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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCQ12P04A-TP

MCQ12P04A-TP

MOSFET

Micro Commercial Co

6,906 -
MCQ12P04A-TP

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 21mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 60.3 nC @ 10 V 40 V ±20V 2500 pF @ 20 V - - 8-SOP - 2W (Tj) -55°C ~ 150°C (TJ)
DMT6016LPSW-13

DMT6016LPSW-13

MOSFET N-CH 60V PWRDI5060

Diodes Incorporated

8,278 -
DMT6016LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.2A (Ta), 43A (Tc) 4.5V, 10V 16.5mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 17 nC @ 10 V 60 V ±20V 864 pF @ 30 V - - PowerDI5060-8 (Type UX) - 2.84W (Ta), 41.67W (Tc) -55°C ~ 150°C (TJ)
HAT2131R-EL-E

HAT2131R-EL-E

MOSFET N-CH 350V 900MA 8SOP

Renesas Electronics Corporation

6,368 -
HAT2131R-EL-E

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 900mA (Ta) 4V, 10V 3Ohm @ 450mA, 10V Surface Mount - 20 nC @ 10 V 350 V ±20V 460 pF @ 25 V - - 8-SOP - 2.5W (Ta) 150°C (TJ)
DMTH6016LFDFW-13

DMTH6016LFDFW-13

MOSFET N-CH 60V 9.4A 6UDFN

Diodes Incorporated

2,673 -
DMTH6016LFDFW-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.4A (Ta) 4.5V, 10V 18mOhm @ 10A, 10V Surface Mount 3V @ 250µA 15.3 nC @ 10 V 60 V ±20V 925 pF @ 30 V AEC-Q101 - U-DFN2020-6 (SWP) (Type F) Automotive 1.06W (Ta) -55°C ~ 175°C (TJ)
BSS169L6906HTSA1

BSS169L6906HTSA1

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies

2,530 -
BSS169L6906HTSA1

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 170mA (Ta) 0V, 10V 6Ohm @ 170mA, 10V Surface Mount 1.8V @ 50µA 2.8 nC @ 7 V 100 V ±20V 68 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
DMTH8028LPSW-13

DMTH8028LPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,632 -
DMTH8028LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41.7A (Tc) 4.5V, 10V 25mOhm @ 5A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 10.4 nC @ 10 V 80 V ±20V 641 pF @ 25 V - - PowerDI5060-8 (Type UX) - 3.9W (Ta), 65W (Tc) -55°C ~ 175°C (TJ)
PJD4NA65H_L2_00001

PJD4NA65H_L2_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

3,571 -
PJD4NA65H_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3.75Ohm @ 1.5A, 10V Surface Mount 4V @ 250µA 16.1 nC @ 10 V 650 V ±30V 423 pF @ 25 V - - TO-252AA - 34W (Tc) -55°C ~ 150°C (TJ)
MCU20P03-TP

MCU20P03-TP

MOSFET

Micro Commercial Co

7,961 -
MCU20P03-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V Surface Mount 2V @ 250µA 28 nC @ 10 V 30 V ±20V 1385 pF @ 15 V - - TO-252 (DPAK) - 35.7W (Tj) -55°C ~ 150°C (TJ)
HAT2287WP-EL-E

HAT2287WP-EL-E

MOSFET N-CH 200V 17A 8WPAK

Renesas Electronics Corporation

7,700 -
HAT2287WP-EL-E

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta) 10V 94mOhm @ 8.5A, 10V Surface Mount - 26 nC @ 10 V 200 V ±30V 1200 pF @ 25 V - - 8-WPAK (3) - 30W (Tc) 150°C (TJ)
HAT2299WP-EL-E

HAT2299WP-EL-E

MOSFET N-CH 150V 14A 8WPAK

Renesas Electronics Corporation

9,397 -
HAT2299WP-EL-E

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta) 10V 110mOhm @ 7A, 10V Surface Mount - 15 nC @ 10 V 150 V ±30V 710 pF @ 25 V - - 8-WPAK (3) - 25W (Tc) 150°C (TJ)
N0439N-S19-AY

N0439N-S19-AY

MOSFET N-CH 40V 90A TO220

Renesas Electronics Corporation

5,885 -
N0439N-S19-AY

数据表

- TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 3.3mOhm @ 45A, 10V Through Hole 4V @ 250µA 102 nC @ 10 V 40 V ±20V 5850 pF @ 25 V - - TO-220 - 1.8W (Ta), 147W (Tc) 175°C (TJ)
QS5U16TR

QS5U16TR

MOSFET N-CH 30V 2A TSMT5

Rohm Semiconductor

3,093 -
QS5U16TR

数据表

- SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 2.5V, 4.5V 100mOhm @ 2A, 4.5V Surface Mount 1.5V @ 1mA 3.9 nC @ 4.5 V 30 V ±12V 175 pF @ 10 V - Schottky Diode (Isolated) TSMT5 - 900mW (Ta) 150°C (TJ)
RJK0355DSP-01#J0

RJK0355DSP-01#J0

MOSFET N-CH 30V 12A 8SOP

Renesas Electronics Corporation

7,236 -
RJK0355DSP-01#J0

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 11.1mOhm @ 6A, 10V Surface Mount - 6 nC @ 4.5 V 30 V ±20V 860 pF @ 10 V - - 8-SOP - 1.8W (Ta) 150°C (TJ)
SI5447DC-T1-E3

SI5447DC-T1-E3

MOSFET P-CH 20V 3.5A 1206-8

Vishay Siliconix

5,582 -
SI5447DC-T1-E3

数据表

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 1.8V, 4.5V 76mOhm @ 3.5A, 4.5V Surface Mount 450mV @ 250µA (Min) 10 nC @ 4.5 V 20 V ±8V - - - 1206-8 ChipFET™ - 1.3W (Ta) -55°C ~ 150°C (TJ)
RJK6014DPK-00#T0

RJK6014DPK-00#T0

MOSFET N-CH 600V 16A TO3P

Renesas Electronics Corporation

8,524 -
RJK6014DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Ta) 10V 575mOhm @ 8A, 10V Through Hole - 45 nC @ 10 V 600 V ±30V 1800 pF @ 25 V - - TO-3P - 150W (Tc) 150°C (TJ)
RQK0607AQDQS#H1

RQK0607AQDQS#H1

MOSFET N-CH 60V 2.4A UPAK

Renesas Electronics Corporation

2,915 -
RQK0607AQDQS#H1

数据表

- TO-243AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Ta) 2.5V, 4.5V 270mOhm @ 1.2A, 4.5V Surface Mount - 2 nC @ 4.5 V 60 V ±12V 170 pF @ 10 V - - UPAK - 1.5W (Ta) 150°C (TJ)
SI5447DC-T1-GE3

SI5447DC-T1-GE3

MOSFET P-CH 20V 3.5A 1206-8

Vishay Siliconix

8,631 -
SI5447DC-T1-GE3

数据表

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 1.8V, 4.5V 76mOhm @ 3.5A, 4.5V Surface Mount 450mV @ 250µA (Min) 10 nC @ 4.5 V 20 V ±8V - - - 1206-8 ChipFET™ - 1.3W (Ta) -55°C ~ 150°C (TJ)
UPA2812T1L-E1-AT

UPA2812T1L-E1-AT

MOSFET P-CH 30V 30A 8HVSON

Renesas Electronics Corporation

3,001 -
UPA2812T1L-E1-AT

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 4.8mOhm @ 30A, 10V Surface Mount - 100 nC @ 10 V 30 V ±20V 3740 pF @ 10 V - - 8-HVSON (3.3x3.3) - 1.5W (Ta), 52W (Tc) 150°C (TJ)
UPA2813T1L-E1-AT

UPA2813T1L-E1-AT

MOSFET P-CH 30V 27A 8HVSON

Renesas Electronics Corporation

4,260 -
UPA2813T1L-E1-AT

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 27A (Tc) - 6.2mOhm @ 27A, 10V Surface Mount - 80 nC @ 10 V 30 V - 3130 pF @ 10 V - - 8-HVSON (3.3x3.3) - 1.5W (Ta), 52W (Tc) -
SI3456BDV-T1-GE3

SI3456BDV-T1-GE3

MOSFET N-CH 30V 4.5A 6TSOP

Vishay Siliconix

8,411 -
SI3456BDV-T1-GE3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4.5V, 10V 35mOhm @ 6A, 10V Surface Mount 3V @ 250µA 13 nC @ 10 V 30 V ±20V - - - 6-TSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
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