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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TK65S04N1L,LQ

TK65S04N1L,LQ

MOSFET N-CH 40V 65A DPAK

Toshiba Semiconductor and Storage

3,964 -
TK65S04N1L,LQ

数据表

U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Ta) 10V 4.3mOhm @ 32.5A, 10V Surface Mount 2.5V @ 300µA 39 nC @ 10 V 40 V ±20V 2550 pF @ 10 V - - DPAK+ - 107W (Tc) 175°C (TJ)
IPD038N06N3GATMA1

IPD038N06N3GATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

2,376 -
IPD038N06N3GATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 3.8mOhm @ 90A, 10V Surface Mount 4V @ 90µA 98 nC @ 10 V 60 V ±20V 8000 pF @ 30 V - - PG-TO252-3 - 188W (Tc) -55°C ~ 175°C (TJ)
IPA60R380E6XKSA1

IPA60R380E6XKSA1

MOSFET N-CH 600V 10.6A TO220-FP

Infineon Technologies

150 -
IPA60R380E6XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V Through Hole 3.5V @ 320µA 32 nC @ 10 V 600 V ±20V 700 pF @ 100 V - - PG-TO220-FP - 31W (Tc) -55°C ~ 150°C (TJ)
RD3G600GNTL

RD3G600GNTL

MOSFET N-CH 40V 60A TO252

Rohm Semiconductor

2,427 -
RD3G600GNTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 3.6mOhm @ 60A, 10V Surface Mount 2.5V @ 1mA 46.5 nC @ 10 V 40 V ±20V 3400 pF @ 20 V - - TO-252 - 40W (Tc) 150°C (TJ)
PJMF280N65E1_T0_00001

PJMF280N65E1_T0_00001

650V SUPER JUNCITON MOSFET

Panjit International Inc.

1,998 -
PJMF280N65E1_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 650 V ±30V 1040 pF @ 400 V - - ITO-220AB-F - 35.7W (Tc) -55°C ~ 150°C (TJ)
STB120N4F6

STB120N4F6

MOSFET N-CH 40V 80A D2PAK

STMicroelectronics

744 -
STB120N4F6

数据表

DeepGATE™, STripFET™ VI TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 4mOhm @ 40A, 10V Surface Mount 4V @ 250µA 65 nC @ 10 V 40 V ±20V 3850 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 110W (Tc) -55°C ~ 175°C (TJ)
IRF9Z30PBF-BE3

IRF9Z30PBF-BE3

MOSFET P-CH 50V 18A TO220AB

Vishay Siliconix

8,011 -
IRF9Z30PBF-BE3

数据表

- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 140mOhm @ 9.3A, 10V Through Hole 4V @ 250µA 39 nC @ 10 V 50 V ±20V 900 pF @ 25 V - - TO-220AB - 74W (Tc) -55°C ~ 150°C (TJ)
SIRA54ADP-T1-RE3

SIRA54ADP-T1-RE3

N-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix

6,000 -
SIRA54ADP-T1-RE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36.2A (Ta), 128A (Tc) 4.5V, 10V 2.2mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 70 nC @ 10 V 40 V +20V, -16V 3850 pF @ 20 V - - PowerPAK® SO-8 - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ)
SIJA54ADP-T1-GE3

SIJA54ADP-T1-GE3

N-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix

5,923 -
SIJA54ADP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35.4A (Ta), 126A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 70 nC @ 10 V 40 V +20V, -16V 3850 pF @ 20 V - - PowerPAK® SO-8 - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ)
PSMN1R0-25YLDX

PSMN1R0-25YLDX

MOSFET N-CH 25V 100A LFPAK56

Nexperia USA Inc.

5,901 -
PSMN1R0-25YLDX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 0.89mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 71.8 nC @ 10 V 25 V ±20V 5308 pF @ 12 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 160W (Tc) -55°C ~ 175°C (TJ)
IRF9Z24PBF-BE3

IRF9Z24PBF-BE3

MOSFET P-CH 60V 11A TO220AB

Vishay Siliconix

891 -
IRF9Z24PBF-BE3

数据表

- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 11A (Tc) - 280mOhm @ 6.6A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 60 V ±20V 570 pF @ 25 V - - TO-220AB - 60W (Tc) -55°C ~ 175°C (TJ)
DMG4406LSS-13

DMG4406LSS-13

MOSFET N CH 30V 10.3A 8-SO

Diodes Incorporated

2,334 -
DMG4406LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.3A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V Surface Mount 2V @ 250µA 26.7 nC @ 10 V 30 V ±20V 1281 pF @ 15 V - - 8-SO - 1.5W (Ta) -55°C ~ 150°C (TJ)
AON7436

AON7436

MOSFET N-CH 20V 9A/23A 8DFN

Alpha & Omega Semiconductor Inc.

9,865 -
AON7436

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta), 23A (Tc) 1.8V, 10V 19mOhm @ 9A, 10V Surface Mount 1.1V @ 250µA 15 nC @ 10 V 20 V ±12V 630 pF @ 10 V - - 8-DFN-EP (3x3) - 3.1W (Ta), 16.7W (Tc) -55°C ~ 150°C (TJ)
SI1011X-T1-GE3

SI1011X-T1-GE3

MOSFET P-CH 12V SC89-3

Vishay Siliconix

8,324 -
SI1011X-T1-GE3

数据表

TrenchFET® SC-89, SOT-490 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 480mA (Ta) 1.2V, 4.5V 640mOhm @ 400mA, 4.5V Surface Mount 800mV @ 250µA 4 nC @ 4.5 V 12 V ±5V 62 pF @ 6 V - - SC-89-3 - 190mW (Ta) -55°C ~ 150°C (TJ)
PMF250XN,115

PMF250XN,115

MOSFET N-CH 30V 900MA SOT323-3

NXP USA Inc.

2,027 -
PMF250XN,115

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 900mA (Ta) 2.5V, 4.5V 300mOhm @ 900mA, 4.5V Surface Mount 1.5V @ 250µA 1.1 nC @ 4.5 V 30 V ±12V 50 pF @ 15 V - - SC-70 - 275mW (Ta), 1.065W (Tc) -55°C ~ 150°C (TJ)
SSM3K301T(TE85L,F)

SSM3K301T(TE85L,F)

MOSFET N-CH 20V 3.5A TSM

Toshiba Semiconductor and Storage

7,160 -
SSM3K301T(TE85L,F)

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 1.8V, 4V 56mOhm @ 2A, 4V Surface Mount - 4.8 nC @ 4 V 20 V ±12V 320 pF @ 10 V - - TSM - 700mW (Ta) 150°C (TJ)
SSM3K302T(TE85L,F)

SSM3K302T(TE85L,F)

MOSFET N-CH 30V 3A TSM

Toshiba Semiconductor and Storage

3,723 -
SSM3K302T(TE85L,F)

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 1.8V, 4V 71mOhm @ 2A, 4V Surface Mount - 4.3 nC @ 4 V 30 V ±12V 270 pF @ 10 V - - TSM - 700mW (Ta) 150°C (TJ)
SSM3K309T(TE85L,F)

SSM3K309T(TE85L,F)

MOSFET N-CH 20V 4.7A TSM

Toshiba Semiconductor and Storage

3,135 -
SSM3K309T(TE85L,F)

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.7A (Ta) 1.8V, 4V 31mOhm @ 4A, 4V Surface Mount - - 20 V ±12V 1020 pF @ 10 V - - TSM - 700mW (Ta) 150°C (TJ)
SSM3K310T(TE85L,F)

SSM3K310T(TE85L,F)

MOSFET N-CH 20V 5A TSM

Toshiba Semiconductor and Storage

2,507 -
SSM3K310T(TE85L,F)

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 1.5V, 4V 28mOhm @ 4A, 4V Surface Mount - 14.8 nC @ 4 V 20 V ±10V 1120 pF @ 10 V - - TSM - 700mW (Ta) 150°C (TJ)
SI1489EDH-T1-GE3

SI1489EDH-T1-GE3

MOSFET P-CH 8V 2A SOT-363

Vishay Siliconix

9,128 -
SI1489EDH-T1-GE3

数据表

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2A (Tc) 1.2V, 4.5V 48mOhm @ 3A, 4.5V Surface Mount 700mV @ 250µA 16 nC @ 4.5 V 8 V ±5V - - - SC-70-6 - 2.8W (Tc) -55°C ~ 150°C (TJ)
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