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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMN3020UFDFQ-7

DMN3020UFDFQ-7

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

8,014 -
DMN3020UFDFQ-7

数据表

- 6-UDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 10.4A (Ta), 15A (Tc) 1.5V, 4.5V 19mOhm @ 4.5A, 4.5V Surface Mount 1V @ 250µA 27 nC @ 8 V 30 V ±12V 1304 pF @ 15 V AEC-Q101 - U-DFN2020-6 (Type F) Automotive 730mW (Ta) -55°C ~ 150°C (TJ)
SIS429DNT-T1-GE3

SIS429DNT-T1-GE3

MOSFET P-CH 30V 20A PPAK1212-8

Vishay Siliconix

7,141 -
SIS429DNT-T1-GE3

数据表

- PowerPAK® 1212-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 21mOhm @ 10.5A, 10V Surface Mount 3V @ 250µA 50 nC @ 10 V 30 V ±20V 1350 pF @ 15 V - - PowerPAK® 1212-8 - 27.8W (Tc) -55°C ~ 150°C (TJ)
ZXM61P02FTC

ZXM61P02FTC

MOSFET P-CH 20V 900MA SOT23-3

Diodes Incorporated

9,665 -
ZXM61P02FTC

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 900mA (Ta) 2.7V, 4.5V 600mOhm @ 610mA, 4.5V Surface Mount 1.5V @ 250µA 3.5 nC @ 4.5 V 20 V ±12V 150 pF @ 15 V - - SOT-23-3 - 625mW (Ta) -55°C ~ 150°C (TJ)
ZXM61P03FTC

ZXM61P03FTC

MOSFET P-CH 30V 1.1A SOT23-3

Diodes Incorporated

8,903 -
ZXM61P03FTC

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.1A (Ta) 4.5V, 10V 350mOhm @ 600mA, 10V Surface Mount 1V @ 250µA 4.8 nC @ 10 V 30 V ±20V 140 pF @ 25 V - - SOT-23-3 - 625mW (Ta) -55°C ~ 150°C (TJ)
BSS119L6433HTMA1

BSS119L6433HTMA1

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies

5,518 -
BSS119L6433HTMA1

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V Surface Mount 2.3V @ 50µA 2.5 nC @ 10 V 100 V ±20V 78 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
2N7002

2N7002

MOSFET N-CH 60V 200MA SOT23-3

EVVO

6,884 -
2N7002

数据表

UMW TO-236-3, SC-59, SOT-23-3 Active N-Channel MOSFET (Metal Oxide) 115mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V Surface Mount 2.5V @ 250µA - 60 V 20V 50 pF @ 25 V - - SOT-23 - 225mW (Ta) 150°C (TJ)
DMN4060SVTQ-13

DMN4060SVTQ-13

MOSFET BVDSS: 31V~40V TSOT26 T&R

Diodes Incorporated

7,864 -
DMN4060SVTQ-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Active N-Channel MOSFET (Metal Oxide) 4.3A (Ta) 4.5V, 10V 46mOhm @ 4.3A, 10V Surface Mount 3V @ 250µA 20 nC @ 10 V 45 V ±20V 1159 pF @ 25 V AEC-Q101 - TSOT-26 Automotive 1.2W (Ta) -55°C ~ 150°C (TJ)
JANTX2N6790

JANTX2N6790

MOSFET N-CH 200V 3.5A TO39

Microsemi Corporation

9,835 -
JANTX2N6790

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 850mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 14.3 nC @ 10 V 200 V ±20V - MIL-PRF-19500/555 - TO-39 Military 800mW (Tc) -55°C ~ 150°C (TJ)
JANTX2N6790U

JANTX2N6790U

MOSFET N-CH 200V 2.8A 18ULCC

Microsemi Corporation

8,101 -
JANTX2N6790U

数据表

- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 850mOhm @ 3.5A, 10V Surface Mount 4V @ 250µA 14.3 nC @ 10 V 200 V ±20V - MIL-PRF-19500/555 - 18-ULCC (9.14x7.49) Military 800mW (Tc) -55°C ~ 150°C (TJ)
JANTX2N6796

JANTX2N6796

MOSFET N-CH 100V 8A TO205AF

Microsemi Corporation

8,999 -
JANTX2N6796

数据表

- TO-205AD, TO-39-3 Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 195mOhm @ 8A, 10V Through Hole 4V @ 250µA 28.51 nC @ 10 V 100 V ±20V - MIL-PRF-19500/557 - TO-205AF (TO-39) Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
JANTX2N6796U

JANTX2N6796U

MOSFET N-CH 100V 8A 18ULCC

Microsemi Corporation

2,693 -
JANTX2N6796U

数据表

- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 195mOhm @ 8A, 10V Surface Mount 4V @ 250µA 28.51 nC @ 10 V 100 V ±20V - MIL-PRF-19500/557 - 18-ULCC (9.14x7.49) Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IPC014N03L3X1SA1

IPC014N03L3X1SA1

MOSFET N-CH 30V 2A SAWN ON FOIL

Infineon Technologies

8,668 -
IPC014N03L3X1SA1

数据表

OptiMOS™ Die Bulk Active N-Channel MOSFET (Metal Oxide) 2A (Tj) 10V 50mOhm @ 2A, 10V Surface Mount 2.2V @ 250µA - 30 V - - - - Sawn on foil - - -
DMN66D0LW-7

DMN66D0LW-7

MOSFET N-CH 60V 115MA SOT323

Diodes Incorporated

9,750 -
DMN66D0LW-7

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 115mA (Ta) 5V, 10V 6Ohm @ 115mA, 5V Surface Mount 2V @ 250µA - 60 V ±20V 23 pF @ 25 V - - SOT-323 - 200mW (Ta) -55°C ~ 150°C (TJ)
BUK4D38-20PZ

BUK4D38-20PZ

BUK4D38-20P/SOT1220/DFN2020MD-

Nexperia USA Inc.

4,746 -
BUK4D38-20PZ

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6A (Ta), 18A (Tc) 2.5V, 8V 33mOhm @ 6A, 8V Surface Mount 1.3V @ 250µA 16 nC @ 4.5 V 20 V ±12V 1025 pF @ 10 V AEC-Q101 - DFN2020MD-6 Automotive 2W (Ta), 19W (Tc) -55°C ~ 175°C (TJ)
DMN3028LQ-13

DMN3028LQ-13

MOSFET BVDSS: 25V~30V SOT23 T&R

Diodes Incorporated

8,479 -
DMN3028LQ-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.2A (Ta) 2.5V, 10V 25mOhm @ 4A, 10V Surface Mount 1.8V @ 250µA 10.9 nC @ 10 V 30 V ±20V 680 pF @ 15 V AEC-Q101 - SOT-23-3 Automotive 860mW (Ta) -55°C ~ 150°C (TJ)
DI1A5N60D1

DI1A5N60D1

MOSFET DPAK N 600V 1.5A 8OHM

Diotec Semiconductor

2,158 -
DI1A5N60D1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 10V 8Ohm @ 750mA, 10V Surface Mount 4V @ 250µA 7.9 nC @ 10 V 600 V ±30V 156 pF @ 25 V - - TO-252 (DPAK) - 25W (Tc) -55°C ~ 150°C (TJ)
DMP2040UFDF-13

DMP2040UFDF-13

MOSFET P-CH 20V 13A 6UDFN

Diodes Incorporated

7,355 -
DMP2040UFDF-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 13A (Tc) 2.5V, 4.5V 32mOhm @ 8.9A, 4.5V Surface Mount 1.5V @ 250µA 19 nC @ 8 V 20 V ±12V 834 pF @ 10 V - - U-DFN2020-6 (Type F) - 1.8W (Ta) -55°C ~ 150°C (TJ)
NDF0610

NDF0610

MOSFET P-CH 60V 180MA TO92-3

onsemi

4,299 -
NDF0610

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 180mA (Ta) - 10Ohm @ 500mA, 10V Through Hole 3.5V @ 1mA 1.43 nC @ 10 V 60 V - 60 pF @ 25 V - - TO-92-3 - - -
AO6701

AO6701

MOSFET P-CH 30V 2.3A 6TSOP

Alpha & Omega Semiconductor Inc.

5,433 -
AO6701

数据表

- SC-74, SOT-457 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.3A (Ta) 2.5V, 10V 135mOhm @ 2.3A, 10V Surface Mount 1.4V @ 250µA 4.9 nC @ 4.5 V 30 V ±12V 409 pF @ 15 V - Schottky Diode (Isolated) 6-TSOP - 1.15W (Ta) -55°C ~ 150°C (TJ)
PMPB16EPX

PMPB16EPX

MOSFET P-CH 30V 7.5A DFN2020MD-6

Nexperia USA Inc.

4,266 -
PMPB16EPX

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 7.5A (Ta) 4.5V, 10V 20mOhm @ 7.5A, 10V Surface Mount 2.5V @ 250µA 44 nC @ 10 V 30 V ±25V 1418 pF @ 15 V - - DFN2020MD-6 - 2W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
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