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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN5R3-25MLDX

PSMN5R3-25MLDX

MOSFET N-CH 25V 70A LFPAK33

Nexperia USA Inc.

1,500 -
PSMN5R3-25MLDX

数据表

- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 5.9mOhm @ 15A, 10V Surface Mount 2.2V @ 1mA 12.7 nC @ 10 V 25 V ±20V 858 pF @ 12 V - Schottky Diode (Body) LFPAK33 - 51W (Tc) -55°C ~ 175°C (TJ)
PSMN1R0-40ULDX

PSMN1R0-40ULDX

MOSFET N-CH 40V 280A LFPAK56

Nexperia USA Inc.

4,776 -
PSMN1R0-40ULDX

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 280A (Tc) - - Surface Mount - 127 nC @ 10 V 40 V ±20V - - - LFPAK56, Power-SO8 - 164W (Tc) 150°C (TJ)
BUK6213-30C,118

BUK6213-30C,118

MOSFET N-CH 30V 47A DPAK

Nexperia USA Inc.

3,620 -
BUK6213-30C,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 14mOhm @ 10A, 10V Surface Mount 2.8V @ 1mA 19.5 nC @ 10 V 30 V ±16V 1108 pF @ 25 V AEC-Q101 - DPAK Automotive 60W (Tc) -55°C ~ 175°C (TJ)
BUK6228-55C,118

BUK6228-55C,118

MOSFET N-CH 55V 31A DPAK

Nexperia USA Inc.

9,141 -
BUK6228-55C,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 29mOhm @ 10A, 10V Surface Mount 2.8V @ 1mA 20.2 nC @ 10 V 55 V ±16V 1340 pF @ 25 V AEC-Q101 - DPAK Automotive 60W (Tc) -55°C ~ 175°C (TJ)
PSMN034-100PS,127

PSMN034-100PS,127

MOSFET N-CH 100V 32A TO220AB

Nexperia USA Inc.

9,263 -
PSMN034-100PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 34.5mOhm @ 15A, 10V Through Hole 4V @ 1mA 23.8 nC @ 10 V 100 V ±20V 1201 pF @ 50 V - - TO-220AB - 86W (Tc) -55°C ~ 175°C (TJ)
PSMN3R5-25MLDX

PSMN3R5-25MLDX

MOSFET N-CH 25V 70A LFPAK33

Nexperia USA Inc.

1,478 -
PSMN3R5-25MLDX

数据表

- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 3.72mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 18.9 nC @ 10 V 25 V ±20V 1334 pF @ 12 V - Schottky Diode (Body) LFPAK33 - 65W (Tc) -55°C ~ 175°C (TJ)
PSMN027-100PS,127

PSMN027-100PS,127

MOSFET N-CH 100V 37A TO220AB

Nexperia USA Inc.

8,423 -
PSMN027-100PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 37A (Tc) 10V 26.8mOhm @ 15A, 10V Through Hole 4V @ 1mA 30 nC @ 10 V 100 V ±20V 1624 pF @ 50 V - - TO-220AB - 103W (Tc) -55°C ~ 175°C (TJ)
PSMN3R5-40YSBX

PSMN3R5-40YSBX

PSMN3R5-40YSB/SOT669/LFPAK

Nexperia USA Inc.

1,500 -
PSMN3R5-40YSBX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.5mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 42 nC @ 10 V 40 V ±20V 3220 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 115W (Tc) -55°C ~ 175°C (TJ)
BUK7M19-60EX

BUK7M19-60EX

MOSFET N-CH 60V 35.8A LFPAK33

Nexperia USA Inc.

946 -
BUK7M19-60EX

数据表

TrenchMOS™ SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35.8A (Tc) 10V 19mOhm @ 10A, 10V Surface Mount 4V @ 1mA 17.3 nC @ 10 V 60 V ±20V 1055 pF @ 25 V AEC-Q101 - LFPAK33 Automotive 55W (Tc) -55°C ~ 175°C (TJ)
PMPB40SNA,115

PMPB40SNA,115

MOSFET N-CH 60V 12.9A 6DFN

Nexperia USA Inc.

4,875 -
PMPB40SNA,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12.9A (Tc) 4.5V, 10V 43mOhm @ 4.8A, 10V Surface Mount 3V @ 250µA 24 nC @ 10 V 60 V ±20V 612 pF @ 30 V - - DFN2020MD-6 - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
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