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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIRA60DP-T1-RE3

SIRA60DP-T1-RE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix

8,719 -
SIRA60DP-T1-RE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 0.94mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 125 nC @ 10 V 30 V +20V, -16V 7650 pF @ 15 V - - PowerPAK® SO-8 - 57W (Tc) -55°C ~ 150°C (TJ)
AO4268

AO4268

MOSFET N-CHANNEL 60V 19A 8SOIC

Alpha & Omega Semiconductor Inc.

4,929 -
AO4268

数据表

AlphaSGT™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta) 4.5V, 10V 4.8mOhm @ 19A, 10V Surface Mount 2.3V @ 250µA 65 nC @ 10 V 60 V ±20V 2500 pF @ 30 V - - 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
XP60SC380DH

XP60SC380DH

MOSFET N CH 600V 10A TO-252

YAGEO XSEMI

4,487 -
XP60SC380DH

数据表

XP60SC380D TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 380mOhm @ 2.8A, 10V Surface Mount 4.5V @ 250µA 28.8 nC @ 10 V 600 V ±20V 1016 pF @ 100 V - - TO-252 - 2W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ)
TSM080NB03CR

TSM080NB03CR

30V, 59A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

5,651 -
TSM080NB03CR

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 59A (Tc) 4.5V, 10V 8mOhm @ 14A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 30 V ±20V 1097 pF @ 15 V - - 8-PDFN (5x6) - 3.1W (Ta), 55.6W (Tc) -55°C ~ 175°C (TJ)
IRFR2405TRRPBF

IRFR2405TRRPBF

MOSFET N-CH 55V 56A DPAK

Infineon Technologies

4,792 -
IRFR2405TRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 16mOhm @ 34A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 55 V ±20V 2430 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
R8008ANJFRGTL

R8008ANJFRGTL

MOSFET N-CH 800V 8A LPTS

Rohm Semiconductor

970 -
R8008ANJFRGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.03Ohm @ 4A, 10V Surface Mount 5V @ 1mA 38 nC @ 10 V 800 V ±30V 1100 pF @ 25 V AEC-Q101 - LPTS Automotive 195W (Tc) 150°C (TJ)
DMTH8008SFGQ-7

DMTH8008SFGQ-7

MOSFET BVDSS: 61V~100V POWERDI33

Diodes Incorporated

5,006 -
DMTH8008SFGQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 68A (Tc) 6V, 10V 7mOhm @ 14A, 10V Surface Mount 4V @ 1mA 31.7 nC @ 10 V 80 V ±20V 1945 pF @ 40 V AEC-Q101 - POWERDI3333-8 Automotive 1.2W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
STI6N62K3

STI6N62K3

MOSFET N-CH 620V 5.5A I2PAK

STMicroelectronics

8,658 -
STI6N62K3

数据表

SuperMESH3™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1.2Ohm @ 2.8A, 10V Through Hole 4.5V @ 50µA 34 nC @ 10 V 620 V ±30V 875 pF @ 50 V - - I2PAK - 90W (Tc) -55°C ~ 150°C (TJ)
DMTH62M8LPS-13

DMTH62M8LPS-13

MOSFET N-CH 60V 100A PWRDI5060-8

Diodes Incorporated

2,272 -
DMTH62M8LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2.8mOhm @ 50A, 10V Surface Mount 3V @ 250µA 96.3 nC @ 10 V 60 V ±20V 4515 pF @ 30 V - - PowerDI5060-8 (Type K) - 3.13W -55°C ~ 175°C (TJ)
DMTH62M8SPS-13

DMTH62M8SPS-13

MOSFET BVDSS: 41V-60V POWERDI506

Diodes Incorporated

7,387 -
DMTH62M8SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2.8mOhm @ 50A, 10V Surface Mount 4V @ 250µA 95.4 nC @ 10 V 60 V ±20V 4556 pF @ 30 V - - PowerDI5060-8 (Type K) - 3.2W -55°C ~ 175°C (TJ)
DMNH6011LK3-13

DMNH6011LK3-13

MOSFET N-CH 55V 80A TO252 T&R

Diodes Incorporated

4,119 -
DMNH6011LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 12mOhm @ 25A, 10V Surface Mount 2V @ 250µA 49.1 nC @ 10 V 55 V ±12V 3077 pF @ 30 V AEC-Q101 - TO-252 (DPAK) Automotive 1.6W (Ta) -55°C ~ 175°C (TJ)
NVMFS5C423NLWFT1G

NVMFS5C423NLWFT1G

MOSFET N-CH 40V 31A/150A 5DFN

onsemi

4,433 -
NVMFS5C423NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 31A (Ta), 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V Surface Mount 2V @ 250µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
IPD06P003NSAUMA1

IPD06P003NSAUMA1

MOSFET P-CH 60V 22A TO252-3

Infineon Technologies

7,810 -
IPD06P003NSAUMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 65mOhm @ 22A, 10V Surface Mount 4V @ 1.04mA 39 nC @ 10 V 60 V ±20V 1600 pF @ 30 V - - PG-TO252-3-313 - 83W (Tc) -55°C ~ 175°C (TJ)
SUP40N25-60-E3

SUP40N25-60-E3

MOSFET N-CH 250V 40A TO220AB

Vishay Siliconix

466 -
SUP40N25-60-E3

数据表

TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 6V, 10V 60mOhm @ 20A, 10V Through Hole 4V @ 250µA 140 nC @ 10 V 250 V ±30V 5000 pF @ 25 V - - TO-220AB - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ)
TK28V65W,LQ

TK28V65W,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

4,966 -
TK28V65W,LQ

数据表

- 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27.6A (Ta) 10V 120mOhm @ 13.8A, 10V Surface Mount 3.5V @ 1.6mA 75 nC @ 10 V 650 V ±30V 3000 pF @ 300 V - - 4-DFN-EP (8x8) - 240W (Tc) 150°C
NP180N055TUK-E1-AY

NP180N055TUK-E1-AY

MOSFET N-CH 55V 180A TO263-7

Renesas Electronics Corporation

2,182 -
NP180N055TUK-E1-AY

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 1.4mOhm @ 90A, 10V Surface Mount 4V @ 250µA 294 nC @ 10 V 55 V ±20V 16050 pF @ 25 V - - TO-263-7 - 1.8W (Ta), 348W (Tc) 175°C (TJ)
NTMTS0D6N04CTXG

NTMTS0D6N04CTXG

MOSFET N-CH 40V 533A

onsemi

8,417 -
NTMTS0D6N04CTXG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 533A (Tc) 10V 0.48mOhm @ 50A, 10V Surface Mount 4V @ 250µA 187 nC @ 10 V 40 V ±20V 11800 pF @ 20 V - - 8-DFNW (8.3x8.4) - 5W -55°C ~ 175°C (TJ)
SIHB21N65EF-GE3

SIHB21N65EF-GE3

MOSFET N-CH 650V 21A D2PAK

Vishay Siliconix

143 -
SIHB21N65EF-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 180mOhm @ 11A, 10V Surface Mount 4V @ 250µA 106 nC @ 10 V 650 V ±30V 2322 pF @ 100 V - - TO-263 (D2PAK) - 208W (Tc) -55°C ~ 150°C (TJ)
STW65N60DM6

STW65N60DM6

MOSFET N-CH 600V 38A TO247

STMicroelectronics

592 -
STW65N60DM6

数据表

MDmesh™ DM6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 38A (Tc) - - Through Hole - - 600 V ±25V - - - TO-247-3 - - -
IPL60R104C7AUMA1

IPL60R104C7AUMA1

MOSFET N-CH 600V 20A 4VSON

Infineon Technologies

8,897 -
IPL60R104C7AUMA1

数据表

CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 104mOhm @ 9.7A, 10V Surface Mount 4V @ 490µA 42 nC @ 10 V 600 V ±20V 1819 pF @ 400 V - - PG-VSON-4 - 122W (Tc) -40°C ~ 150°C (TJ)
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