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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
MSCSM170AM039CD3AG

MSCSM170AM039CD3AG

MOSFET 2N-CH 1700V 523A

Microchip Technology

2 -
MSCSM170AM039CD3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V - 29700pF @ 1000V 2.4kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
APTM50H14FT3G

APTM50H14FT3G

MOSFET 4N-CH 500V 26A SP3

Microchip Technology

13 -
APTM50H14FT3G

数据表

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) 500V 26A 168mOhm @ 13A, 10V 5V @ 1mA 72nC @ 10V - 3259pF @ 25V 208W SP3 -40°C ~ 150°C (TJ) Chassis Mount - -
APTC60DSKM24T3G

APTC60DSKM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology

7 -
APTC60DSKM24T3G

数据表

CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V - 14400pF @ 25V 462W SP3 -40°C ~ 150°C (TJ) Chassis Mount - -
APTM50HM65FT3G

APTM50HM65FT3G

MOSFET 4N-CH 500V 51A SP3

Microchip Technology

8 -
APTM50HM65FT3G

数据表

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) 500V 51A 78mOhm @ 25.5A, 10V 5V @ 2.5mA 140nC @ 10V - 7000pF @ 25V 390W SP3 -40°C ~ 150°C (TJ) Chassis Mount - -
APTM50AM38STG

APTM50AM38STG

MOSFET 2N-CH 500V 90A SP4

Microchip Technology

6 -
APTM50AM38STG

数据表

- SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) 500V 90A 45mOhm @ 45A, 10V 5V @ 5mA 246nC @ 10V - 11200pF @ 25V 694W SP4 -40°C ~ 150°C (TJ) Chassis Mount - -
MSCSM70TLM19C3AG

MSCSM70TLM19C3AG

MOSFET 4N-CH 700V 124A SP3F

Microchip Technology

5 -
MSCSM70TLM19C3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V - 4500pF @ 700V 365W (Tc) SP3F -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM70VR1M10CT3AG

MSCSM70VR1M10CT3AG

MOSFET 2N-CH 700V 241A

Microchip Technology

4 -
MSCSM70VR1M10CT3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V - 9000pF @ 700V 690W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
MSCM20XM10T3XG

MSCM20XM10T3XG

MOSFET 6N-CH 200V 108A SP3X

Microchip Technology

9 -
MSCM20XM10T3XG

数据表

- Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) 200V 108A (Tc) 9.7mOhm @ 81A, 10V 5V @ 250µA 161nC @ 10V - 10700pF @ 50V 341W (Tc) SP3X -40°C ~ 125°C (Tc) Chassis Mount - -
MSCSM120HM31CT3AG

MSCSM120HM31CT3AG

MOSFET 4N-CH 1200V 89A SP3F

Microchip Technology

3 -
MSCSM120HM31CT3AG

数据表

- Module Tube Active Silicon Carbide (SiC) 4 N-Channel 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V - 3020pF @ 1000V 395W (Tc) SP3F -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM70AM07CT3AG

MSCSM70AM07CT3AG

MOSFET 2N-CH 700V 353A SP3F

Microchip Technology

3 -
MSCSM70AM07CT3AG

数据表

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 700V 353A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V - 13500pF @ 700V 988W (Tc) SP3F -40°C ~ 175°C (TJ) Chassis Mount - -
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