富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FCH072N60F-F085

FCH072N60F-F085

MOSFET N-CH 600V 52A TO247-3

onsemi

4,730 -
FCH072N60F-F085

数据表

SuperFET® II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 52A (Tc) 10V 72mOhm @ 26A, 10V Through Hole 5V @ 250µA 210 nC @ 10 V 600 V ±20V 6330 pF @ 100 V AEC-Q101 - TO-247-3 Automotive 481W (Tc) -55°C ~ 150°C (TJ)
DMT6030LFDF-7

DMT6030LFDF-7

MOSFET N-CH 60V 6.8A 6UDFN

Diodes Incorporated

4,027 -
DMT6030LFDF-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.8A (Ta) 4.5V, 10V 25.5mOhm @ 6.5A, 10V Surface Mount 2.5V @ 250µA 9.1 nC @ 10 V 60 V ±20V 639 pF @ 30 V - - U-DFN2020-6 (Type F) - 860mW (Ta), 9.62W (Tc) -55°C ~ 150°C (TJ)
DMT4008LFDF-7

DMT4008LFDF-7

MOSFET BVDSS: 31V~40V U-DFN2020-

Diodes Incorporated

3,090 -
DMT4008LFDF-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.8A (Ta) 4.5V, 10V 9.5mOhm @ 10A, 10V Surface Mount 3V @ 250µA 17.1 nC @ 10 V 40 V ±20V 1179 pF @ 20 V - - U-DFN2020-6 (Type F) - 800mW (Ta) -55°C ~ 150°C (TJ)
DMP2006UFG-13

DMP2006UFG-13

MOSFET P-CH 20V 17.5A POWERDI

Diodes Incorporated

2,633 -
DMP2006UFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 17.5A (Ta), 40A (Tc) 1.5V, 4.5V 5.5mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 200 nC @ 10 V 20 V ±10V 7500 pF @ 10 V - - POWERDI3333-8 - 2.3W (Ta) -55°C ~ 150°C (TJ)
DI022P06D1

DI022P06D1

MOSFET DPAK P -60V -22A

Diotec Semiconductor

9,372 -
DI022P06D1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 22A (Tc) 4.5V, 10V 45mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 35 nC @ 10 V 60 V ±20V 2098 pF @ 30 V - - TO-252 (DPAK) - 43W (Tc) -55°C ~ 150°C (TJ)
DMP213DUFA-7B

DMP213DUFA-7B

MOSFET P-CH 25V 145MA 3DFN

Diodes Incorporated

4,976 -
DMP213DUFA-7B

数据表

- 3-XFDFN Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 145mA (Ta) 2.7V, 4.5V 10Ohm @ 200mA, 4.5V Surface Mount 1.5V @ 250µA 0.35 nC @ 4.5 V 25 V -8V 27.2 pF @ 10 V - - X2-DFN0806-3 - 360mW (Ta) -55°C ~ 150°C (TJ)
STP185N10F3

STP185N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

6,982 -
STP185N10F3

数据表

STripFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4.8mOhm @ 60A, 10V Through Hole 4V @ 250µA - 100 V ±20V - - - TO-220 - 300W (Tc) -55°C ~ 175°C (TJ)
STP80NF55

STP80NF55

MOSFET N-CH 55V 80A TO220

STMicroelectronics

9,979 -
STP80NF55

数据表

* TO-220-3 Tube Obsolete - - - - - Through Hole - - - - - - - TO-220 - - -
FDMS9408-F085

FDMS9408-F085

MOSFET N-CH 40V 80A POWER56

onsemi

2,953 -
FDMS9408-F085

数据表

PowerTrench® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 1.8mOhm @ 80A, 10V Surface Mount 4V @ 250µA 92 nC @ 10 V 40 V ±20V 5120 pF @ 25 V AEC-Q101 - Power56 Automotive 214W (Tj) -55°C ~ 175°C (TJ)
APT50MC120JCU2

APT50MC120JCU2

MOSFET N-CH 1200V 71A SOT227

Microchip Technology

6,825 -
APT50MC120JCU2

数据表

- SOT-227-4, miniBLOC Bulk Last Time Buy N-Channel MOSFET (Metal Oxide) 71A (Tc) 20V 34mOhm @ 50A, 20V Chassis Mount 2.3V @ 1mA (Typ) 179 nC @ 20 V 1200 V +25V, -10V 2980 pF @ 1000 V - - SOT-227 - 300W (Tc) -40°C ~ 150°C (TJ)
IPD50R280CEATMA1

IPD50R280CEATMA1

MOSFET N-CH 500V 13A TO252-3

Infineon Technologies

7,270 -
IPD50R280CEATMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 13A (Tc) 13V 280mOhm @ 4.2A, 13V Surface Mount 3.5V @ 350µA 32.6 nC @ 10 V 500 V ±20V 773 pF @ 100 V - - PG-TO252-3 - 119W (Tc) -55°C ~ 150°C (TJ)
IPD50R500CEATMA1

IPD50R500CEATMA1

MOSFET N-CH 500V 7.6A TO252-3

Infineon Technologies

5,872 -
IPD50R500CEATMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V Surface Mount 3.5V @ 200µA 18.7 nC @ 10 V 500 V ±20V 433 pF @ 100 V - - PG-TO252-3 - 57W (Tc) -55°C ~ 150°C (TJ)
IPD50R650CEATMA1

IPD50R650CEATMA1

MOSFET N-CH 500V 6.1A TO252-3

Infineon Technologies

5,552 -
IPD50R650CEATMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.1A (Tc) 13V 650mOhm @ 1.8A, 13V Surface Mount 3.5V @ 150µA 15 nC @ 10 V 500 V ±20V 342 pF @ 100 V - - PG-TO252-3 - 69W (Tc) -55°C ~ 150°C (TJ)
IPD50R800CEATMA1

IPD50R800CEATMA1

MOSFET N CH 500V 5A TO252

Infineon Technologies

8,146 -
IPD50R800CEATMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 13V 800mOhm @ 1.5A, 13V Surface Mount 3.5V @ 130µA 12.4 nC @ 10 V 500 V ±20V 280 pF @ 100 V - - PG-TO252-3 - 60W (Tc) -55°C ~ 150°C (TJ)
AOI444

AOI444

MOSFET N-CH 60V 4A/12A TO251A

Alpha & Omega Semiconductor Inc.

3,591 -
AOI444

数据表

- TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 4A (Ta), 12A (Tc) 4.5V, 10V 60mOhm @ 12A, 10V Through Hole 3V @ 250µA 10 nC @ 10 V 60 V ±20V 540 pF @ 30 V - - TO-251A - 2.1W (Ta), 20W (Tc) -55°C ~ 175°C (TJ)
IPD50R950CEATMA1

IPD50R950CEATMA1

MOSFET N-CH 500V 4.3A TO252-3

Infineon Technologies

6,073 -
IPD50R950CEATMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V Surface Mount 3.5V @ 100µA 10.5 nC @ 10 V 500 V ±20V 231 pF @ 100 V - - PG-TO252-3 - 53W (Tc) -55°C ~ 150°C (TJ)
FQPF6N15

FQPF6N15

MOSFET N-CH 150V 5A TO220F

onsemi

3,836 -
FQPF6N15

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 600mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 8.5 nC @ 10 V 150 V ±25V 270 pF @ 25 V - - TO-220F-3 - 38W (Tc) -55°C ~ 175°C (TJ)
IPD60R750E6ATMA1

IPD60R750E6ATMA1

MOSFET N-CH 600V 5.7A TO252-3

Infineon Technologies

3,929 -
IPD60R750E6ATMA1

数据表

CoolMOS™ E6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.7A (Tc) 10V 750mOhm @ 2A, 10V Surface Mount 3.5V @ 170µA 17.2 nC @ 10 V 600 V ±20V 373 pF @ 100 V - - PG-TO252-3 - 48W (Tc) -55°C ~ 150°C (TJ)
IPU60R600C6AKMA1

IPU60R600C6AKMA1

MOSFET N-CH 600V 7.3A TO251-3

Infineon Technologies

7,425 -
IPU60R600C6AKMA1

数据表

CoolMOS™ C6 TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V Through Hole 3.5V @ 200µA 20.5 nC @ 10 V 600 V ±20V 440 pF @ 100 V - - PG-TO251-3 - 63W (Tc) -55°C ~ 150°C (TJ)
FQP2N30

FQP2N30

MOSFET N-CH 300V 2.1A TO220-3

onsemi

6,411 -
FQP2N30

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Tc) 10V 3.7Ohm @ 1.05A, 10V Through Hole 5V @ 250µA 5 nC @ 10 V 300 V ±30V 130 pF @ 25 V - - TO-220-3 - 40W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户