| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTMTS1D6N10MCTXGSINGLE N-CHANNEL POWER MOSFET 10 onsemi |
2,873 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 36A (Ta), 273A (Tc) | 10V | 1.7mOhm @ 90A, 10V | Surface Mount | 4V @ 650µA | 106 nC @ 10 V | 100 V | ±20V | 7630 pF @ 50 V | - | - | 8-DFNW (8.3x8.4) | - | 5W (Ta), 291W (Tc) | -55°C ~ 175°C (TJ) |
|
NTBG060N065SC1SILICON CARBIDE (SIC) MOSFET - 4 onsemi |
708 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 46A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | Surface Mount | 4.3V @ 6.5mA | 74 nC @ 18 V | 650 V | +22V, -8V | 1473 pF @ 325 V | - | - | D2PAK-7 | - | 170W (Tc) | -55°C ~ 175°C (TJ) |
|
FCH077N65F-F085MOSFET N-CH 650V 54A TO247-3 onsemi |
854 | - |
|
数据表 |
SuperFET® II | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 54A (Tc) | 10V | 77mOhm @ 27A, 10V | Through Hole | 5V @ 250µA | 164 nC @ 10 V | 650 V | ±20V | 7162 pF @ 25 V | AEC-Q101 | - | TO-247-3 | Automotive | 481W (Tc) | -55°C ~ 150°C (TJ) |
|
NVBG095N065SC1SIC MOS D2PAK-7L 650V onsemi |
755 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 30A (Tc) | 15V, 18V | 105mOhm @ 12A, 18V | Surface Mount | 4.3V @ 4mA | 50 nC @ 18 V | 650 V | - | 956 pF @ 325 V | AEC-Q101 | - | D2PAK-7 | Automotive | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
NTP22N06LMOSFET N-CH 60V 22A TO220AB onsemi |
2,136 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Ta) | 5V | 65mOhm @ 11A, 5V | Through Hole | 2V @ 250µA | 20 nC @ 5 V | 60 V | ±10V | 690 pF @ 25 V | - | - | TO-220 | - | 60W (Tj) | -55°C ~ 175°C (TJ) |
|
NTP22N06MOSFET N-CH 60V 22A TO220AB onsemi |
7,764 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Ta) | 10V | 60mOhm @ 11A, 10V | Through Hole | 4V @ 250µA | 32 nC @ 10 V | 60 V | ±20V | 700 pF @ 25 V | - | - | TO-220 | - | 60W (Tj) | -55°C ~ 175°C (TJ) |
|
HUF76419S3SMOSFET N-CH 60V 29A D2PAK onsemi |
4,614 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | Surface Mount | 3V @ 250µA | 28 nC @ 10 V | 60 V | ±16V | 900 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
FQD3P50TFMOSFET P-CH 500V 2.1A DPAK onsemi |
7,639 | - |
|
数据表 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.1A (Tc) | 10V | 4.9Ohm @ 1.05A, 10V | Surface Mount | 5V @ 250µA | 23 nC @ 10 V | 500 V | ±30V | 660 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
|
FDP5N50NZMOSFET N-CH 500V 4.5A TO220-3 onsemi |
4,613 | - |
|
数据表 |
UniFET-II™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 1.5Ohm @ 2.25A, 10V | Through Hole | 5V @ 250µA | 12 nC @ 10 V | 500 V | ±25V | 440 pF @ 25 V | - | - | TO-220-3 | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
FDZ4670MOSFET N-CH 30V 25A 20FLFBGA onsemi |
7,384 | - |
|
数据表 |
PowerTrench® | 30-WFBGA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Ta) | 4.5V, 10V | 2.5mOhm @ 25A, 10V | Surface Mount | 3V @ 250µA | 56 nC @ 10 V | 30 V | ±20V | 3540 pF @ 15 V | - | - | 30-FLFBGA (3.55x4) | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |