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桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装
KBU6B-E4/51

KBU6B-E4/51

BRIDGE RECT 1PHASE 100V 6A KBU

Vishay General Semiconductor - Diodes Division

173 -
KBU6B-E4/51

数据表

- 4-SIP, KBU Bulk Active Single Phase Standard 6 A 1 V @ 6 A 5 µA @ 100 V -50°C ~ 150°C (TJ) - 100 V - Through Hole KBU
GBPC12005-E4/51

GBPC12005-E4/51

BRIDGE RECT 1P 50V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

186 -
GBPC12005-E4/51

数据表

- 4-Square, GBPC-W Box Active Single Phase Standard 12 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - 50 V - Through Hole GBPC-W
GBPC1501-E4/51

GBPC1501-E4/51

BRIDGE RECT 1PHASE 100V 15A GBPC

Vishay General Semiconductor - Diodes Division

175 -
GBPC1501-E4/51

数据表

- 4-Square, GBPC Bulk Active Single Phase Standard 15 A 1.1 V @ 7.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - 100 V - QC Terminal GBPC
GBPC1510-E4/51

GBPC1510-E4/51

BRIDGE RECT 1PHASE 1KV 15A GBPC

Vishay General Semiconductor - Diodes Division

171 -
GBPC1510-E4/51

数据表

- 4-Square, GBPC Bulk Active Single Phase Standard 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - QC Terminal GBPC
GBPC1210-E4/51

GBPC1210-E4/51

BRIDGE RECT 1PHASE 1KV 12A GBPC

Vishay General Semiconductor - Diodes Division

116 -
GBPC1210-E4/51

数据表

- 4-Square, GBPC Box Active Single Phase Standard 12 A 1.1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - QC Terminal GBPC
GBPC3502W-E4/51

GBPC3502W-E4/51

BRIDGE RECT 1P 200V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

137 -
GBPC3502W-E4/51

数据表

- 4-Square, GBPC-W Box Active Single Phase Standard 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBPC-W
LVB1560-M3/45

LVB1560-M3/45

BRIDGE RECT 1P 600V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division

748 -
LVB1560-M3/45

数据表

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 15 A 900 mV @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GSIB-5S
VS-70MT160KPBF

VS-70MT160KPBF

BRIDGE RECT 3P 1.6KV 70A MT-K

Vishay General Semiconductor - Diodes Division

31 -
VS-70MT160KPBF

数据表

- MT-K Module Tray Active Three Phase Standard 70 A - - -40°C ~ 150°C (TJ) - 1.6 kV - Chassis Mount MT-K
B40C1000G-E4/51

B40C1000G-E4/51

BRIDGE RECT 1PHASE 65V 1A WOG

Vishay General Semiconductor - Diodes Division

2,434 -
B40C1000G-E4/51

数据表

- 4-Circular, WOG Bulk Active Single Phase Standard 1 A 1 V @ 1 A 10 µA @ 65 V -40°C ~ 125°C (TJ) - 65 V - Through Hole WOG
B125C1000G-E4/51

B125C1000G-E4/51

BRIDGE RECT 1PHASE 200V 1A WOG

Vishay General Semiconductor - Diodes Division

2,688 -
B125C1000G-E4/51

数据表

- 4-Circular, WOG Bulk Active Single Phase Standard 1 A 1 V @ 1 A 10 µA @ 200 V -40°C ~ 125°C (TJ) - 200 V - Through Hole WOG
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