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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMPB13XNE,115MOSFET N-CH 30V 8A DFN2020MD-6 NXP USA Inc. |
6,716 | - |
|
数据表 |
- | 6-XFDFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Ta) | 1.8V, 4.5V | 16mOhm @ 8A, 4.5V | Surface Mount | 900mV @ 250µA | 36 nC @ 4.5 V | 30 V | ±12V | 2195 pF @ 15 V | - | - | DFN1010B-6 | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
PMPB33XN,115MOSFET N-CH 30V 4.3A DFN2020MD-6 NXP USA Inc. |
3,235 | - |
|
数据表 |
- | 6-XFDFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 4.3A (Ta) | 2.5V, 4.5V | 47mOhm @ 4.3A, 4.5V | Surface Mount | 1.2V @ 250µA | 7.6 nC @ 4.5 V | 30 V | ±12V | 505 pF @ 15 V | - | - | DFN1010B-6 | - | 1.5W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) |
|
PSMN5R0-100PS,127NOW NEXPERIA PSMN5R0-100PS - 120 NXP Semiconductors |
8,850 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 5mOhm @ 25A, 10V | Through Hole | 4V @ 1mA | 170 nC @ 10 V | 100 V | ±20V | 9900 pF @ 50 V | - | - | TO-220AB | - | 338W (Tc) | -55°C ~ 175°C (TJ) |
|
BSH112,235MOSFET N-CH 60V 300MA TO236AB NXP USA Inc. |
9,573 | - |
|
数据表 |
TrenchMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | Surface Mount | 2V @ 1mA | - | 60 V | ±15V | 40 pF @ 10 V | - | - | SOT-23 (TO-236AB) | - | 830mW (Tc) | -65°C ~ 150°C (TJ) |
|
PMR670UPE,115MOSFET P-CH 20V 480MA SC75 NXP USA Inc. |
3,889 | - |
|
数据表 |
- | SC-75, SOT-416 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 480mA (Ta) | 1.8V, 4.5V | 850mOhm @ 400mA, 4.5V | Surface Mount | 1.3V @ 250µA | 1.14 nC @ 4.5 V | 20 V | ±8V | 87 pF @ 10 V | - | - | SC-75 | - | 250mW (Ta), 770mW (Tc) | -55°C ~ 150°C (TJ) |
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|
BUK78150-55A,115MOSFET N-CH 55V 5.5A SOT223 NXP USA Inc. |
2,884 | - |
|
数据表 |
TrenchMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 150mOhm @ 5A, 10V | Surface Mount | 4V @ 1mA | - | 55 V | ±20V | 230 pF @ 25 V | AEC-Q101 | - | SC-73 | Automotive | 8W (Tc) | -55°C ~ 150°C (TJ) |
|
BUK98150-55A,135MOSFET N-CH 55V 5.5A SOT-223 NXP USA Inc. |
2,084 | - |
|
数据表 |
TrenchMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 4.5V, 10V | 137mOhm @ 5A, 10V | Surface Mount | 2V @ 1mA | 5.3 nC @ 5 V | 55 V | ±15V | 320 pF @ 25 V | AEC-Q101 | - | SC-73 | Automotive | 8W (Tc) | -55°C ~ 150°C (TJ) |
|
PH9930L,115MOSFET N-CH 30V 63A LFPAK56 NXP USA Inc. |
4,432 | - |
|
数据表 |
TrenchMOS™ | SC-100, SOT-669 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 63A (Tc) | 4.5V, 10V | 9.9mOhm @ 25A, 10V | Surface Mount | 2.15V @ 1mA | 13.3 nC @ 4.5 V | 30 V | ±20V | 1565 pF @ 12 V | - | - | LFPAK56, Power-SO8 | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
PH9030L,115MOSFET N-CH 30V 63A LFPAK56 NXP USA Inc. |
4,022 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 63A (Tc) | 4.5V, 10V | 9mOhm @ 25A, 10V | Surface Mount | 2V @ 1mA | 13.3 nC @ 4.5 V | 30 V | ±20V | 1565 pF @ 12 V | - | - | LFPAK56, Power-SO8 | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
PMV31XN,215MOSFET N-CH 20V 5.9A TO236AB NXP USA Inc. |
8,948 | - |
|
数据表 |
TrenchMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.9A (Tc) | 2.5V, 4.5V | 37mOhm @ 1.5A, 4.5V | Surface Mount | 1.5V @ 1mA | 5.8 nC @ 4.5 V | 20 V | ±12V | 410 pF @ 20 V | - | - | SOT-23 (TO-236AB) | - | 280mW (Tj) | -55°C ~ 150°C (TJ) |
