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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
PMDPB28UN,115

PMDPB28UN,115

MOSFET 2N-CH 20V 4.6A 6HUSON

NXP USA Inc.

9,645 -
PMDPB28UN,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 4.6A 37mOhm @ 4.6A, 4.5V 1V @ 250µA 4.7nC @ 4.5V Logic Level Gate 265pF @ 10V 510mW 6-HUSON (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
PMCXB1000UEZ

PMCXB1000UEZ

MOSFET 30V

NXP Semiconductors

195,000 -
PMCXB1000UEZ

数据表

* - Bulk Active - - - - - - - - - - - - - - -
PHP225,118

PHP225,118

NEXPERIA PHP225 - SMALL SIGNAL F

NXP Semiconductors

4,434 -
PHP225,118

数据表

* - Bulk Active - - - - - - - - - - - - - - -
PHN203,518

PHN203,518

MOSFET 2N-CH 30V 6.3A 8SO

NXP Semiconductors

2,200 -
PHN203,518

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel 30V 6.3A (Ta) 30mOhm @ 7A, 10V 2V @ 1mA 14.6nC @ 10V Logic Level Gate 560pF @ 20V 2W (Ta) 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
PMWD19UN,518

PMWD19UN,518

MOSFET 2N-CH 30V 5.6A 8TSSOP

NXP USA Inc.

5,295 -
PMWD19UN,518

数据表

TrenchMOS™ 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 5.6A 23mOhm @ 3.5A, 4.5V 700mV @ 1mA 28nC @ 5V Logic Level Gate 1478pF @ 10V 2.3W 8-TSSOP -55°C ~ 150°C (TJ) Surface Mount - -
PMWD30UN,518

PMWD30UN,518

MOSFET 2N-CH 30V 5A 8TSSOP

NXP USA Inc.

8,233 -
PMWD30UN,518

数据表

TrenchMOS™ 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 5A 33mOhm @ 3.5A, 4.5V 700mV @ 1mA 28nC @ 5V Logic Level Gate 1478pF @ 10V 2.3W 8-TSSOP -55°C ~ 150°C (TJ) Surface Mount - -
PMGD8000LN,115

PMGD8000LN,115

MOSFET 2N-CH 30V 0.125A 6TSSOP

NXP USA Inc.

2,761 -
PMGD8000LN,115

数据表

TrenchMOS™ 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 125mA 8Ohm @ 10mA, 4V 1.5V @ 100µA 0.35nC @ 4.5V Logic Level Gate 18.5pF @ 5V 200mW 6-TSSOP -55°C ~ 150°C (TJ) Surface Mount - -
PMGD400UN,115

PMGD400UN,115

MOSFET 2N-CH 30V 0.71A 6TSSOP

NXP USA Inc.

3,299 -
PMGD400UN,115

数据表

TrenchMOS™ 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 710mA 480mOhm @ 200mA, 4.5V 1V @ 250µA 0.89nC @ 4.5V Logic Level Gate 43pF @ 25V 410mW 6-TSSOP -55°C ~ 150°C (TJ) Surface Mount - -
PMDPB65UP,115

PMDPB65UP,115

MOSFET 2P-CH 20V 3.5A 6HUSON

NXP USA Inc.

5,008 -
PMDPB65UP,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 3.5A 70mOhm @ 1A, 4.5V 1V @ 250µA 6nC @ 4.5V Logic Level Gate 380pF @ 10V 520mW 6-HUSON (2x2) 150°C (TJ) Surface Mount - -
PMWD16UN,518

PMWD16UN,518

MOSFET 2N-CH 20V 9.9A 8TSSOP

NXP USA Inc.

5,896 -
PMWD16UN,518

数据表

TrenchMOS™ 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 9.9A 19mOhm @ 3.5A, 4.5V 700mV @ 1mA 23.6nC @ 4.5V Logic Level Gate 1366pF @ 16V 3.1W 8-TSSOP -55°C ~ 150°C (TJ) Surface Mount - -
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