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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
PMDPB95XNE,115

PMDPB95XNE,115

MOSFET 2N-CH 30V 2.4A 6HUSON

NXP USA Inc.

9,491 -
PMDPB95XNE,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 2.4A 120mOhm @ 2A, 4.5V 1.5V @ 250µA 2.5nC @ 4.5V Logic Level Gate 143pF @ 15V 475mW 6-HUSON (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
PMCXB900UEZ

PMCXB900UEZ

MOSFET N/P-CH 20V 0.6A 6DFN

NXP Semiconductors

1,679,901 -
PMCXB900UEZ

数据表

TrenchFET® 6-XFDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) N and P-Channel Complementary 20V 600mA, 500mA 620mOhm @ 600mA, 4.5V 950mV @ 250µA 0.7nC @ 4.5V Logic Level Gate 21.3pF @ 10V 265mW DFN1010B-6 -55°C ~ 150°C (TJ) Surface Mount - -
PMDXB1200UPEZ

PMDXB1200UPEZ

MOSFET 30V

NXP Semiconductors

1,046,148 -
PMDXB1200UPEZ

数据表

* - Bulk Active - - - - - - - - - - - - - - -
PMDPB95XNE2X

PMDPB95XNE2X

MOSFET 2N-CH 30V 2.7A 6HUSON

NXP Semiconductors

360,000 -
PMDPB95XNE2X

数据表

- 6-UDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel 30V 2.7A (Ta) 99mOhm @ 2.8A, 4.5V 1.25V @ 250µA 4.5nC @ 4.5V - 258pF @ 15V 510mW (Ta), 8.33W (Tc) 6-HUSON (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
PMDPB70EN,115

PMDPB70EN,115

MOSFET 2N-CH 30V 3.5A 6HUSON

NXP USA Inc.

30,000 -
PMDPB70EN,115

数据表

- 6-UFDFN Exposed Pad Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 3.5A 57mOhm @ 3.5A, 10V 2.5V @ 250µA 4.5nC @ 10V Logic Level Gate 130pF @ 15V 510mW 6-HUSON (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
PMDPB42UN,115

PMDPB42UN,115

MOSFET 2N-CH 20V 3.9A 6HUSON

NXP USA Inc.

8,710 -
PMDPB42UN,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 3.9A 50mOhm @ 3.9A, 4.5V 1V @ 250µA 3.5nC @ 4.5V Logic Level Gate 185pF @ 10V 510mW 6-HUSON (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
PMDPB56XN,115

PMDPB56XN,115

MOSFET 2N-CH 30V 3.1A 6HUSON

NXP USA Inc.

3,621 -
PMDPB56XN,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 3.1A 73mOhm @ 3.1A, 4.5V 1.5V @ 250µA 2.9nC @ 4.5V Logic Level Gate 170pF @ 15V 510mW 6-HUSON (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
PHC21025,118

PHC21025,118

MOSFET N/P-CH 30V SOT96-1

NXP USA Inc.

15,846 -
PHC21025,118

数据表

* - Bulk Active - - - - - - - - - - - - - - -
2N7002PS/ZLX

2N7002PS/ZLX

MOSFET 2N-CH 60V 0.32A 6TSSOP

NXP Semiconductors

35,607 -
2N7002PS/ZLX

数据表

- 6-TSSOP, SC-88, SOT-363 Bulk Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 320mA 1.6Ohm @ 500mA, 10V 2.4V @ 250µA 0.8nC @ 4.5V Logic Level Gate 50pF @ 10V - 6-TSSOP 150°C (TJ) Surface Mount - -
PMDPB38UNE,115

PMDPB38UNE,115

MOSFET 2N-CH 20V 4A 6HUSON

NXP USA Inc.

6,770 -
PMDPB38UNE,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 4A 46mOhm @ 3A, 4.5V 1V @ 250µA 4.4nC @ 4.5V Logic Level Gate 268pF @ 10V 510mW 6-HUSON (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
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