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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPD60R650CEBTMA1

IPD60R650CEBTMA1

MOSFET N-CH 600V 7A TO252-3

Infineon Technologies

4,636 -
IPD60R650CEBTMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 650mOhm @ 2.4A, 10V Surface Mount 3.5V @ 200µA 20.5 nC @ 10 V 600 V ±20V 440 pF @ 100 V - - PG-TO252-3 - 82W (Tc) -40°C ~ 150°C (TJ)
IPD70R2K0CEAUMA1

IPD70R2K0CEAUMA1

MOSFET N-CH 700V 4A TO252-3

Infineon Technologies

8,998 -
IPD70R2K0CEAUMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2Ohm @ 1A, 10V Surface Mount 3.5V @ 70µA 7.8 nC @ 10 V 700 V ±20V 163 pF @ 100 V - - PG-TO252-3 - 42W (Tc) -40°C ~ 150°C (TJ)
IPD70R600CEAUMA1

IPD70R600CEAUMA1

MOSFET N-CH 700V 10.5A TO252-3

Infineon Technologies

5,083 -
IPD70R600CEAUMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 600mOhm @ 1A, 10V Surface Mount 3.5V @ 210µA 22 nC @ 10 V 700 V ±20V 474 pF @ 100 V - - PG-TO252-3 - 86W (Tc) -40°C ~ 150°C (TJ)
IPS70R600CEAKMA1

IPS70R600CEAKMA1

MOSFET N-CH 700V 10.5A TO251-3

Infineon Technologies

4,423 -
IPS70R600CEAKMA1

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 600mOhm @ 1A, 10V Through Hole 3.5V @ 210µA 22 nC @ 10 V 700 V ±20V 474 pF @ 100 V - - PG-TO251-3-11 - 86W (Tc) -40°C ~ 150°C (TJ)
IPU50R2K0CEAKMA1

IPU50R2K0CEAKMA1

MOSFET N-CH 500V 2.4A TO251-3

Infineon Technologies

4,866 -
IPU50R2K0CEAKMA1

数据表

CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 13V 2Ohm @ 600mA, 13V Through Hole 3.5V @ 50µA 6 nC @ 10 V 500 V ±20V 124 pF @ 100 V - - PG-TO251-3 - 33W (Tc) -55°C ~ 150°C (TJ)
IPU50R3K0CEAKMA1

IPU50R3K0CEAKMA1

MOSFET N-CH 500V 1.7A TO251-3

Infineon Technologies

9,061 -
IPU50R3K0CEAKMA1

数据表

CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 13V 3Ohm @ 400mA, 13V Through Hole 3.5V @ 30µA 4.3 nC @ 10 V 500 V ±20V 84 pF @ 100 V - - PG-TO251-3 - 26W (Tc) -55°C ~ 150°C (TJ)
DMT2004UPS-13

DMT2004UPS-13

MOSFET N-CH 24V 80A PWRDI5060-8

Diodes Incorporated

2,036 -
DMT2004UPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 2.5V, 10V 5mOhm @ 20A, 10V Surface Mount 1.45V @ 250µA 53.7 nC @ 10 V 24 V ±12V 1683 pF @ 15 V AEC-Q101 - PowerDI5060-8 Automotive 3W (Ta) -55°C ~ 150°C (TJ)
DMG7430LFGQ-13

DMG7430LFGQ-13

MOSFET N-CH 30V 10.5A PWRDI3333

Diodes Incorporated

3,879 -
DMG7430LFGQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.5A (Ta) 4.5V, 10V 11mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 26.7 nC @ 10 V 30 V ±20V 1281 pF @ 15 V AEC-Q101 - POWERDI3333-8 Automotive 900mW (Ta) -55°C ~ 150°C (TJ)
TSM2309CX

TSM2309CX

-60V, -3.1A, SINGLE P-CHANNEL PO

Taiwan Semiconductor Corporation

3,289 -
TSM2309CX

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.1A (Tc) 4.5V, 10V 190mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 8.2 nC @ 10 V 60 V ±20V 425 pF @ 30 V - - SOT-23 - 1.56W (Tc) 150°C (TJ)
MCU90N02-TP

MCU90N02-TP

MOSFET N-CH 20V 90A DPAK

Micro Commercial Co

2,808 -
MCU90N02-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 1.8V, 4.5V 4.5mOhm @ 20A, 4.5V Surface Mount 1V @ 250µA 105 nC @ 4.5 V 20 V ±10V 3250 pF @ 10 V - - DPAK - 45W (Tc) -55°C ~ 175°C (TJ)
DMN10H099SFG-13

DMN10H099SFG-13

MOSFET N-CH 100V 4.2A PWRDI3333

Diodes Incorporated

2,174 -
DMN10H099SFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.2A (Ta) 6V, 10V 80mOhm @ 3.3A, 10V Surface Mount 3V @ 250µA 25.2 nC @ 10 V 100 V ±20V 1172 pF @ 50 V - - POWERDI3333-8 - 980mW (Ta) -55°C ~ 150°C (TJ)
PXP010-20QXJ

PXP010-20QXJ

PXP010-20QX/SOT8002/MLPAK33

Nexperia USA Inc.

8,445 -
PXP010-20QXJ

数据表

- 8-PowerVDFN Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 10.8A (Ta), 37.6A (Tc) 1.8V, 4.5V 10mOhm @ 10.6A, 4.5V Surface Mount 1V @ 250µA 29 nC @ 4.5 V 20 V ±12V 1730 pF @ 10 V - - MLPAK33 - 1.7W (Ta), 21W (Tc) -55°C ~ 150°C (TJ)
AONS36303

AONS36303

MOSFET N-CH 30V 5X6 8DFN

Alpha & Omega Semiconductor Inc.

9,705 -
AONS36303

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
DMTH10H032SPSW-13

DMTH10H032SPSW-13

MOSFET BVDSS: 61V~100V PowerDI50

Diodes Incorporated

5,189 -
DMTH10H032SPSW-13

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 32mOhm @ 5A, 10V Surface Mount, Wettable Flank 4V @ 250µA 8 nC @ 10 V 100 V ±20V 544 pF @ 50 V - - PowerDI5060-8 (Type UX) - 3.2W (Ta) -55°C ~ 175°C (TJ)
DMTH4014LPSWQ-13

DMTH4014LPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

2,831 -
DMTH4014LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 43.5A (Tc) 4.5V, 10V 14.5mOhm @ 20A, 10V Surface Mount, Wettable Flank 3V @ 250µA 11.2 nC @ 10 V 40 V ±20V 750 pF @ 20 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 4W (Ta), 46.9W (Tc) -55°C ~ 175°C (TJ)
MPF960

MPF960

MOSFET N-CH 60V 2A TO92-3

onsemi

4,590 -
MPF960

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 1.7Ohm @ 1A, 10V Through Hole 3.5V @ 1mA - 60 V ±20V 70 pF @ 25 V - - TO-92 (TO-226) - 1W (Ta) -55°C ~ 150°C (TJ)
DMTH6012LPSW-13

DMTH6012LPSW-13

MOSFET N-CH 60V 11.5/50.5A PWRDI

Diodes Incorporated

4,455 -
DMTH6012LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.5A (Ta), 50.5A (Tc) 4.5V, 10V 14mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 13.6 nC @ 10 V 60 V ±20V 785 pF @ 30 V - - PowerDI5060-8 (Type Q) - 2.8W (Ta), 53.6W (Tc) -55°C ~ 175°C (TJ)
MCG35N04A-TP

MCG35N04A-TP

Interface

Micro Commercial Co

6,505 -
MCG35N04A-TP

数据表

- 8-VDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 35A 4.5V, 10V 8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 46.7 nC @ 10 V 40 V ±20V 1860 pF @ 20 V - - DFN3333 - 40W -55°C ~ 150°C
MCAC60N04HE3-TP

MCAC60N04HE3-TP

MOSFET N-CH 40 60A DFN5060

Micro Commercial Co

9,162 -
MCAC60N04HE3-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 7mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 40 nC @ 10 V 40 V ±20V 2023 pF @ 25 V AEC-Q101 - DFN5060 Automotive 50W (Tj) -55°C ~ 150°C (TJ)
STD70R1K3S

STD70R1K3S

DISCRETE

STMicroelectronics

8,294 -
STD70R1K3S

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.4Ohm @ 1.75A, 10V Through Hole 3.75V @ 250µA 4.1 nC @ 10 V 700 V ±25V 175 pF @ 100 V - - TO-251 (IPAK) - 77W (Tc) -55°C ~ 150°C (TJ)
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