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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STD50NH02L-1

STD50NH02L-1

MOSFET N-CH 24V 50A I-PAK

STMicroelectronics

5,652 -
STD50NH02L-1

数据表

STripFET™ III TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 5V, 10V 10.5mOhm @ 25A, 10V Through Hole 1.8V @ 250µA 24 nC @ 10 V 24 V ±20V 1400 pF @ 25 V - - TO-251 (IPAK) - 60W (Tc) -55°C ~ 175°C (TJ)
STH320N4F6-6

STH320N4F6-6

MOSFET N-CH 40V 200A H2PAK-6

STMicroelectronics

976 -
STH320N4F6-6

数据表

DeepGATE™, STripFET™ VI TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 1.3mOhm @ 80A, 10V Surface Mount 4V @ 250µA 240 nC @ 10 V 40 V ±20V 13800 pF @ 15 V AEC-Q101 - H2PAK-6 Automotive 300W (Tc) -55°C ~ 175°C (TJ)
IRFR110TRRPBF

IRFR110TRRPBF

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

8,070 -
IRFR110TRRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V Surface Mount 4V @ 250µA 8.3 nC @ 10 V 100 V ±20V 180 pF @ 25 V - - DPAK - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
PSMN2R5-40YLD/2X

PSMN2R5-40YLD/2X

PSMN2R5-40YLD/SOT669/LFPAK

Nexperia USA Inc.

5,396 -
PSMN2R5-40YLD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V Surface Mount 2.05V @ 1mA 78 nC @ 10 V 40 V ±20V 5583 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 147W (Tc) -55°C ~ 175°C (TJ)
PSMN2R8-40YSD/2X

PSMN2R8-40YSD/2X

PSMN2R8-40YSD/SOT669/LFPAK

Nexperia USA Inc.

8,771 -
PSMN2R8-40YSD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 2.8mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 62 nC @ 10 V 40 V ±20V 4507 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 147W (Tc) -55°C ~ 175°C (TJ)
ZXM64P02XTC

ZXM64P02XTC

MOSFET P-CH 20V 3.5A 8MSOP

Diodes Incorporated

9,665 -
ZXM64P02XTC

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 2.7V, 4.5V 90mOhm @ 2.4A, 4.5V Surface Mount 700mV @ 250µA (Min) 6.9 nC @ 4.5 V 20 V ±12V 900 pF @ 15 V - - 8-MSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
ZXM64P03XTC

ZXM64P03XTC

MOSFET P-CH 30V 3.8A 8MSOP

Diodes Incorporated

4,012 -
ZXM64P03XTC

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.8A (Ta) 4.5V, 10V 75mOhm @ 2.4A, 10V Surface Mount 1V @ 250µA 46 nC @ 10 V 30 V ±20V 825 pF @ 25 V - - 8-MSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
R6024VNXC7G

R6024VNXC7G

600V 13A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor

1,070 -
R6024VNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V, 15V 153mOhm @ 6A, 15V Through Hole 6.5V @ 700µA 38 nC @ 10 V 600 V ±30V 1800 pF @ 100 V - - TO-220FM - 70W (Tc) 150°C (TJ)
STB35N65DM2

STB35N65DM2

MOSFET N-CH 650V 28A D2PAK

STMicroelectronics

971 -
STB35N65DM2

数据表

MDmesh™ M2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 110mOhm @ 14A, 10V Surface Mount 5V @ 250µA 54 nC @ 10 V 650 V ±25V 2400 pF @ 100 V - - D2PAK - 210W (Tc) -55°C ~ 150°C (TJ)
IXTP24N65X2

IXTP24N65X2

MOSFET N-CH 650V 24A TO220AB

Littelfuse Inc.

259 -
IXTP24N65X2

数据表

Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 145mOhm @ 12A, 10V Through Hole 5V @ 250µA 36 nC @ 10 V 650 V ±30V 2060 pF @ 25 V - - TO-220-3 - 390W (Tc) -55°C ~ 150°C (TJ)
IPL60R085P7AUMA1

IPL60R085P7AUMA1

MOSFET N-CH 600V 39A 4VSON

Infineon Technologies

238 -
IPL60R085P7AUMA1

数据表

CoolMOS™ P7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 39A (Tc) 10V 85mOhm @ 11.8A, 10V Surface Mount 4V @ 590µA 51 nC @ 10 V 600 V ±20V 2180 pF @ 400 V - - PG-VSON-4 - 154W (Tc) -40°C ~ 150°C (TJ)
STB9NK90Z

STB9NK90Z

MOSFET N-CH 900V 8A D2PAK

STMicroelectronics

680 -
STB9NK90Z

数据表

SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.3Ohm @ 3.6A, 10V Surface Mount 4.5V @ 100µA 72 nC @ 10 V 900 V ±30V 2115 pF @ 25 V - - D2PAK - 160W (Tc) -55°C ~ 150°C (TJ)
IXTP86N20T

IXTP86N20T

MOSFET N-CH 200V 86A TO220AB

Littelfuse Inc.

346 -
IXTP86N20T

数据表

Trench TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 86A (Tc) 10V 29mOhm @ 500mA, 10V Through Hole 5V @ 1mA 90 nC @ 10 V 200 V ±30V 4500 pF @ 25 V - - TO-220-3 - 480W (Tc) -55°C ~ 175°C (TJ)
MCP18N20A-BP

MCP18N20A-BP

MOSFET

Micro Commercial Co

5,065 -
MCP18N20A-BP

数据表

- TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 150mOhm @ 9A, 10V Through Hole 4V @ 250µA 56 nC @ 10 V 200 V ±20V 877 pF @ 25 V - - TO-220AB (H) - 179W (Tj) -55°C ~ 150°C (TJ)
IRFR2905ZTRRPBF

IRFR2905ZTRRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

3,289 -
IRFR2905ZTRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 14.5mOhm @ 36A, 10V Surface Mount 4V @ 250µA 44 nC @ 10 V 55 V ±20V 1380 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C430NLWFT3G

NVMFS5C430NLWFT3G

MOSFET N-CH 40V 200A 5DFN

onsemi

7,252 -
NVMFS5C430NLWFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200A (Tc) 4.5V, 10V 1.5mOhm @ 50A, 10V Surface Mount 2V @ 250µA 70 nC @ 10 V 40 V ±20V 4300 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ)
IRF6215L-103

IRF6215L-103

MOSFET P-CH 150V 13A TO262

Infineon Technologies

8,395 -
IRF6215L-103

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 290mOhm @ 6.6A, 10V Through Hole 4V @ 250µA 66 nC @ 10 V 150 V ±20V 860 pF @ 25 V - - TO-262 - 3.8W (Ta), 110W (Tc) -
DMT8008LFG-13

DMT8008LFG-13

MOSFET BVDSS: 61V~100V POWERDI33

Diodes Incorporated

2,219 -
DMT8008LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 48A (Tc) 4.5V, 10V 6.9mOhm @ 20A, 10V Surface Mount 2.5V @ 1mA 37.7 nC @ 10 V 80 V ±20V 2254 pF @ 40 V - - POWERDI3333-8 - 1W (Ta), 23.5W (Tc) -55°C ~ 150°C (TJ)
FQB2N80TM

FQB2N80TM

MOSFET N-CH 800V 2.4A D2PAK

onsemi

7,909 -
FQB2N80TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 6.3Ohm @ 900mA, 10V Surface Mount 5V @ 250µA 15 nC @ 10 V 800 V ±30V 550 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 85W (Tc) -55°C ~ 150°C (TJ)
AONR66820

AONR66820

N

Alpha & Omega Semiconductor Inc.

6,889 -
AONR66820

数据表

AlphaSGT2™ 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 50A (Tc) 8V, 10V 8.8mOhm @ 17A, 8V Surface Mount 4.1V @ 250µA 50 nC @ 10 V 80 V ±20V 1950 pF @ 40 V - - 8-DFN-EP (3.3x3.3) - 4.1W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
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