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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
MSCSM120DUM11T3AG

MSCSM120DUM11T3AG

MOSFET 2N-CH 1200V 254A SP3F

Microchip Technology

3 -
MSCSM120DUM11T3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V - 9060pF @ 1000V 1067W (Tc) SP3F -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM170HM45CT3AG

MSCSM170HM45CT3AG

MOSFET 4N-CH 1700V 64A

Microchip Technology

3 -
MSCSM170HM45CT3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V - 3300pF @ 1000V 319W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM170DUM11T3AG

MSCSM170DUM11T3AG

MOSFET 2N-CH 1700V 240A SP3F

Microchip Technology

5 -
MSCSM170DUM11T3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V - 13200pF @ 1000V 1140W (Tc) SP3F -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM120TAM31CT3AG

MSCSM120TAM31CT3AG

MOSFET 6N-CH 1200V 89A SP3F

Microchip Technology

3 -
MSCSM120TAM31CT3AG

数据表

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V - 3020pF @ 1000V 395W (Tc) SP3F -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM120DUM08T3AG

MSCSM120DUM08T3AG

MOSFET 2N-CH 1200V 337A SP3F

Microchip Technology

3 -
MSCSM120DUM08T3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 4mA 928nC @ 20V - 12100pF @ 1000V 1409W (Tc) SP3F -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM170TLM23C3AG

MSCSM170TLM23C3AG

MOSFET 4N-CH 1700V 124A SP3F

Microchip Technology

6 -
MSCSM170TLM23C3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V - 6600pF @ 1000V 602W (Tc) SP3F -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM170TAM45CT3AG

MSCSM170TAM45CT3AG

MOSFET 6N-CH 1700V 64A

Microchip Technology

16 -
MSCSM170TAM45CT3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V - 3300pF @ 1000V 319W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM170AM15CT3AG

MSCSM170AM15CT3AG

MOSFET 2N-CH 1700V 181A

Microchip Technology

16 -
MSCSM170AM15CT3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1700V (1.7kV) 181A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V - 9900pF @ 1000V 862W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM120AM08CT3AG

MSCSM120AM08CT3AG

MOSFET 2N-CH 1200V 337A SP3F

Microchip Technology

2 -
MSCSM120AM08CT3AG

数据表

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 4mA 928nC @ 20V - 12.08pF @ 1000V 1.409kW (Tc) SP3F -40°C ~ 175°C (TJ) Chassis Mount - -
MSCSM70DUM025AG

MSCSM70DUM025AG

MOSFET 2N-CH 700V 689A

Microchip Technology

5 -
MSCSM70DUM025AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V - 27000pF @ 700V 1882W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
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