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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
UPA2754GR(0)-E1-AY

UPA2754GR(0)-E1-AY

TRANSISTOR

Renesas Electronics Corporation

3,440 -
UPA2754GR(0)-E1-AY

数据表

- - Tape & Reel (TR) Obsolete - - 11A (Tj) - - - - - - - - - - - - - -
UPA2792GR(0)-E1-AZ

UPA2792GR(0)-E1-AZ

TRANSISTOR

Renesas Electronics Corporation

7,250 -
UPA2792GR(0)-E1-AZ

数据表

- - Tape & Reel (TR) Obsolete - - 10A (Tj) - - - - - - - - - - - - - -
UPA2794GR(0)-E1-AZ

UPA2794GR(0)-E1-AZ

TRANSISTOR

Renesas Electronics Corporation

7,931 -
UPA2794GR(0)-E1-AZ

数据表

- - Tape & Reel (TR) Obsolete - - 5.5A (Tj) - - - - - - - - - - - - - -
CTLDM8002A-M621 TR

CTLDM8002A-M621 TR

MOSFET P-CH 50V 280MA TLM621

Central Semiconductor Corp

7,906 -
CTLDM8002A-M621 TR

数据表

- 6-PowerVFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 280mA (Ta) 5V, 10V 2.5Ohm @ 500mA, 10V Surface Mount 2.5V @ 250µA 0.72 nC @ 4.5 V 50 V 20V 70 pF @ 25 V - - TLM621 - 900mW (Ta) -65°C ~ 150°C (TJ)
CTLDM8002A-M621H BK

CTLDM8002A-M621H BK

MOSFET P-CH 50V 280MA TLM621H

Central Semiconductor Corp

5,737 -
CTLDM8002A-M621H BK

数据表

- 6-XFDFN Exposed Pad Bulk Obsolete P-Channel MOSFET (Metal Oxide) 280mA (Ta) 5V, 10V 2.5Ohm @ 500mA, 10V Surface Mount 2.5V @ 250µA 0.72 nC @ 4.5 V 50 V 20V 70 pF @ 25 V - - TLM621H - 1.6W (Ta) -65°C ~ 150°C (TJ)
TSM1NB60SCT A3

TSM1NB60SCT A3

MOSFET N-CH 600V 500MA TO92

Taiwan Semiconductor Corporation

2,967 -
TSM1NB60SCT A3

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) 10V 10Ohm @ 250mA, 10V Through Hole 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - TO-92 - 2.5W (Tc) -55°C ~ 150°C (TJ)
TSM4425CS RLG

TSM4425CS RLG

MOSFET P-CH 30V 11A 8SOP

Taiwan Semiconductor Corporation

3,623 -
TSM4425CS RLG

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 11A (Tc) 4.5V, 10V 12mOhm @ 11A, 10V Surface Mount 3V @ 250µA 64 nC @ 10 V 30 V ±20V 3680 pF @ 8 V - - 8-SOP - 2.5W (Ta) -55°C ~ 150°C (TJ)
TSM1NB60SCT B0

TSM1NB60SCT B0

MOSFET N-CH 600V 500MA TO92

Taiwan Semiconductor Corporation

7,217 -
TSM1NB60SCT B0

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) 10V 10Ohm @ 250mA, 10V Through Hole 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - TO-92 - 2.5W (Tc) -55°C ~ 150°C (TJ)
TSM8N70CI C0

TSM8N70CI C0

MOSFET N-CH 700V 8A ITO220AB

Taiwan Semiconductor Corporation

7,214 -
TSM8N70CI C0

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 900mOhm @ 4A, 10V Through Hole 4V @ 250µA 32 nC @ 10 V 700 V ±30V 2006 pF @ 25 V - - ITO-220AB - 40W (Tc) 150°C (TJ)
FK4B01110L1

FK4B01110L1

MOSFET N-CH 12V 2.3A ALGA004

Panasonic Electronic Components

4,421 -
FK4B01110L1

数据表

- 4-XFLGA, CSP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.3A (Ta) 1.5V, 4.5V 64mOhm @ 1.5A, 4.5V Surface Mount 1V @ 118µA 2.55 nC @ 4.5 V 12 V ±8V 274 pF @ 10 V - - ALGA004-W-0606-RA01 - 340mW (Ta) -40°C ~ 85°C (TA)
PHD9NQ20T,118

PHD9NQ20T,118

MOSFET N-CH 200V 8.7A DPAK

Nexperia USA Inc.

2,630 -
PHD9NQ20T,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 400mOhm @ 4.5A, 10V Surface Mount 4V @ 1mA 24 nC @ 10 V 200 V ±30V 959 pF @ 25 V - - DPAK - 88W (Tc) -55°C ~ 175°C (TJ)
DMTH6009LPSQ-13

DMTH6009LPSQ-13

MOSFET N-CH 60V PWRDI5060

Diodes Incorporated

3,720 -
DMTH6009LPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.76A (Ta), 89.5A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V Surface Mount 2V @ 250µA 33.5 nC @ 10 V 60 V ±16V 1925 pF @ 30 V AEC-Q101 - PowerDI5060-8 Automotive 2.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
FK4B01100L1

FK4B01100L1

MOSFET N-CH 12V 3.4A XLGA004

Panasonic Electronic Components

6,465 -
FK4B01100L1

数据表

- 4-XFLGA, CSP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.4A (Ta) 1.5V, 4.5V 30mOhm @ 1.5A, 4.5V Surface Mount 1V @ 236µA 5.8 nC @ 4.5 V 12 V ±8V 275 pF @ 10 V - - XLGA004-W-0808-RA01 - 360mW (Ta) -40°C ~ 85°C (TA)
TSM4NB60CZ C0G

TSM4NB60CZ C0G

MOSFET N-CHANNEL 600V 4A TO220

Taiwan Semiconductor Corporation

8,708 -
TSM4NB60CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.5Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 14.5 nC @ 10 V 600 V ±30V 500 pF @ 25 V - - TO-220 - 50W (Tc) -55°C ~ 150°C (TJ)
IRF5800TR

IRF5800TR

MOSFET P-CH 30V 4A MICRO6

Infineon Technologies

6,381 -
IRF5800TR

数据表

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4A (Ta) 4.5V, 10V 85mOhm @ 4A, 10V Surface Mount 1V @ 250µA 17 nC @ 10 V 30 V ±20V 535 pF @ 25 V - - Micro6™(TSOP-6) - 2W (Ta) -55°C ~ 150°C (TJ)
FQP9N15

FQP9N15

MOSFET N-CH 150V 9A TO220-3

onsemi

3,784 -
FQP9N15

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 400mOhm @ 4.5A, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 150 V ±25V 410 pF @ 25 V - - TO-220-3 - 75W (Tc) -55°C ~ 175°C (TJ)
SPD25N06S2-40

SPD25N06S2-40

MOSFET N-CH 55V 29A TO252-3

Infineon Technologies

5,775 -
SPD25N06S2-40

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 40mOhm @ 13A, 10V Surface Mount 4V @ 26µA 18 nC @ 10 V 55 V ±20V 710 pF @ 25 V - - PG-TO252-3-11 - 68W (Tc) -55°C ~ 175°C (TJ)
SPD26N06S2L-35

SPD26N06S2L-35

MOSFET N-CH 55V 30A TO252-3

Infineon Technologies

7,525 -
SPD26N06S2L-35

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 35mOhm @ 13A, 10V Surface Mount 2V @ 26µA 24 nC @ 10 V 55 V ±20V 790 pF @ 25 V - - PG-TO252-3-11 - 68W (Tc) -55°C ~ 175°C (TJ)
FQD4N50TM_WS

FQD4N50TM_WS

MOSFET N-CH 500V 2.6A DPAK

onsemi

2,299 -
FQD4N50TM_WS

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 2.7Ohm @ 1.3A, 10V Surface Mount 5V @ 250µA 13 nC @ 10 V 500 V ±30V 460 pF @ 25 V - - TO-252AA - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
FJ4B01110L1

FJ4B01110L1

MOSFET P-CH 12V 1.4A ALGA004

Panasonic Electronic Components

9,063 -
FJ4B01110L1

数据表

- 4-XFLGA, CSP Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.4A (Ta) 1.5V, 4.5V 153mOhm @ 700mA, 4.5V Surface Mount 1V @ 598µA 3.3 nC @ 4.5 V 12 V ±8V 226 pF @ 10 V - - ALGA004-W-0606-RA01 - 340mW (Ta) -40°C ~ 85°C (TA)
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