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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN8R0-40PS,127

PSMN8R0-40PS,127

MOSFET N-CH 40V 77A TO220AB

Nexperia USA Inc.

8,146 -
PSMN8R0-40PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 77A (Tc) 10V 7.6mOhm @ 25A, 10V Through Hole 4V @ 1mA 21 nC @ 10 V 40 V ±20V 1262 pF @ 12 V - - TO-220AB - 86W (Tc) -55°C ~ 175°C (TJ)
BUK7Y113-100EX

BUK7Y113-100EX

MOSFET N-CH 100V 12A LFPAK56

Nexperia USA Inc.

1,400 -
BUK7Y113-100EX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 113mOhm @ 5A, 10V Surface Mount 4V @ 1mA 10.4 nC @ 10 V 100 V ±20V 601 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 45W (Tc) -55°C ~ 175°C (TJ)
PMPB14R7EPX

PMPB14R7EPX

MOSFET P-CH 30V 8A DFN2020M-6

Nexperia USA Inc.

7,855 -
PMPB14R7EPX

数据表

TrenchMOS™ 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8A (Ta) - 18mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 44 nC @ 10 V 30 V ±20V 1418 pF @ 15 V - - DFN2020MD-6 - 1.9W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PXP6R7-30QLJ

PXP6R7-30QLJ

PXP6R7-30QL/SOT8002/MLPAK33

Nexperia USA Inc.

4,456 -
PXP6R7-30QLJ

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12.6A (Ta), 66.6A (Tc) 4.5V, 10V 6.7mOhm @ 12.6A, 10V Surface Mount 2.5V @ 250µA 133 nC @ 10 V 30 V ±20V 4400 pF @ 15 V - - MLPAK33 - 1.8W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
PSMN1R5-40YSD/2X

PSMN1R5-40YSD/2X

PSMN1R5-40YSD/SOT669/LFPAK

Nexperia USA Inc.

9,323 -
PSMN1R5-40YSD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 1.5mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 99 nC @ 10 V 40 V ±20V 7752 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 238W (Tc) -55°C ~ 175°C (TJ)
PSMN4R1-30YLC,115

PSMN4R1-30YLC,115

MOSFET N-CH 30V 92A LFPAK56

Nexperia USA Inc.

1,250 -
PSMN4R1-30YLC,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 92A (Tc) 4.5V, 10V 4.35mOhm @ 20A, 10V Surface Mount 1.95V @ 1mA 23 nC @ 10 V 30 V ±20V 1502 pF @ 15 V - - LFPAK56, Power-SO8 - 67W (Tc) -
PSMN1R4-40YLD/2X

PSMN1R4-40YLD/2X

PSMN1R4-40YLD/SOT669/LFPAK

Nexperia USA Inc.

9,582 -
PSMN1R4-40YLD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 4.5V, 10V 1.4mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 143 nC @ 10 V 40 V ±20V 6661 pF @ 20 V - - LFPAK56, Power-SO8 - 238W (Tc) -55°C ~ 175°C (TJ)
BUK9Y7R2-60RAX

BUK9Y7R2-60RAX

BUK9Y7R2-60RA/SOT669/LFPAK

Nexperia USA Inc.

1,500 -
BUK9Y7R2-60RAX

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PSMN1R0-30YLD/2X

PSMN1R0-30YLD/2X

PSMN1R0-30YLD/SOT669/LFPAK

Nexperia USA Inc.

9,124 -
PSMN1R0-30YLD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300A (Tc) 4.5V, 10V 1.02mOhm @ 25A, 10V Surface Mount 2.2V @ 2mA 121.35 nC @ 10 V 30 V ±20V 8598 pF @ 15 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 238W (Tc) -55°C ~ 175°C (TJ)
BUK7Y43-60EX

BUK7Y43-60EX

MOSFET N-CH 60V 22A LFPAK56

Nexperia USA Inc.

986 -
BUK7Y43-60EX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 43mOhm @ 5A, 10V Surface Mount 4V @ 1mA 10.4 nC @ 10 V 60 V ±20V 617 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 45W (Tc) -55°C ~ 175°C (TJ)
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