pF @ 50 V AEC-Q101 - TO-252-3 Automotive 2.1W (Ta) -55°C ~ 175°C (TJ)
DMTH43M8LFVWQ-13

DMTH43M8LFVWQ-13

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

2,026 -
DMTH43M8LFVWQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23A (Ta), 96A (Tc) 4.5V, 10V 4.3mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 36.9 nC @ 10 V 40 V ±20V 2737 pF @ 20 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 3.6W (Ta), 65W (Tc) -55°C ~ 175°C (TJ)
DMT10H009SCG-7

DMT10H009SCG-7

MOSFET BVDSS: 61V~100V V-DFN3333

Diodes Incorporated

7,694 -
DMT10H009SCG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 48A (Tc) 10V 9.5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 100 V ±20V 2085 pF @ 50 V - - V-DFN3333-8 (Type B) - 1.3W (Ta) -55°C ~ 150°C (TJ)
TP65H150LSG

TP65H150LSG

GANFET N-CH 650V 15A 3PQFN

Transphorm

3,151 -
TP65H150LSG

数据表

- 3-PowerDFN Tube Obsolete N-Channel GaNFET (Gallium Nitride) 15A (Tc) 10V 180mOhm @ 10A, 10V Surface Mount 4.8V @ 500µA 7.1 nC @ 10 V 650 V ±20V 576 pF @ 400 V - - 3-PQFN (8x8) - 69W (Tc) -55°C ~ 150°C (TJ)
MSJW20N65-BP

MSJW20N65-BP

MOSFET N-CH TO247

Micro Commercial Co

5,977 -
MSJW20N65-BP

数据表

- TO-247-3 Tube Obsolete - - 20A (Tc) - - Through Hole - - - ±30V - - - TO-247-3 - - -
NVD360N65S3

NVD360N65S3

MOSFET N-CH 600V DPAK

onsemi

2,432 -
NVD360N65S3

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - AEC-Q101 - - Automotive - -
BSC0804LSATMA1

BSC0804LSATMA1

MOSFET N-CH 100V 40A TDSON-8-6

Infineon Technologies

8,230 -
BSC0804LSATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 9.6mOhm @ 20A, 10V Surface Mount 2.3V @ 36µA 14.6 nC @ 4.5 V 100 V ±20V 2100 pF @ 50 V - - PG-TDSON-8-6 - 83W (Tc) -55°C ~ 175°C (TJ)
BSC014N06LS5ATMA1

BSC014N06LS5ATMA1

MOSFET 60V TDSON-8-7

Infineon Technologies

7,855 -
BSC014N06LS5ATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active - MOSFET (Metal Oxide) - - - Surface Mount - - 60 V - - - - PG-TDSON-8-7 - - -
IRFP450PBF

IRFP450PBF

MOSFET N-CH 500V 14A TO247AC

Infineon Technologies

4,587 -
IRFP450PBF

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 400mOhm @ 8.4A, 10V Through Hole 4V @ 250µA 150 nC @ 10 V 500 V ±20V 2600 pF @ 25 V - - TO-247AC - 190W (Tc) -55°C ~ 150°C (TJ)
FDZ372NZ

FDZ372NZ

MOSFET N-CH 20V 4.7A 4WLCSP

Fairchild Semiconductor

5,368 -
FDZ372NZ

数据表

PowerTrench® 4-XFBGA, WLCSP Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4.7A (Ta) - 50mOhm @ 2A, 4.5V Surface Mount 1V @ 250µA 9.8 nC @ 4.5 V 20 V - 685 pF @ 10 V - - 4-WLCSP (1x1) - 1.7W (Ta) -55°C ~ 150°C (TJ)
IRF8113GPBF

IRF8113GPBF

MOSFET N-CH 30V 17.2A 8SO

International Rectifier

3,080 -
IRF8113GPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V Surface Mount 2.2V @ 250µA 36 nC @ 4.5 V 30 V ±20V 2910 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
FQP16N25C

FQP16N25C

MOSFET N-CH 250V 15.6A TO220-3

Fairchild Semiconductor

5,299 -
FQP16N25C

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 15.6A (Tc) 10V 270mOhm @ 7.8A, 10V Through Hole 4V @ 250µA 53.5 nC @ 10 V 250 V ±30V 1080 pF @ 25 V - - TO-220-3 - 139W (Tc) -55°C ~ 150°C (TJ)
IRF530

IRF530

MOSFET N-CH 100V 14A TO220AB

onsemi

7,253 -
IRF530

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 160mOhm @ 8.4A, 10V Through Hole 4V @ 250µA 26 nC @ 10 V 100 V ±20V 670 pF @ 25 V - - TO-220AB - 88W (Tc) -55°C ~ 175°C (TJ)
FDG326P

FDG326P

MOSFET P-CH 20V 1.5A SC88

Fairchild Semiconductor

2,368 -
FDG326P

数据表

PowerTrench® 6-TSSOP, SC-88, SOT-363 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 1.8V, 4.5V 140mOhm @ 1.5A, 4.5V Surface Mount 1.5V @ 250µA 7 nC @ 4.5 V 20 V ±8V 467 pF @ 10 V - - SC-88 (SC-70-6) - 750mW (Ta) -55°C ~ 150°C (TJ)
FDC633N

FDC633N

MOSFET N-CH 30V 5.2A SUPERSOT6

Fairchild Semiconductor

4,083 -
FDC633N

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5.2A (Ta) 2.5V, 4.5V 42mOhm @ 5.2A, 4.5V Surface Mount 1V @ 250µA 16 nC @ 4.5 V 30 V ±8V 538 pF @ 10 V - - SuperSOT™-6 - 1.6W (Ta) -55°C ~ 150°C (TJ)
FDH50N50

FDH50N50

MOSFET N-CH 500V 48A TO247-3

Fairchild Semiconductor

3,312 -
FDH50N50

数据表

UniFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 10V 105mOhm @ 24A, 10V Through Hole 5V @ 250µA 137 nC @ 10 V 500 V ±30V 6460 pF @ 25 V - - TO-247 - 625W (Tc) -55°C ~ 150°C (TJ)
RFD16N05

RFD16N05

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,312 -
RFD16N05

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 47mOhm @ 16A, 10V Through Hole 4V @ 250µA 80 nC @ 20 V 50 V ±20V 900 pF @ 25 V - - IPAK - 72W (Tc) -55°C ~ 175°C (TJ)
FQPF7N20

FQPF7N20

MOSFET N-CH 200V 4.8A TO220F

onsemi

6,389 -
FQPF7N20

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.8A (Tc) 10V 690mOhm @ 2.4A, 10V Through Hole 5V @ 250µA 10 nC @ 10 V 200 V ±30V 400 pF @ 25 V - - TO-220F-3 - 37W (Tc) -55°C ~ 150°C (TJ)
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