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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PMH550UPEH

PMH550UPEH

MOSFET P-CH 20V 800MA DFN0606-3

Nexperia USA Inc.

6,613 -
PMH550UPEH

数据表

TrenchMOS™ 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 800mA (Ta) 1.8V, 4.5V 640mOhm @ 600mA, 4.5V Surface Mount 950mV @ 250µA 0.9 nC @ 4.5 V 20 V ±8V 54.8 pF @ 10 V - - DFN0606-3 - 360mW (Ta), 2.23W (Tc) -55°C ~ 150°C (TJ)
2N7002KWBQ-TP

2N7002KWBQ-TP

N-CHANNEL MOSFET,SOT-323

Micro Commercial Co

5,988 -
2N7002KWBQ-TP

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300mA (Ta) 4.5V, 10V 2Ohm @ 300mA, 10V Surface Mount 2.5V @ 250µA 1.75 nC @ 10 V 60 V ±20V 18 pF @ 25 V AEC-Q101 - SOT-323 Automotive 416mW (Tj) -55°C ~ 175°C (TJ)
DMN2991UTQ-7

DMN2991UTQ-7

MOSFET BVDSS: 8V~24V SOT523 T&R

Diodes Incorporated

2,630 -
DMN2991UTQ-7

数据表

- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300mA (Ta) 1.5V, 4.5V 3Ohm @ 100mA, 4.5V Surface Mount 1V @ 250µA 0.35 nC @ 4.5 V 20 V ±10V 21.5 pF @ 15 V AEC-Q101 - SOT-523 Automotive 280mW (Ta) -55°C ~ 150°C (TJ)
BSO064N03S

BSO064N03S

MOSFET N-CH 30V 12A 8DSO

Infineon Technologies

4,996 -
BSO064N03S

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 6.4mOhm @ 16A, 10V Surface Mount 2V @ 50µA 28 nC @ 5 V 30 V ±20V 3620 pF @ 15 V - - PG-DSO-8 - 1.56W (Ta) -55°C ~ 150°C (TJ)
DMT12H7M9LPSW-13

DMT12H7M9LPSW-13

MOSFET BVDSS: 101V~250V POWERDI5

Diodes Incorporated

5,194 -
DMT12H7M9LPSW-13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AONS1R1A70

AONS1R1A70

LINEAR IC

Alpha & Omega Semiconductor Inc.

8,982 -
AONS1R1A70

数据表

aMOS5™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.3A (Ta), 6.6A (Tc) 10V 1.1Ohm @ 1A, 10V Surface Mount 4.1V @ 250µA 9.4 nC @ 10 V 700 V ±20V 461 pF @ 100 V - - 8-DFN-EP (5x6) - 4.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
DMN62D0UWQ-7

DMN62D0UWQ-7

MOSFET N-CH 60V 340MA SOT323

Diodes Incorporated

1,126 -
DMN62D0UWQ-7

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 340mA (Ta) 1.8V, 4.5V 2Ohm @ 100mA, 4.5V Surface Mount 1V @ 250µA 0.5 nC @ 4.5 V 60 V ±20V 32 pF @ 30 V AEC-Q101 - SOT-323 Automotive 320mW (Ta) -55°C ~ 150°C (TJ)
IRLZ24NLPBF

IRLZ24NLPBF

MOSFET N-CH 55V 18A TO262

Infineon Technologies

3,327 -
IRLZ24NLPBF

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V Through Hole 2V @ 250µA 15 nC @ 5 V 55 V ±16V 480 pF @ 25 V - - TO-262 - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
PJA3415_R1_00001

PJA3415_R1_00001

SOT-23, MOSFET

Panjit International Inc.

18,943 -
PJA3415_R1_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.8V, 4.5V 57mOhm @ 4A, 4.5V Surface Mount 1.2V @ 250µA 18 nC @ 4.5 V 20 V ±12V 756 pF @ 10 V - - SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
BSC085N025S G

BSC085N025S G

MOSFET N-CH 25V 14A/35A TDSON

Infineon Technologies

3,691 -
BSC085N025S G

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 35A (Tc) 4.5V, 10V 8.5mOhm @ 35A, 10V Surface Mount 2V @ 25µA 14 nC @ 5 V 25 V ±20V 1800 pF @ 15 V - - PG-TDSON-8-1 - 2.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
DMN2046U-13

DMN2046U-13

MOSFET N-CH 20V 3.4A SOT23

Diodes Incorporated

9,886 -
DMN2046U-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.4A (Ta) 2.5V, 4.5V 72mOhm @ 3.6A, 4.5V Surface Mount 1.4V @ 250µA 3.8 nC @ 4.5 V 20 V ±12V 292 pF @ 10 V - - SOT-23-3 - 760mW (Ta) -55°C ~ 150°C (TJ)
IRLMS2002

IRLMS2002

MOSFET N-CH 20V 6.5A MICRO6

Infineon Technologies

6,476 -
IRLMS2002

数据表

HEXFET® SOT-23-6 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V Surface Mount 1.2V @ 250µA 22 nC @ 5 V 20 V ±12V 1310 pF @ 15 V - - Micro6™(SOT23-6) - 2W (Ta) -
DMP2120U-13

DMP2120U-13

MOSFET P-CH 20V 3.8A SOT23 T&R 1

Diodes Incorporated

9,480 -
DMP2120U-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.8A (Ta) 1.8V, 4.5V 62mOhm @ 4.2A, 4.5V Surface Mount 1V @ 250µA 6.3 nC @ 4.5 V 20 V ±8V 487 pF @ 20 V - - SOT-23-3 - 800mW -55°C ~ 150°C (TJ)
FQP6N50

FQP6N50

MOSFET N-CH 500V 5.5A TO220-3

onsemi

3,306 -
FQP6N50

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1.3Ohm @ 2.8A, 10V Through Hole 5V @ 250µA 22 nC @ 10 V 500 V ±30V 790 pF @ 25 V - - TO-220-3 - 98W (Tc) -55°C ~ 150°C (TJ)
IRFR220NCPBF

IRFR220NCPBF

MOSFET N-CH 200V 5A DPAK

Infineon Technologies

3,103 -
IRFR220NCPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 600mOhm @ 2.9A, 10V Surface Mount 4V @ 250µA 23 nC @ 10 V 200 V ±20V 300 pF @ 25 V - - TO-252AA (DPAK) - 43W (Tc) -55°C ~ 175°C (TJ)
DMN2550UFA-7B

DMN2550UFA-7B

MOSFET N-CH 20V 600MA 3DFN

Diodes Incorporated

9,225 -
DMN2550UFA-7B

数据表

- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600mA (Ta) 1.5V, 4.5V 450mOhm @ 200mA, 4.5V Surface Mount 1V @ 250µA 0.88 nC @ 4.5 V 20 V ±8V 52.5 pF @ 16 V - - X2-DFN0806-3 - 360mW (Ta) -55°C ~ 150°C (TJ)
AOT470

AOT470

MOSFET N-CH 75V 10A/100A TO220

Alpha & Omega Semiconductor Inc.

3,596 -
AOT470

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 10A (Ta), 100A (Tc) 10V 10.5mOhm @ 30A, 10V Through Hole 4V @ 250µA 136 nC @ 10 V 75 V ±25V 5640 pF @ 30 V - - TO-220 - 2.1W (Ta), 268W (Tc) -55°C ~ 175°C (TJ)
PJA3419_R1_00001

PJA3419_R1_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

7,814 -
PJA3419_R1_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.8V, 10V 60mOhm @ 4A, 10V Surface Mount 1.2V @ 250µA 6.9 nC @ 4.5 V 20 V ±12V 602 pF @ 10 V - - SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
DMN3730UFB4-7B

DMN3730UFB4-7B

MOSFET N-CH 30V 750MA 3DFN

Diodes Incorporated

7,016 -
DMN3730UFB4-7B

数据表

- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 750mA (Ta) 1.8V, 4.5V 460mOhm @ 200mA, 4.5V Surface Mount 950mV @ 250µA 1.6 nC @ 4.5 V 30 V ±8V 64.3 pF @ 25 V AEC-Q101 - X2-DFN1006-3 Automotive 470mW (Ta) -55°C ~ 150°C (TJ)
DMG1012UWQ-7

DMG1012UWQ-7

MOSFET BVDSS: 8V~24V SOT323 T&R

Diodes Incorporated

2,970 -
DMG1012UWQ-7

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 950mA (Ta) 1.8V, 4.5V 450mOhm @ 600mA, 4.5V Surface Mount 1V @ 250µA 1 nC @ 4.5 V 20 V ±6V 43 pF @ 16 V AEC-Q101 - SOT-323 Automotive 460mW -55°C ~ 150°C (TJ)
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