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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK9Y19-100E,115

BUK9Y19-100E,115

MOSFET N-CH 100V 56A LFPAK56

Nexperia USA Inc.

15,329 -
BUK9Y19-100E,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 5V 18mOhm @ 15A, 10V Surface Mount 2.1V @ 1mA 39 nC @ 5 V 100 V ±10V 5085 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 167W (Tc) -55°C ~ 175°C (TJ)
BUK7Y18-75B,115

BUK7Y18-75B,115

MOSFET N-CH 75V 49A LFPAK56

Nexperia USA Inc.

10,540 -
BUK7Y18-75B,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V 18mOhm @ 20A, 10V Surface Mount 4V @ 1mA 35 nC @ 10 V 75 V ±20V 2173 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 105W (Tc) -55°C ~ 175°C (TJ)
BUK7Y12-55B,115

BUK7Y12-55B,115

MOSFET N-CH 55V 61.8A LFPAK56

Nexperia USA Inc.

8,862 -
BUK7Y12-55B,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 61.8A (Tc) 10V 12mOhm @ 20A, 10V Surface Mount 4V @ 1mA 35.2 nC @ 10 V 55 V ±20V 2067 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 105W (Tc) -55°C ~ 175°C (TJ)
BUK9230-100B,118

BUK9230-100B,118

MOSFET N-CH 100V 47A DPAK

Nexperia USA Inc.

4,822 -
BUK9230-100B,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 5V, 10V 28mOhm @ 25A, 10V Surface Mount 2V @ 1mA 33 nC @ 5 V 100 V ±15V 3805 pF @ 25 V AEC-Q101 - DPAK Automotive 167W (Tc) -55°C ~ 185°C (TJ)
PSMN2R0-30YLDX

PSMN2R0-30YLDX

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

7,117 -
PSMN2R0-30YLDX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 46 nC @ 10 V 30 V ±20V 2969 pF @ 15 V - - LFPAK56, Power-SO8 - 142W (Tc) -55°C ~ 175°C (TJ)
PSMN015-100YLX

PSMN015-100YLX

MOSFET N-CH 100V 69A LFPAK56

Nexperia USA Inc.

2,556 -
PSMN015-100YLX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 69A (Tc) 5V, 10V 14.7mOhm @ 20A, 10V Surface Mount 2.1V @ 1mA 86.3 nC @ 10 V 100 V ±20V 6139 pF @ 25 V - - LFPAK56, Power-SO8 - 195W (Tc) -55°C ~ 175°C (TJ)
BUK9207-30B,118

BUK9207-30B,118

MOSFET N-CH 30V 75A DPAK

Nexperia USA Inc.

3,814 -
BUK9207-30B,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 5mOhm @ 25A, 10V Surface Mount 2V @ 1mA 31 nC @ 5 V 30 V ±15V 3430 pF @ 25 V AEC-Q101 - DPAK Automotive 167W (Tc) -55°C ~ 185°C (TJ)
PSMN3R2-40YLDX

PSMN3R2-40YLDX

MOSFET N-CH 40V 120A LFPAK56

Nexperia USA Inc.

2,828 -
PSMN3R2-40YLDX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 3.3mOhm @ 25A, 10V Surface Mount 2.05V @ 1mA 57 nC @ 10 V 40 V ±20V 4103 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 115W (Tc) -55°C ~ 175°C (TJ)
PSMN1R7-25YLDX

PSMN1R7-25YLDX

MOSFET N-CH 25V 100A LFPAK56

Nexperia USA Inc.

1,500 -
PSMN1R7-25YLDX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 1.7mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 46.7 nC @ 10 V 25 V ±20V 3415 pF @ 12 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 135W (Tc) -55°C ~ 175°C (TJ)
PHB27NQ10T,118

PHB27NQ10T,118

MOSFET N-CH 100V 28A D2PAK

Nexperia USA Inc.

2,587 -
PHB27NQ10T,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 50mOhm @ 14A, 10V Surface Mount 4V @ 1mA 30 nC @ 10 V 100 V ±20V 1240 pF @ 25 V - - D2PAK - 107W (Tc) -55°C ~ 175°C (TJ)
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