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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NTD3055-094-1

NTD3055-094-1

MOSFET N-CH 60V 12A IPAK

onsemi

9,126 -
NTD3055-094-1

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 94mOhm @ 6A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 60 V ±20V 450 pF @ 25 V - - IPAK - 1.5W (Ta), 48W (Tj) -55°C ~ 175°C (TJ)
FQD5N20LTF

FQD5N20LTF

MOSFET N-CH 200V 3.8A DPAK

onsemi

5,262 -
FQD5N20LTF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 5V, 10V 1.2Ohm @ 1.9A, 10V Surface Mount 2V @ 250µA 6.2 nC @ 5 V 200 V ±20V 325 pF @ 25 V - - TO-252AA - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ)
SIHFR9014-GE3

SIHFR9014-GE3

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix

4,931 -
SIHFR9014-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V Surface Mount 4V @ 250µA 12 nC @ 10 V 60 V ±20V 270 pF @ 25 V - - TO-252AA - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
XP6P025H

XP6P025H

MOSFET P CH -60V 40A TO-252

YAGEO XSEMI

6,871 -
XP6P025H

数据表

XP6P025 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 25mOhm @ 20A, 10V Surface Mount 3V @ 250µA 59.2 nC @ 4.5 V 60 V ±20V 6400 pF @ 25 V - - TO-252 - 2W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ)
DMTH8028LFVW-13

DMTH8028LFVW-13

MOSFET BVDSS: 61V~100V POWERDI33

Diodes Incorporated

9,560 -
DMTH8028LFVW-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 4.5V, 10V 25mOhm @ 5A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 10.4 nC @ 10 V 80 V ±20V 631 pF @ 40 V - - PowerDI3333-8 (SWP) Type UX - 1.5W (Ta) -55°C ~ 175°C (TJ)
STN3P10F6

STN3P10F6

SOT 223

STMicroelectronics

9,189 -
STN3P10F6

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3A 10V 180mOhm @ 1.5A, 10V Surface Mount 4V @ 250µA 16.5 nC @ 10 V 100 V ±20V 900 pF @ 25 V - - SOT-223 - 3.3W -55°C ~ 175°C
DMN6022SSS-13

DMN6022SSS-13

MOSFET N-CH 6.9A 8SO

Diodes Incorporated

7,267 -
DMN6022SSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.9A (Ta) 6V, 10V 29mOhm @ 5A, 10V Surface Mount 3V @ 250µA 14 nC @ 10 V 60 V ±20V 2110 pF @ 30 V - - 8-SOP - 2.1W (Ta) -55°C ~ 150°C (TJ)
TSM250N02CX

TSM250N02CX

20V, 5.8A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

6,767 -
TSM250N02CX

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.8A (Tc) 1.8V, 4.5V 25mOhm @ 4A, 4.5V Surface Mount 800mV @ 250µA 7.7 nC @ 4.5 V 20 V ±10V 535 pF @ 10 V - - SOT-23 - 1.56W (Tc) 150°C (TJ)
NTLUS3A39PZCTBG

NTLUS3A39PZCTBG

MOSFET P-CH 20V 3.4A 6UDFN

onsemi

5,728 -
NTLUS3A39PZCTBG

数据表

µCool™ 6-PowerUFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.4A (Ta) 1.5V, 4.5V 39mOhm @ 4A, 4.5V Surface Mount 1V @ 250µA 10.4 nC @ 4.5 V 20 V ±8V 920 pF @ 15 V - - 6-UDFN (1.6x1.6) - 600mW (Ta) -55°C ~ 150°C (TJ)
NTMFS5C404NLTWFT1G

NTMFS5C404NLTWFT1G

MOSFET N-CH 40V 5DFN

onsemi

2,984 -
NTMFS5C404NLTWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 370A (Tc) 4.5V, 10V 0.75mOhm @ 50A, 10V Surface Mount 2V @ 250µA 181 nC @ 10 V 40 V ±20V 12168 pF @ 25 V - - 5-DFN (5x6) (8-SOFL) - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
NTMFS5C410NLTWFT1G

NTMFS5C410NLTWFT1G

MOSFET N-CH 40V 50A/330A 5DFN

onsemi

3,735 -
NTMFS5C410NLTWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Ta), 330A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V Surface Mount 2V @ 250µA 143 nC @ 10 V 40 V ±20V 8862 pF @ 25 V - - 5-DFN (5x6) (8-SOFL) - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
NVTFS5824NLTWG

NVTFS5824NLTWG

MOSFET N-CH 60V 20A 8WDFN

onsemi

7,725 -
NVTFS5824NLTWG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 37A (Tc) 4.5V, 10V 20.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 16 nC @ 10 V 60 V ±20V 850 pF @ 25 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta), 57W (Tc) -55°C ~ 175°C (TJ)
NVTFS5824NLWFTWG

NVTFS5824NLWFTWG

MOSFET N-CH 60V 20A 8WDFN

onsemi

9,421 -
NVTFS5824NLWFTWG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 37A (Tc) 4.5V, 10V 20.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 16 nC @ 10 V 60 V ±20V 850 pF @ 25 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta), 57W (Tc) -55°C ~ 175°C (TJ)
IPI030N10N3GXKSA1

IPI030N10N3GXKSA1

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies

5,932 -
IPI030N10N3GXKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V Through Hole 3.5V @ 275µA 206 nC @ 10 V 100 V ±20V 14800 pF @ 50 V - - PG-TO262-3 - 300W (Tc) -55°C ~ 175°C (TJ)
IPI037N08N3GXKSA1

IPI037N08N3GXKSA1

MOSFET N-CH 80V 100A TO262-3

Infineon Technologies

7,395 -
IPI037N08N3GXKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V Through Hole 3.5V @ 155µA 117 nC @ 10 V 80 V ±20V 8110 pF @ 40 V - - PG-TO262-3 - 214W (Tc) -55°C ~ 175°C (TJ)
FCH125N60E

FCH125N60E

MOSFET N-CH 600V 29A TO247-3

onsemi

9,181 -
FCH125N60E

数据表

SuperFET® II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 125mOhm @ 14.5A, 10V Through Hole 3.5V @ 250µA 95 nC @ 10 V 600 V ±20V 2990 pF @ 380 V - - TO-247-3 - 278W (Tc) -55°C ~ 150°C (TJ)
FCP290N80

FCP290N80

MOSFET N-CH 800V 17A TO220-3

onsemi

5,719 -
FCP290N80

数据表

SuperFET® II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 290mOhm @ 8.5A, 10V Through Hole 4.5V @ 1.7mA 75 nC @ 10 V 800 V ±20V 3205 pF @ 100 V - - TO-220-3 - 212W (Tc) -55°C ~ 150°C (TJ)
BSL303SPEH6327XTSA1

BSL303SPEH6327XTSA1

MOSFET P-CH 30V 6.3A TSOP-6

Infineon Technologies

7,053 -
BSL303SPEH6327XTSA1

数据表

OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.3A (Ta) 4.5V, 10V 33mOhm @ 6.3A, 10V Surface Mount 2V @ 30µA 20.9 nC @ 10 V 30 V ±20V 1401 pF @ 15 V - - PG-TSOP6-6 - 2W (Ta) -55°C ~ 150°C (TJ)
BSL305SPEH6327XTSA1

BSL305SPEH6327XTSA1

MOSFET P-CH 30V 5.3A TSOP-6

Infineon Technologies

8,111 -
BSL305SPEH6327XTSA1

数据表

OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 45mOhm @ 5.3A, 10V Surface Mount 2V @ 20µA 14 nC @ 10 V 30 V ±20V 939 pF @ 15 V - - PG-TSOP6-6 - 2W (Ta) -55°C ~ 150°C (TJ)
IPAW60R190CEXKSA1

IPAW60R190CEXKSA1

MOSFET N-CH 600V 26.7A TO220

Infineon Technologies

9,393 -
IPAW60R190CEXKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 26.7A (Tc) 10V 190mOhm @ 9.5A, 10V Through Hole 3.5V @ 630µA 63 nC @ 10 V 600 V ±20V 1400 pF @ 100 V - - PG-TO220-FP - 34W (Tc) -40°C ~ 150°C (TJ)
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