富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SK3755-AZ

2SK3755-AZ

TRANSISTOR

Renesas Electronics Corporation

3,414 -
2SK3755-AZ

数据表

- - Tape & Reel (TR) Obsolete - - 45A (Tc) - - - - - - - - - - - - - -
2SK3813-Z-E1-AZ

2SK3813-Z-E1-AZ

TRANSISTOR

Renesas Electronics Corporation

6,848 -
2SK3813-Z-E1-AZ

数据表

- - Tape & Reel (TR) Obsolete - - 60A (Tc) - - - - - - - - - - - - - -
2SK3814(0)-Z-E1-AZ

2SK3814(0)-Z-E1-AZ

TRANSISTOR

Renesas Electronics Corporation

5,996 -
2SK3814(0)-Z-E1-AZ

数据表

- - Tape & Reel (TR) Obsolete - - 60A (Tc) - - - - - - - - - - - - - -
2SK3814(0)-Z-E2-AZ

2SK3814(0)-Z-E2-AZ

TRANSISTOR

Renesas Electronics Corporation

7,437 -
2SK3814(0)-Z-E2-AZ

数据表

- - Tape & Reel (TR) Obsolete - - 60A (Tc) - - - - - - - - - - - - - -
2SK3899(0)-ZK-E1-AZ

2SK3899(0)-ZK-E1-AZ

TRANSISTOR

Renesas Electronics Corporation

9,197 -
2SK3899(0)-ZK-E1-AZ

数据表

- - Tape & Reel (TR) Obsolete - - 84A (Tc) - - - - - - - - - - - - - -
2SK3899(01)-ZK-E1-AY

2SK3899(01)-ZK-E1-AY

TRANSISTOR

Renesas Electronics Corporation

5,676 -
2SK3899(01)-ZK-E1-AY

数据表

- - Tape & Reel (TR) Obsolete - - 50A (Tc) - - - - - - - - - - - - - -
2SK3901(0)-ZK-E1-AY

2SK3901(0)-ZK-E1-AY

TRANSISTOR

Renesas Electronics Corporation

6,787 -
2SK3901(0)-ZK-E1-AY

数据表

- - Tape & Reel (TR) Obsolete - - 60A (Tc) - - - - - - - - - - - - - -
2SK3902(0)-ZK-E1-AY

2SK3902(0)-ZK-E1-AY

TRANSISTOR

Renesas Electronics Corporation

6,910 -
2SK3902(0)-ZK-E1-AY

数据表

- - Tape & Reel (TR) Obsolete - - 30A (Tc) - - - - - - - - - - - - - -
N0300P-T1B-AT

N0300P-T1B-AT

TRANSISTOR

Renesas Electronics Corporation

4,190 -
N0300P-T1B-AT

数据表

- - Tape & Reel (TR) Obsolete - - 4.5A (Tj) - - - - - - - - - - - - - -
N0302P-T1-AT

N0302P-T1-AT

TRANSISTOR

Renesas Electronics Corporation

6,219 -
N0302P-T1-AT

数据表

- - Tape & Reel (TR) Obsolete - - 4.4A (Tj) - - - - - - - - - - - - - -
NP109N04PUJ-E2B-AY

NP109N04PUJ-E2B-AY

TRANSISTOR

Renesas Electronics Corporation

8,527 -
NP109N04PUJ-E2B-AY

数据表

- - Tape & Reel (TR) Obsolete - - 110A (Ta) - - - - - - - - - - - - - -
SI2341DS-T1-E3

SI2341DS-T1-E3

MOSFET P-CH 30V 2.5A SOT23-3

Vishay Siliconix

7,960 -
SI2341DS-T1-E3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 72mOhm @ 2.8A, 10V Surface Mount 3V @ 250µA 15 nC @ 10 V 30 V ±20V 400 pF @ 15 V - - SOT-23-3 (TO-236) - 710mW (Ta) -55°C ~ 150°C (TJ)
SI2341DS-T1-GE3

SI2341DS-T1-GE3

MOSFET P-CH 30V 2.5A SOT23-3

Vishay Siliconix

3,167 -
SI2341DS-T1-GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 72mOhm @ 2.8A, 10V Surface Mount 3V @ 250µA 15 nC @ 10 V 30 V ±20V 400 pF @ 15 V - - SOT-23-3 (TO-236) - 710mW (Ta) -55°C ~ 150°C (TJ)
SISA66DN-T1-GE3

SISA66DN-T1-GE3

MOSFET N-CH 30V 40A PPAK1212-8

Vishay Siliconix

5,956 -
SISA66DN-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V Surface Mount 2.2V @ 1mA 66 nC @ 10 V 30 V +20V, -16V 3014 pF @ 15 V - - PowerPAK® 1212-8 - 52W (Tc) -55°C ~ 150°C (TJ)
MCG18P06YHE3-TP

MCG18P06YHE3-TP

POWER MOSFET

Micro Commercial Co

2,278 -
MCG18P06YHE3-TP

数据表

- 8-PowerVDFN Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 45mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 14.1 nC @ 10 V 60 V ±20V 830 pF @ 25 V AEC-Q101 - PDFN3333 Automotive 42W (Tj) -55°C ~ 150°C (TJ)
BSZ0502NSIATMA1

BSZ0502NSIATMA1

MOSFET N-CH 30V 22A/40A TSDSON

Infineon Technologies

7,522 -
BSZ0502NSIATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 40A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V Surface Mount 2V @ 250µA 26 nC @ 10 V 30 V ±20V 1600 pF @ 15 V - - PG-TSDSON-8-FL - 2.1W (Ta), 43W (Tc) -55°C ~ 150°C (TJ)
ZVN2535ASTZ

ZVN2535ASTZ

MOSFET N-CH 350V 90MA E-LINE

Diodes Incorporated

4,776 -
ZVN2535ASTZ

数据表

- E-Line-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90mA (Ta) 10V 35Ohm @ 100mA, 10V Through Hole 3V @ 1mA - 350 V ±20V 70 pF @ 25 V - - E-Line (TO-92 compatible) - 700mW (Ta) -55°C ~ 150°C (TJ)
IRF7821PBF

IRF7821PBF

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies

7,316 -
IRF7821PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V Surface Mount 1V @ 250µA 14 nC @ 4.5 V 30 V ±20V 1010 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 155°C (TJ)
TSM6N50CH C5G

TSM6N50CH C5G

MOSFET N-CH 500V 5.6A TO251

Taiwan Semiconductor Corporation

4,252 -
TSM6N50CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.6A (Ta) 10V 1.4Ohm @ 2.8A, 10V Through Hole 4V @ 250µA 25 nC @ 10 V 500 V ±30V 900 pF @ 25 V - - TO-251 (IPAK) - 90W (Tc) 150°C (TJ)
FQPF17N08

FQPF17N08

MOSFET N-CH 80V 11.2A TO220F

onsemi

5,311 -
FQPF17N08

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11.2A (Tc) 10V 115mOhm @ 5.6A, 10V Through Hole 4V @ 250µA 15 nC @ 10 V 80 V ±25V 450 pF @ 25 V - - TO-220F-3 - 30W (Tc) -55°C ~ 175°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户