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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STF13N95K3

STF13N95K3

MOSFET N-CH 950V 10A TO220FP

STMicroelectronics

975 -
STF13N95K3

数据表

SuperMESH3™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 850mOhm @ 5A, 10V Through Hole 5V @ 100µA 51 nC @ 10 V 950 V ±30V 1620 pF @ 100 V - - TO-220FP - 40W (Tc) -55°C ~ 150°C (TJ)
TK090U65Z,RQ

TK090U65Z,RQ

DTMOS VI TOLL PD=230W F=1MHZ

Toshiba Semiconductor and Storage

2,118 -
TK090U65Z,RQ

数据表

DTMOSVI 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 10V 90mOhm @ 15A, 10V Surface Mount 4V @ 1.27mA 47 nC @ 10 V 650 V ±30V 2780 pF @ 300 V - - TOLL - 230W (Tc) 150°C
NTHL110N65S3F

NTHL110N65S3F

MOSFET N-CH 650V 30A TO247-3

onsemi

895 -
NTHL110N65S3F

数据表

- TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 110mOhm @ 15A, 10V Through Hole 5V @ 3mA 58 nC @ 10 V 650 V ±30V 2560 pF @ 400 V - - TO-247-3 - 240W (Tc) -55°C ~ 150°C (TJ)
IPW60R125C6FKSA1

IPW60R125C6FKSA1

MOSFET N-CH 600V 30A TO247-3

Infineon Technologies

272 -
IPW60R125C6FKSA1

数据表

CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 125mOhm @ 14.5A, 10V Through Hole 3.5V @ 960µA 96 nC @ 10 V 600 V ±20V 2127 pF @ 100 V - - PG-TO247-3-1 - 219W (Tc) -55°C ~ 150°C (TJ)
FCH110N65F-F155

FCH110N65F-F155

MOSFET N-CH 650V 35A TO247

onsemi

761 -
FCH110N65F-F155

数据表

FRFET®, SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 110mOhm @ 17.5A, 10V Through Hole 5V @ 3.5mA 145 nC @ 10 V 650 V ±20V 4895 pF @ 100 V - - TO-247-3 - 357W (Tc) -55°C ~ 150°C (TJ)
DMTH8001STLWQ-13

DMTH8001STLWQ-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated

3,013 -
DMTH8001STLWQ-13

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 270A (Tc) 10V 1.7mOhm @ 30A, 10V Surface Mount 4V @ 250µA 138 nC @ 10 V 80 V ±20V 8894 pF @ 50 V - - POWERDI1012-8 - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ)
DMTH10H1M7STLWQ-13

DMTH10H1M7STLWQ-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated

1,363 -
DMTH10H1M7STLWQ-13

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250A (Tc) 10V 2mOhm @ 30A, 10V Surface Mount 4V @ 250µA 147 nC @ 10 V 100 V ±20V 9871 pF @ 50 V - - POWERDI1012-8 - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ)
IPB65R099CFD7AATMA1

IPB65R099CFD7AATMA1

MOSFET N-CH 650V 24A TO263-3

Infineon Technologies

884 -
IPB65R099CFD7AATMA1

数据表

CoolMOS™ CFD7A TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 99mOhm @ 12.5A, 10V Surface Mount 4.5V @ 630µA 53 nC @ 10 V 650 V ±20V 2513 pF @ 400 V AEC-Q101 - PG-TO263-3 Automotive 127W (Tc) -40°C ~ 150°C (TJ)
STW15NK50Z

STW15NK50Z

MOSFET N-CH 500V 14A TO247-3

STMicroelectronics

581 -
STW15NK50Z

数据表

SuperMESH™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 340mOhm @ 7A, 10V Through Hole 4.5V @ 100µA 106 nC @ 10 V 500 V ±30V 2260 pF @ 25 V - - TO-247-3 - 160W (Tc) -50°C ~ 150°C (TJ)
STB25N80K5

STB25N80K5

MOSFET N-CH 800V 19.5A D2PAK

STMicroelectronics

518 -
STB25N80K5

数据表

SuperMESH5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19.5A (Tc) 10V 260mOhm @ 19.5A, 10V Surface Mount 5V @ 100µA 40 nC @ 10 V 800 V ±30V 1600 pF @ 100 V - - TO-263 (D2PAK) - 250W (Tc) -55°C ~ 150°C (TJ)
IPL65R095CFD7AUMA1

IPL65R095CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies

2,970 -
IPL65R095CFD7AUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 95mOhm @ 12.5A, 10V Surface Mount 4.5V @ 630µA 53 nC @ 10 V 650 V ±20V 2513 pF @ 400 V - - PG-VSON-4 - 171W (Tc) -40°C ~ 150°C (TJ)
PJMH120N60EC_T0_00601

PJMH120N60EC_T0_00601

600V/ 120MOHM / 30A/ EASY TO DRI

Panjit International Inc.

1,800 -
PJMH120N60EC_T0_00601

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 120mOhm @ 12A, 10V Through Hole 4V @ 250µA 51 nC @ 10 V 600 V ±30V 1960 pF @ 400 V - - TO-247AD - 235W (Tc) -55°C ~ 150°C (TJ)
TK28V65W5,LQ

TK28V65W5,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,500 -
TK28V65W5,LQ

数据表

- 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27.6A (Ta) 10V 140mOhm @ 13.8A, 10V Surface Mount 4.5V @ 1.6mA 90 nC @ 10 V 650 V ±30V 3000 pF @ 300 V - - 4-DFN-EP (8x8) - 240W (Tc) 150°C
IPTC063N15NM5ATMA1

IPTC063N15NM5ATMA1

OPTIMOS 5 POWER MOSFET

Infineon Technologies

1,800 -
IPTC063N15NM5ATMA1

数据表

OptiMOS™ 5 16-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16.2A (Ta), 122A (Tc) 8V, 10V 6.3mOhm @ 50A, 10V Surface Mount 4.6V @ 163µA 63 nC @ 10 V 150 V ±20V 4800 pF @ 75 V - - PG-HDSOP-16-2 - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ)
STP21N90K5

STP21N90K5

MOSFET N-CH 900V 18.5A TO220-3

STMicroelectronics

965 -
STP21N90K5

数据表

SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 18.5A (Tc) 10V 299mOhm @ 9A, 10V Through Hole 5V @ 100µA 43 nC @ 10 V 900 V ±30V 1645 pF @ 100 V - - TO-220 - 250W (Tc) -55°C ~ 150°C (TJ)
FCP130N60

FCP130N60

MOSFET N-CH 600V 28A TO220-3

onsemi

515 -
FCP130N60

数据表

SuperFET® II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 130mOhm @ 14A, 10V Through Hole 3.5V @ 250µA 70 nC @ 10 V 600 V ±20V 3590 pF @ 380 V - - TO-220-3 - 278W (Tc) -55°C ~ 150°C (TJ)
RCJ700N20TL

RCJ700N20TL

MOSFET N-CH 200V 70A LPTS

Rohm Semiconductor

926 -
RCJ700N20TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 42.7mOhm @ 35A, 10V Surface Mount 5V @ 1mA 125 nC @ 10 V 200 V ±30V 6900 pF @ 25 V - - LPTS - 1.56W (Ta), 40W (Tc) 150°C (TJ)
IXTQ96N20P

IXTQ96N20P

MOSFET N-CH 200V 96A TO3P

Littelfuse Inc.

285 -
IXTQ96N20P

数据表

Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 96A (Tc) 10V 24mOhm @ 500mA, 10V Through Hole 5V @ 250µA 145 nC @ 10 V 200 V ±20V 4800 pF @ 25 V - - TO-3P - 600W (Tc) -55°C ~ 175°C (TJ)
IXTH20N65X2

IXTH20N65X2

MOSFET N-CH 650V 20A TO247

Littelfuse Inc.

114 -
IXTH20N65X2

数据表

Ultra X2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 185mOhm @ 10A, 10V Through Hole 4.5V @ 250µA 27 nC @ 10 V 650 V ±30V 1450 pF @ 25 V - - TO-247 (IXTH) - 290W (Tc) -55°C ~ 150°C (TJ)
SIHH14N65EF-T1-GE3

SIHH14N65EF-T1-GE3

MOSFET N-CH 650V 15A PPAK 8 X 8

Vishay Siliconix

3,000 -
SIHH14N65EF-T1-GE3

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 271mOhm @ 7A, 10V Surface Mount 4V @ 250µA 98 nC @ 10 V 650 V ±30V 1749 pF @ 100 V - - PowerPAK® 8 x 8 - 156W (Tc) -55°C ~ 150°C (TJ)
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