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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
FD6M033N06

FD6M033N06

MOSFET 2N-CH 60V 73A EPM15

Fairchild Semiconductor

1,382 -
FD6M033N06

数据表

Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 73A 3.3mOhm @ 40A, 10V 4V @ 250µA 129nC @ 10V - 6010pF @ 25V - EPM15 -40°C ~ 150°C (TJ) Through Hole - -
FD6M045N06

FD6M045N06

MOSFET 2N-CH 60V 60A EPM15

Fairchild Semiconductor

1,409 -
FD6M045N06

数据表

Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 60A 4.5mOhm @ 40A, 10V 4V @ 250µA 87nC @ 10V - 3890pF @ 25V - EPM15 -40°C ~ 150°C (TJ) Through Hole - -
FD6M043N08

FD6M043N08

MOSFET 2N-CH 75V 65A EPM15

Fairchild Semiconductor

1,404 -
FD6M043N08

数据表

Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 75V 65A 4.3mOhm @ 40A, 10V 4V @ 250µA 148nC @ 10V - 6180pF @ 25V - EPM15 -40°C ~ 150°C (TJ) Through Hole - -
FDZ1827NZ

FDZ1827NZ

MOSFET 2N-CH 20V 10A 6WLCSP

Fairchild Semiconductor

20,000 -
FDZ1827NZ

数据表

PowerTrench® 6-XFBGA, WLCSP Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain 20V 10A (Ta) 13mOhm @ 1A, 4.5V 1.2V @ 250µA 24nC @ 10V - 2055pF @ 10V 2W (Ta) 6-WLCSP (1.3x2.3) -55°C ~ 150°C (TJ) Surface Mount - -
FDC6304P

FDC6304P

MOSFET 2P-CH 25V 0.46A SSOT6

Fairchild Semiconductor

76,939 -
FDC6304P

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) 25V 460mA 1.1Ohm @ 500mA, 4.5V 1.5V @ 250µA 1.5nC @ 4.5V Logic Level Gate 62pF @ 10V 700mW SuperSOT™-6 -55°C ~ 150°C (TJ) Surface Mount - -
FDMA1025P

FDMA1025P

MOSFET 2P-CH 20V 3.1A 6MICROFET

Fairchild Semiconductor

27,000 -
FDMA1025P

数据表

PowerTrench® 6-VDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 3.1A 155mOhm @ 3.1A, 4.5V 1.5V @ 250µA 4.8nC @ 4.5V Logic Level Gate 450pF @ 10V 700mW 6-MicroFET (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
FDPC1002S

FDPC1002S

MOSFET 2N-CH 25V 13A PWRCLIP-33

Fairchild Semiconductor

9,000 -
FDPC1002S

数据表

PowerTrench® 8-PowerWDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 25V 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc) 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V 2.2V @ 250µA, 2.2V @ 1mA 19nC @ 10V, 64nC @ 10V - 1240pF @13V, 4335pF @ 13V 1.6W (Ta), 2W (Ta) Powerclip-33 -55°C ~ 150°C Surface Mount - -
FDMC6890NZ

FDMC6890NZ

MOSFET 2N-CH 20V 4A MICROFET 3X3

Fairchild Semiconductor

7,299 -
FDMC6890NZ

数据表

PowerTrench® 6-WDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 4A 68mOhm @ 4A, 4.5V 2V @ 250µA 3.4nC @ 4.5V Logic Level Gate 270pF @ 10V 1.92W, 1.78W MicroFET 3x3mm -55°C ~ 150°C (TJ) Surface Mount - -
FDS6986AS

FDS6986AS

MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

Fairchild Semiconductor

3,700 -
FDS6986AS

数据表

PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 6.5A, 7.9A 29mOhm @ 6.5A, 10V 3V @ 250µA 17nC @ 10V Logic Level Gate 720pF @ 10V 900mW 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
FDMC8200

FDMC8200

MOSFET N-CH

Fairchild Semiconductor

69,000 -
FDMC8200

数据表

* - Bulk Active - - - - - - - - - - - - - - -
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