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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTM50AM24SGMOSFET 2N-CH 500V 150A SP6 Microchip Technology |
16 | - |
|
数据表 |
- | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 500V | 150A | 28mOhm @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | - | 19600pF @ 25V | 1250W | SP6 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
APTM20AM04FGMOSFET 2N-CH 200V 372A SP6 Microchip Technology |
7 | - |
|
数据表 |
- | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 200V | 372A | 5mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | - | 28900pF @ 25V | 1250W | SP6 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
MSCSM170AM058CD3AGMOSFET 2N-CH 1700V 353A Microchip Technology |
8 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 1700V (1.7kV) | 353A (Tc) | 7.5mOhm @ 180A, 20V | 3.3V @ 15mA | 1068nC @ 20V | - | 19800pF @ 1000V | 1.642kW (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
MSCSM170HM23CT3AGMOSFET 4N-CH 1700V 124A Microchip Technology |
2 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1700V (1.7kV) | 124A (Tc) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | - | 6600pF @ 1000V | 602W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
MSCSM170AM029CT6LIAGMOSFET 2N-CH 1700V 676A Microchip Technology |
8 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 1700V (1.7kV) | 676A (Tc) | 3.75mOhm @ 360A, 20V | 3.3V @ 30mA | 2136nC @ 20V | - | 39600pF @ 1000V | 3kW (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
MSCSM70AM19T1AGMOSFET 2N-CH 700V 124A Microchip Technology |
21 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | - | 4500pF @ 700V | 365W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
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MSCSM120AM31CT1AGMOSFET 2N-CH 1200V 89A SP1F Microchip Technology |
7 | - |
|
数据表 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | - | 3020pF @ 1000V | 395W (Tc) | SP1F | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
MSCSM70TLM44C3AGMOSFET 4N-CH 700V 58A SP3F Microchip Technology |
7 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | 700V | 58A (Tc) | 44mOhm @ 30A, 20V | 2.7V @ 2mA | 99nC @ 20V | - | 2010pF @ 700V | 176W (Tc) | SP3F | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
MSCSM170AM45CT1AGMOSFET 2N-CH 1700V 64A Microchip Technology |
6 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | 1700V (1.7kV) | 64A (Tc) | 45mOhm @ 30A, 20V | 3.2V @ 2.5mA | 178nC @ 20V | - | 3300pF @ 1000V | 319W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
MSCSM120TLM50C3AGMOSFET 4N-CH 1200V 55A SP3F Microchip Technology |
5 | - |
|
数据表 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | - | 1990pF @ 1000V | 245W (Tc) | SP3F | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
