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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT12067B2LLG

APT12067B2LLG

MOSFET N-CH 1200V 18A T-MAX

Microsemi Corporation

8,041 -
APT12067B2LLG

数据表

POWER MOS 7® TO-247-3 Variant Bulk Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 670mOhm @ 9A, 10V Through Hole 5V @ 2.5mA 150 nC @ 10 V 1200 V ±30V 4420 pF @ 25 V - - T-MAX™ [B2] - 565W (Tc) -55°C ~ 150°C (TJ)
APT18M80S

APT18M80S

MOSFET N-CH 800V 19A D3PAK

Microsemi Corporation

5,835 -
APT18M80S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 530mOhm @ 9A, 10V Surface Mount 5V @ 1mA 120 nC @ 10 V 800 V ±30V 3760 pF @ 25 V - - D3PAK - 500W (Tc) -55°C ~ 150°C (TJ)
APTC90SKM60CT1G

APTC90SKM60CT1G

MOSFET N-CH 900V 59A SP1

Microchip Technology

3,052 -
APTC90SKM60CT1G

数据表

CoolMOS™ SP1 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 10V 60mOhm @ 52A, 10V Chassis Mount 3.5V @ 6mA 540 nC @ 10 V 900 V ±20V 13600 pF @ 100 V - - SP1 - 462W (Tc) -40°C ~ 150°C (TJ)
JAN2N6756

JAN2N6756

MOSFET N-CH 100V 14A TO204AA

Microsemi Corporation

3,757 -
JAN2N6756

数据表

- TO-204AA, TO-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 210mOhm @ 14A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 100 V ±20V - MIL-PRF-19500/542 - TO-204AA (TO-3) Military 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ)
JAN2N6764

JAN2N6764

MOSFET N-CH 100V 38A TO204AE

Microsemi Corporation

7,628 -
JAN2N6764

数据表

- TO-204AE Bulk Obsolete N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 65mOhm @ 38A, 10V Through Hole 4V @ 250µA 125 nC @ 10 V 100 V ±20V - MIL-PRF-19500/543 - - Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
JAN2N6766

JAN2N6766

MOSFET N-CH 200V 30A TO3

Microsemi Corporation

8,868 -
JAN2N6766

数据表

- TO-204AE Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 90mOhm @ 30A, 10V Through Hole 4V @ 250µA 115 nC @ 10 V 200 V ±20V - MIL-PRF-19500/543 - TO-3 Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
JAN2N6768

JAN2N6768

MOSFET N-CH 400V 14A TO204AE

Microsemi Corporation

3,459 -
JAN2N6768

数据表

- TO-204AE Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 400mOhm @ 14A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 400 V ±20V - MIL-PRF-19500/543 - - Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
JAN2N6770

JAN2N6770

MOSFET N-CH 500V 12A TO204AE

Microsemi Corporation

4,690 -
JAN2N6770

数据表

- TO-204AE Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 500mOhm @ 12A, 10V Through Hole 4V @ 250µA 120 nC @ 10 V 500 V ±20V - MIL-PRF-19500/543 - TO-204AE (TO-3) Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
JAN2N6782

JAN2N6782

MOSFET N-CH 100V 3.5A TO39

Microsemi Corporation

3,073 -
JAN2N6782

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 610mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 8.1 nC @ 10 V 100 V ±20V - MIL-PRF-19500/556 - TO-39 Military 800mW (Ta), 15W (Tc) -55°C ~ 150°C (TJ)
ACMSP2303T-HF

ACMSP2303T-HF

MOSFET P-CH 30V 2.7A SOT23-3

Comchip Technology

2,134 -
ACMSP2303T-HF

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.7A (Tc) - 190mOhm @ 1.9A, 10V Surface Mount 3V @ 250µA 22 nC @ 15 V 30 V ±20V 155 pF @ 15 V AEC-Q101 - SOT-23-3 Automotive 1W (Ta), 2.3W (Tc) -55°C ~ 150°C (TJ)
ACMSN2312T-HF

ACMSN2312T-HF

MOSFET N-CH 20V 4.9A SOT23-3

Comchip Technology

7,155 -
ACMSN2312T-HF

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.9A (Ta) - 31mOhm @ 5A, 4.5V Surface Mount 1.2V @ 250µA 14 nC @ 4.5 V 20 V ±8V 500 pF @ 8 V AEC-Q101 - SOT-23-3 Automotive 750mW (Ta) -55°C ~ 150°C (TJ)
DMN3061LCA3-7

DMN3061LCA3-7

MOSFET BVDSS: 25V~30V X4-DSN1006

Diodes Incorporated

3,375 -
DMN3061LCA3-7

数据表

- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.6A (Ta) 1.8V, 8V 58mOhm @ 500mA, 8V Surface Mount 1.1V @ 250µA 1.4 nC @ 4.5 V 30 V 12V 126 pF @ 15 V - - X4-DSN1006-3 (Type C) - 1.12W -55°C ~ 150°C (TJ)
DMP2033UVT-13

DMP2033UVT-13

MOSFET P-CH 20V 4.2A TSOT-26

Diodes Incorporated

9,411 -
DMP2033UVT-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.2A (Ta) 1.8V, 4.5V 65mOhm @ 4.2A, 4.5V Surface Mount 900mV @ 250µA 10.4 nC @ 4.5 V 20 V ±8V 845 pF @ 15 V - - TSOT-26 - 1.2W (Ta) -55°C ~ 150°C (TJ)
DMP3028LFDEQ-7

DMP3028LFDEQ-7

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

2,930 -
DMP3028LFDEQ-7

数据表

- 6-PowerUDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.8A (Ta) 4.5V, 10V 25mOhm @ 7A, 10V Surface Mount 2.4V @ 250µA 33 nC @ 10 V 30 V ±20V 1860 pF @ 15 V AEC-Q101 - U-DFN2020-6 (Type E) Automotive 660mW (Ta) -55°C ~ 150°C (TJ)
NTR4503NT3

NTR4503NT3

MOSFET N-CH 30V 1.5A SOT23-3

onsemi

8,417 -
NTR4503NT3

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 4.5V, 10V 110mOhm @ 2.5A, 10V Surface Mount 3V @ 250µA 7 nC @ 10 V 30 V ±20V 250 pF @ 24 V - - SOT-23-3 (TO-236) - 420mW (Ta) -55°C ~ 150°C (TJ)
PMN30ENEAH

PMN30ENEAH

PMN30ENEA/SOT457/SC-74

Nexperia USA Inc.

7,298 -
PMN30ENEAH

数据表

- SC-74, SOT-457 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.4A (Ta) 4.5V, 10V 30mOhm @ 5.4A, 10V Surface Mount 2.5V @ 250µA 11.7 nC @ 10 V 40 V ±20V 440 pF @ 20 V AEC-Q101 - 6-TSOP Automotive 667mW (Ta), 7.5W (Tc) -55°C ~ 175°C (TJ)
BSS84

BSS84

MOSFET P-CH 50V 130MA SOT23-3

EVVO

9,236 -
BSS84

数据表

- - Active - - - - - - - - - - - - - - - - -
FDN327N

FDN327N

20V 2A 500MW [email protected],2A 1.5V@25

Shenzhen Slkormicro Semicon Co., Ltd.

6,290 -
FDN327N

数据表

- TO-236-3, SC-59, SOT-23-3 Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 1.8V, 4.5V 70mOhm @ 2A, 4.5V Surface Mount 1.5V @ 250µA 3.6 nC @ 10 V 20 V ±8V 222 pF @ 10 V - - SOT-23 - 500mW (Tc) 150°C (TJ)
TSM1N45CT B0G

TSM1N45CT B0G

MOSFET N-CH 450V 500MA TO92

Taiwan Semiconductor Corporation

9,741 -
TSM1N45CT B0G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) 10V 4.25Ohm @ 250mA, 10V Through Hole 4.25V @ 250µA 6.5 nC @ 10 V 450 V ±30V 235 pF @ 25 V - - TO-92 - 2W (Tc) -55°C ~ 150°C (TJ)
PJL9401_R2_00001

PJL9401_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,834 -
PJL9401_R2_00001

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4.5V, 10V 110mOhm @ 3A, 10V Surface Mount 2.1V @ 250µA 9.8 nC @ 10 V 30 V ±20V 396 pF @ 15 V - - 8-SOP - 2.1W (Ta) -55°C ~ 150°C (TJ)
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